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    HT1 NPN Search Results

    HT1 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    HT1 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking Ht1

    Abstract: HT1 npn 2SC3928A Marking HT1 sot
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3928A SOT-23-3L TRANSISTOR NPN FEATURES z Excellent hFE Linearity of DC forward current gain z small collector to emitter saturation voltage z supper mini package easy mounting


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    PDF OT-23-3L 2SC3928A OT-23-3L 100mA marking Ht1 HT1 npn 2SC3928A Marking HT1 sot

    HT1 npn

    Abstract: 2SC3928A Marking HT1 sot
    Text: 2SC3928A SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features — — — 2.80 1.60 Excellent hFE Linearity of DC forward current gain small collector to emitter saturation voltage supper mini package easy mounting Dimensions in inches and (millimeters)


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    PDF 2SC3928A OT-23-3L OT-23-3L 100mA HT1 npn 2SC3928A Marking HT1 sot

    LEXAN 121r - 21051

    Abstract: lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A
    Text: 10. Electrical Partlist Option SEC Code Location Name Spec. Unit , PC -,-,0to+95C,560mA,-, HYS64T64020HDL,PC , DT,KR,CP3,IEC320 C5,250/250V,7/3A,BLK,1830mm,-,H05VV-F


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    PDF BA31-00024A BA39-00474A BA39-00493A S/80GB WLAN-802 L50000 L35mm L228mm LEXAN 121r - 21051 lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A

    SCB-1700N

    Abstract: SWRCH18A UL3302 AWG28 Ht1 SMD CODE BA81-07077A M470T2864EH3-CF7 smd ht1 C3604BD-F hdd 1.8 BA96-04113C
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 6. Material List Level Code 1 BA44-00264A 1 Assembled ADAPTOR 1 BA43-00212A 1 BATTERY 1 BA43-00220A


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    PDF BA44-00264A BA43-00212A BA43-00220A BA43-00221A BA43-00222A BA46-08356A BA46-09951A BA46-10898A BA99-14031A BA68-03029A SCB-1700N SWRCH18A UL3302 AWG28 Ht1 SMD CODE BA81-07077A M470T2864EH3-CF7 smd ht1 C3604BD-F hdd 1.8 BA96-04113C

    HT1 SOT363

    Abstract: PUMH11/HT1 PUMH11 part marking Ht1 05607
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMH11 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Nov 26 1999 Apr 13 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11


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    PDF MBD128 PUMH11 MAM342 SCA63 115002/00/04/pp8 HT1 SOT363 PUMH11/HT1 PUMH11 part marking Ht1 05607

    HT1 SOT363

    Abstract: part marking Ht1 MAM342
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMH11 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Aug 10 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11


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    PDF MBD128 PUMH11 MBK120 PUMH11 SCA60 115104/00/03/pp8 HT1 SOT363 part marking Ht1 MAM342

    samsung R540 service

    Abstract: L0613 samsung R540 service manual atheros ar5B95 JLCD501 AC82GL40 ATHEROS WLL6160-D99 DAC-09N019 4309-00 ltn156at01
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. - - This Document can not be used without Samsung's authorization. – 6. Material List Level 1 Parts Code Assembled EA Spec. Description ,-


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    PDF BA44-00242A BA62-00484B BA62-00484A BA31-00062A BA31-00062B BA96-04071A BA97-02919A BA81-04551A BA75-02201D BA81-06575A samsung R540 service L0613 samsung R540 service manual atheros ar5B95 JLCD501 AC82GL40 ATHEROS WLL6160-D99 DAC-09N019 4309-00 ltn156at01

    C-48U

    Abstract: 2N2666 JANTXV 2N5664 equivalent 2N5667S 2N5665
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 1998 INCH-POUND MIL-PRF-19500/455C 25 January 1998 SUPERSEDING MIL-S-19500/455B 19 January 1988 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING


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    PDF MIL-PRF-19500/455C MIL-S-19500/455B 2N5664, 2N5665, 2N5666, 2N5666S, 2N5667, 2N5667S C-48U 2N2666 JANTXV 2N5664 equivalent 2N5665

    2N5666U3

    Abstract: 2N5666 2N5665 JANTXV 2N5667 equivalent 2N5664 2N5666S 2N5667 2N5667S JANTXV 2N5666
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 October 2001. INCH-POUND MIL-PRF-19500/455D 31 July 2001 SUPERSEDING MIL-PRF-19500/455C 25 January 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING,


