marking Ht1
Abstract: HT1 npn 2SC3928A Marking HT1 sot
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3928A SOT-23-3L TRANSISTOR NPN FEATURES z Excellent hFE Linearity of DC forward current gain z small collector to emitter saturation voltage z supper mini package easy mounting
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Original
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OT-23-3L
2SC3928A
OT-23-3L
100mA
marking Ht1
HT1 npn
2SC3928A
Marking HT1 sot
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PDF
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HT1 npn
Abstract: 2SC3928A Marking HT1 sot
Text: 2SC3928A SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features 2.80 1.60 Excellent hFE Linearity of DC forward current gain small collector to emitter saturation voltage supper mini package easy mounting Dimensions in inches and (millimeters)
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Original
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2SC3928A
OT-23-3L
OT-23-3L
100mA
HT1 npn
2SC3928A
Marking HT1 sot
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PDF
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LEXAN 121r - 21051
Abstract: lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A
Text: 10. Electrical Partlist Option SEC Code Location Name Spec. Unit , PC -,-,0to+95C,560mA,-, HYS64T64020HDL,PC , DT,KR,CP3,IEC320 C5,250/250V,7/3A,BLK,1830mm,-,H05VV-F
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Original
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BA31-00024A
BA39-00474A
BA39-00493A
S/80GB
WLAN-802
L50000
L35mm
L228mm
LEXAN 121r - 21051
lexan 121r 21051
u574
Dell 90w-AC adapter
B568
B552 ffc
B591
12505hs14
BA42-00141A
BA41-00497A
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PDF
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SCB-1700N
Abstract: SWRCH18A UL3302 AWG28 Ht1 SMD CODE BA81-07077A M470T2864EH3-CF7 smd ht1 C3604BD-F hdd 1.8 BA96-04113C
Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 6. Material List Level Code 1 BA44-00264A 1 Assembled ADAPTOR 1 BA43-00212A 1 BATTERY 1 BA43-00220A
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Original
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BA44-00264A
BA43-00212A
BA43-00220A
BA43-00221A
BA43-00222A
BA46-08356A
BA46-09951A
BA46-10898A
BA99-14031A
BA68-03029A
SCB-1700N
SWRCH18A
UL3302 AWG28
Ht1 SMD CODE
BA81-07077A
M470T2864EH3-CF7
smd ht1
C3604BD-F
hdd 1.8
BA96-04113C
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PDF
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HT1 SOT363
Abstract: PUMH11/HT1 PUMH11 part marking Ht1 05607
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMH11 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Nov 26 1999 Apr 13 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11
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Original
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MBD128
PUMH11
MAM342
SCA63
115002/00/04/pp8
HT1 SOT363
PUMH11/HT1
PUMH11
part marking Ht1
05607
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PDF
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HT1 SOT363
Abstract: part marking Ht1 MAM342
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMH11 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Aug 10 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11
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Original
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MBD128
PUMH11
MBK120
PUMH11
SCA60
115104/00/03/pp8
HT1 SOT363
part marking Ht1
MAM342
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PDF
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samsung R540 service
Abstract: L0613 samsung R540 service manual atheros ar5B95 JLCD501 AC82GL40 ATHEROS WLL6160-D99 DAC-09N019 4309-00 ltn156at01
Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. - - This Document can not be used without Samsung's authorization. – 6. Material List Level 1 Parts Code Assembled EA Spec. Description ,-
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Original
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BA44-00242A
BA62-00484B
BA62-00484A
BA31-00062A
BA31-00062B
BA96-04071A
BA97-02919A
BA81-04551A
BA75-02201D
BA81-06575A
samsung R540 service
L0613
samsung R540 service manual
atheros ar5B95
JLCD501
AC82GL40
ATHEROS WLL6160-D99
DAC-09N019
4309-00
ltn156at01
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PDF
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C-48U
Abstract: 2N2666 JANTXV 2N5664 equivalent 2N5667S 2N5665
