HN3C09FU
Abstract: No abstract text available
Text: TOSHIBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN3C09FU
HN3C09FU
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HN3C09FU
Abstract: No abstract text available
Text: TO SH IBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING
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HN3C09FU
N3C09FU
HN3C09FU
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C09FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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marking ti
Abstract: marking .TI
Text: TOSHIBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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HN3C09FU
marking ti
marking .TI
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in U S 6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage
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