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    PDF MIL-PRF-19500/455D MIL-PRF-19500/455C 2N5664, 2N5665, 2N5666, 2N5666S, 2N5666U3, 2N5667, 2N5667S, 2N5666U3 2N5666 2N5665 JANTXV 2N5667 equivalent 2N5664 2N5666S 2N5667 2N5667S JANTXV 2N5666

    smd w70 diode

    Abstract: delta inverter hed55xxu12 A302 w9 BA41-00727A NB8M LTN121W1-L03-G BA41-00728A NH82801HBM UJ-850
    Text: Main System Location Level SEC Code Name Description Qt'y SA/SNA T7100 1.8GHz .1 0902-002196 IC-MICROPROCESSOR 1 SA T7300(2.0GHz) .1 0902-002197 IC-MICROPROCESSOR


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    PDF T7100 T7300 T7500 T7700 512X2) AU10U JACK-IEEE1394 AU30U IEEE1394 smd w70 diode delta inverter hed55xxu12 A302 w9 BA41-00727A NB8M LTN121W1-L03-G BA41-00728A NH82801HBM UJ-850

    w76l

    Abstract: 9m50
    Text: Mai nSyst em Opt i on SECCode Loc at i on Name Descr i pt i on Uni t I C0902002197 T7300 2. 0GHz CPU MI CROPROCESSOR; LF80537GG0414M, 2. 0GHz, uFCPGA, 479P, TR, PLASTI C, 1. 05V, 34W, 0t o+10 PC 0C, 4MB, Mer om T7300, FSB800, 4M I CDRAM MODULE; M470T6554,


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    PDF

    D1352

    Abstract: MA 7824 2SC3623A 2SC3623 VEBO-15V C5-M3
    Text: t — S 7 • 5 / — h ' > > ; = ] > h = 7 > ï> 7 , $ Silicon Transistors 2 S C 3 6 2 3 ,3 6 2 3 A NPN 4# St # f ô : mm O ¡t?jhpE"C'"t" o 4 .0 + 0 .2 hFE = 1000—3200 @ V ce = 5 . 0 V, Ic = 1 .0 mA O i&VCE(sa()T"t' o VCE(sat) = 0 .0 7 V TYP. V EB0


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    PDF 2SC3623 2SC3623A D1352 MA 7824 2SC3623A 2SC3623 VEBO-15V C5-M3

    Ht1 MARKING CODE

    Abstract: marking Ht1
    Text: Philips Semiconductors Preliminary specification NPN resistor-equipped double transistor PUMH11 FEATURES • Transistors with built-in bias resistors R1 and R2 typ. 10 kiJ each 6 5 4 H* R* H ‘ • No mutual interference between the transistors Wgrgi • Simplification of circuit design


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    PDF PUMH11 SC-88) Ht1 MARKING CODE marking Ht1

    HT1 SOT363

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11 FEATURES • T ransistors w ith built-in bias resistors R1 and R2 typ. 10 k£2 each • No m utual interference betw een the transistors 6 • S im plification of circu it design


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    PDF PUMH11 SC-88) SC-88 OT363 HT1 SOT363

    Untitled

    Abstract: No abstract text available
    Text: — S • S/“ K '> i n > Silicon T ran sisto r 2SC3732 NPNx >J 3 > h m. # 7 W & rn W ï : mm) o x A -y-f > ?"iS JÌ* fìl['<'o o 3 u ? ^ fâ fD ^ )Ï7bf/J'? è o o a u- 9 '''o 02SA1459 t ^ > 7 ° - C ÎÈ fflT 'ë i t o T a = 25 ° C ) il g «& ^5- f§


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    PDF 2SC3732 02SA1459 13523JJ4V0DS00 TC-5933B)

    BX46

    Abstract: T108 X108 S0532 1622AF
    Text: • vii I T Hi I JV tfC iïf/\-TÂ ^ Compound Transistor G A I L4L NPNi it U a > ì>*? w - r m m t : mm O s <4 7 * t 6# L t f t jg Ê L t > 'i-t o Ri = 47 kQ, o G N 1L 4 L R 2 = 22 k Q ) £ 3 > - 7 °'J / > 9 'J T ' f ë f f l T # ( T a = il V ? -y ^ [ [ " v l r r r ;


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    PDF PWS10 BX46 T108 X108 S0532 1622AF

