MRF587
Abstract: HP8542 mrf587d
Text: MOTOROLA Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
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MRF587
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MRF587
HP8542
mrf587d
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transistor A144
Abstract: a144 transistor
Text: Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
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MRF587/D
MRF587
Collecto51
transistor A144
a144 transistor
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MRF587
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
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MRF587/D
MRF587
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MRF587
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MRF587
Abstract: CT050
Text: Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
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MRF587/D
MRF587
MRF587
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ATIC 59 C1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MRF587 . . . designed for use in high—gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
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MRF587/D
MRF587
ATIC 59 C1
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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MRF586
Abstract: F587 033 motorola MRF587
Text: MOTOROLA SEMICONDUCTOR MRF586 MRF587 TECHNICAL DATA The RF Line N P N S ILIC O N H IG H FR E Q U E N C Y T R A N S IS T O R S . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers Ideal for use in CATV, MATV, and instrumen
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MRF586
MRF587
T1111
F587
033 motorola
MRF587
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF587 The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MÄTV, and instrumentation applications. •
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MRF587
CT050
45004B
MRF587
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HP8542
Abstract: HP11590B transistor nf5 F581
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5812 The RF Line NPN Silicon RF Low Power Transistor . . . designed for high current, low power amplifiers up to 2.0 GHz. • High Current-Gain — Bandwidth Product — f t = 5.5 GHz Typ @ lc = 75 mA • Low Noise — 2.0 dB (Typ) @ 500 MHz
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F5812
MRF581
MRF5812
HP8542
HP11590B
transistor nf5
F581
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