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 1998 INCH-POUND MIL-PRF-19500/455C 25 January 1998 SUPERSEDING MIL-S-19500/455B 19 January 1988 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING
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Original
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MIL-PRF-19500/455C
MIL-S-19500/455B
2N5664,
2N5665,
2N5666,
2N5666S,
2N5667,
2N5667S
C-48U
2N2666
JANTXV 2N5664 equivalent
2N5665
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PDF
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2N5666U3
Abstract: 2N5666 2N5665 JANTXV 2N5667 equivalent 2N5664 2N5666S 2N5667 2N5667S JANTXV 2N5666
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 October 2001. INCH-POUND MIL-PRF-19500/455D 31 July 2001 SUPERSEDING MIL-PRF-19500/455C 25 January 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING,
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Original
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MIL-PRF-19500/455D
MIL-PRF-19500/455C
2N5664,
2N5665,
2N5666,
2N5666S,
2N5666U3,
2N5667,
2N5667S,
2N5666U3
2N5666
2N5665
JANTXV 2N5667 equivalent
2N5664
2N5666S
2N5667
2N5667S
JANTXV 2N5666
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PDF
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smd w70 diode
Abstract: delta inverter hed55xxu12 A302 w9 BA41-00727A NB8M LTN121W1-L03-G BA41-00728A NH82801HBM UJ-850
Text: Main System Location Level SEC Code Name Description Qt'y SA/SNA T7100 1.8GHz .1 0902-002196 IC-MICROPROCESSOR 1 SA T7300(2.0GHz) .1 0902-002197 IC-MICROPROCESSOR
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Original
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T7100
T7300
T7500
T7700
512X2)
AU10U
JACK-IEEE1394
AU30U
IEEE1394
smd w70 diode
delta inverter
hed55xxu12
A302 w9
BA41-00727A
NB8M
LTN121W1-L03-G
BA41-00728A
NH82801HBM
UJ-850
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PDF
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w76l
Abstract: 9m50
Text: Mai nSyst em Opt i on SECCode Loc at i on Name Descr i pt i on Uni t I C0902002197 T7300 2. 0GHz CPU MI CROPROCESSOR; LF80537GG0414M, 2. 0GHz, uFCPGA, 479P, TR, PLASTI C, 1. 05V, 34W, 0t o+10 PC 0C, 4MB, Mer om T7300, FSB800, 4M I CDRAM MODULE; M470T6554,
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Original
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PDF
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D1352
Abstract: MA 7824 2SC3623A 2SC3623 VEBO-15V C5-M3
Text: t — S 7 • 5 / — h ' > > ; = ] > h = 7 > ï> 7 , $ Silicon Transistors 2 S C 3 6 2 3 ,3 6 2 3 A NPN 4# St # f ô : mm O ¡t?jhpE"C'"t" o 4 .0 + 0 .2 hFE = 1000—3200 @ V ce = 5 . 0 V, Ic = 1 .0 mA O i&VCE(sa()T"t' o VCE(sat) = 0 .0 7 V TYP. V EB0
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OCR Scan
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2SC3623
2SC3623A
D1352
MA 7824
2SC3623A
2SC3623
VEBO-15V
C5-M3
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PDF
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Ht1 MARKING CODE
Abstract: marking Ht1
Text: Philips Semiconductors Preliminary specification NPN resistor-equipped double transistor PUMH11 FEATURES • Transistors with built-in bias resistors R1 and R2 typ. 10 kiJ each 6 5 4 H* R* H ‘ • No mutual interference between the transistors Wgrgi • Simplification of circuit design
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OCR Scan
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PUMH11
SC-88)
Ht1 MARKING CODE
marking Ht1
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PDF
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HT1 SOT363
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11 FEATURES • T ransistors w ith built-in bias resistors R1 and R2 typ. 10 k£2 each • No m utual interference betw een the transistors 6 • S im plification of circu it design
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OCR Scan
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PUMH11
SC-88)
SC-88
OT363
HT1 SOT363
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PDF
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Untitled
Abstract: No abstract text available
Text: — S • S/“ K '> i n > Silicon T ran sisto r 2SC3732 NPNx >J 3 > h m. # 7 W & rn W ï : mm) o x A -y-f > ?"iS JÌ* fìl['<'o o 3 u ? ^ fâ fD ^ )Ï7bf/J'? è o o a u- 9 '''o 02SA1459 t ^ > 7 ° - C ÎÈ fflT 'ë i t o T a = 25 ° C ) il g «& ^5- f§
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OCR Scan
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2SC3732
02SA1459
13523JJ4V0DS00
TC-5933B)
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PDF
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BX46