    2SC2003

    Abstract: transistor 2sc2002 2SC2002 2SA953 PA33 PT600 npn transistor w5
    Text: NEC j m * = r i \ r r x y ' j 3 > h ^ X ^ Silicon T ran sisto rs A 2SC2002,2003 NPN Silicon Epitaxial Transistor Audio Frequency Am plifier ftM m / « « /F E A T U R E S PACKAGE D IM ENSIO NS Unit : mm o t — r"4 Yv4 0 2SA953, 9 5 4 ¿ 3 > 7 °iJ (, O


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    PDF 2SA953, 954tn 2SC2002 2SC2003 I-150 CycleS50 transistor 2sc2002 2SA953 PA33 PT600 npn transistor w5

    HT1 SOT363

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PUMH11 NPN resistor-equipped double transistor 1999 Apr 13 Product specification Supersedes data of 1998 Nov 26 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor


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    PDF PUMH11 PUMH11 115002/00/04/pp8 HT1 SOT363

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PUMH11 NPN resistor-equipped double transistor 1998 Aug 10 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification


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    PDF PUMH11 PUMH11 SC-88) 115104/00/02/pp8

    Transistor 2gmz

    Abstract: westinghouse relay c8 2N5921 radar distance 2N5120 allen bradley potentiometer type j ALLEN-BRADLEY POTENTIOMETER WESTINGHOUSE ELECTRIC 2N5920 WESTINGHOUSE driver
    Text: File No. 440 , RF Pow er T ran sisto rs □G Q B Æ I Solid State Division 2N5920 2-W ,2-G H z, Em itter-Ballasted Silicon N -P -N O verlay Transistor F o r U H F /M ic ro w a v e Pow er A m p lifie r s , M icrow ave F u n d a m e n ta l-F re q u e n c y O s c illa to rs and


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    PDF 2N5920 10-dB 12-dB 2N5920* O-215AA Transistor 2gmz westinghouse relay c8 2N5921 radar distance 2N5120 allen bradley potentiometer type j ALLEN-BRADLEY POTENTIOMETER WESTINGHOUSE ELECTRIC 2N5920 WESTINGHOUSE driver

    capacitor cross reference

    Abstract: E 99006
    Text: [application M l U C C 1 8 0 9 -1 /-2 IN ro • available [| U C C 2 8 0 9 -1 /-2 U C C 3 8 0 9 -1 /-2 I UNITRODE Economy Primary Side Controller FEATURES DESCRIPTION • User Programmable Soft Start With Active Low Shutdown • Operation to 1MHz The UCC3809 family of BCDMOS economy low power integrated circuits


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    PDF 100jiA UCC3809 U-165, UC3965 DN-89, UC3842, UCC3802, UDG-99006 capacitor cross reference E 99006

    Untitled

    Abstract: No abstract text available
    Text: 7 7 SGS-THOMSON k7 £ HD êœi[LIOT(S lii!lD(g§ stvssso STV5350/H - STV5350/T MONOCHIP TELETEXT AND VPS DECODER WITH 8 INTEGRATED PAGES • COMPLETE TELETEXT AND VPS DECODER INCLUDING AN 8 PAGE MEMORY ON A SIN­ GLE CHIP ■ UPWARD SOFTWARE COMPATIBLE WITH


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    PDF STV5350/H STV5350/T SAA5231, SDA5243, STV5345) 875MHz

    SFOR1A42

    Abstract: SY 356 S6370 SF0R1A42 sy 171 SG25AA60 S6111 sj 2025 DRA01B DRA01C
    Text: I r t lr t L O lß W c o eo m co cnj o O O lo lo -H -H —1CO CO LO LO LO LO LO co co eo c o co LO eo o T T T T T T T T T T T T T T T T T T T T LO LO LO LO LO c o c o c o CO CO LO LO LO LO LO c o co co co eo T T T T T T T T T T T T T T T o o o o o o o o o o


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    PDF 2-10ms SG16AA40 SG16AA60 SG25AA20 SG25AA40 SG25AA60 H-101 SFOR1A42 SY 356 S6370 SF0R1A42 sy 171 S6111 sj 2025 DRA01B DRA01C

    ic 4082

    Abstract: ic 4082 16 pins telefunken schematic diagram
    Text: Tem ic U 4082 B TELEFUNKEN Semiconductors Low-Voltage Voice Switched Circuit for Hands-free Operation in Telephone, Intercom Systems, Household, Business Use, Car Telephones etc. Description The low-voltage voice switched speakerphone circuit, U 4082 B, incorporates the wide range of functions


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    PDF D-74025 ic 4082 ic 4082 16 pins telefunken schematic diagram