Abstract: T108 X108 S0532 1622AF
Text: • vii I T Hi I JV tfC iïf/\-TÂ ^ Compound Transistor G A I L4L NPNi it U a > ì>*? w - r m m t : mm O s <4 7 * t 6# L t f t jg Ê L t > 'i-t o Ri = 47 kQ, o G N 1L 4 L R 2 = 22 k Q ) £ 3 > - 7 °'J / > 9 'J T ' f ë f f l T # ( T a = il V ? -y ^ [ [ " v l r r r ;
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OCR Scan
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PWS10
BX46
T108
X108
S0532
1622AF
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PDF
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2SC2003
Abstract: transistor 2sc2002 2SC2002 2SA953 PA33 PT600 npn transistor w5
Text: NEC j m * = r i \ r r x y ' j 3 > h ^ X ^ Silicon T ran sisto rs A 2SC2002,2003 NPN Silicon Epitaxial Transistor Audio Frequency Am plifier ftM m / « « /F E A T U R E S PACKAGE D IM ENSIO NS Unit : mm o t — r"4 Yv4 0 2SA953, 9 5 4 ¿ 3 > 7 °iJ (, O
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OCR Scan
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2SA953,
954tn
2SC2002
2SC2003
I-150
CycleS50
transistor 2sc2002
2SA953
PA33
PT600
npn transistor w5
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PDF
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HT1 SOT363
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PUMH11 NPN resistor-equipped double transistor 1999 Apr 13 Product specification Supersedes data of 1998 Nov 26 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor
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OCR Scan
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PUMH11
PUMH11
115002/00/04/pp8
HT1 SOT363
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PUMH11 NPN resistor-equipped double transistor 1998 Aug 10 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification
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OCR Scan
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PUMH11
PUMH11
SC-88)
115104/00/02/pp8
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PDF
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Transistor 2gmz
Abstract: westinghouse relay c8 2N5921 radar distance 2N5120 allen bradley potentiometer type j ALLEN-BRADLEY POTENTIOMETER WESTINGHOUSE ELECTRIC 2N5920 WESTINGHOUSE driver
Text: File No. 440 , RF Pow er T ran sisto rs □G Q B Æ I Solid State Division 2N5920 2-W ,2-G H z, Em itter-Ballasted Silicon N -P -N O verlay Transistor F o r U H F /M ic ro w a v e Pow er A m p lifie r s , M icrow ave F u n d a m e n ta l-F re q u e n c y O s c illa to rs and
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OCR Scan
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2N5920
10-dB
12-dB
2N5920*
O-215AA
Transistor 2gmz
westinghouse relay c8
2N5921
radar distance
2N5120
allen bradley potentiometer type j
ALLEN-BRADLEY POTENTIOMETER
WESTINGHOUSE ELECTRIC
2N5920
WESTINGHOUSE driver
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PDF
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capacitor cross reference
Abstract: E 99006
Text: [application M l U C C 1 8 0 9 -1 /-2 IN ro • available [| U C C 2 8 0 9 -1 /-2 U C C 3 8 0 9 -1 /-2 I UNITRODE Economy Primary Side Controller FEATURES DESCRIPTION • User Programmable Soft Start With Active Low Shutdown • Operation to 1MHz The UCC3809 family of BCDMOS economy low power integrated circuits
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OCR Scan
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100jiA
UCC3809
U-165,
UC3965
DN-89,
UC3842,
UCC3802,
UDG-99006
capacitor cross reference
E 99006
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 7 SGS-THOMSON k7 £ HD êœi[LIOT(S lii!lD(g§ stvssso STV5350/H - STV5350/T MONOCHIP TELETEXT AND VPS DECODER WITH 8 INTEGRATED PAGES • COMPLETE TELETEXT AND VPS DECODER INCLUDING AN 8 PAGE MEMORY ON A SIN GLE CHIP ■ UPWARD SOFTWARE COMPATIBLE WITH
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OCR Scan
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STV5350/H
STV5350/T
SAA5231,
SDA5243,
STV5345)
875MHz
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PDF
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SFOR1A42
Abstract: SY 356 S6370 SF0R1A42 sy 171 SG25AA60 S6111 sj 2025 DRA01B DRA01C
Text: I r t lr t L O lß W c o eo m co cnj o O O lo lo -H -H —1CO CO LO LO LO LO LO co co eo c o co LO eo o T T T T T T T T T T T T T T T T T T T T LO LO LO LO LO c o c o c o CO CO LO LO LO LO LO c o co co co eo T T T T T T T T T T T T T T T o o o o o o o o o o
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OCR Scan
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2-10ms
SG16AA40
SG16AA60
SG25AA20
SG25AA40
SG25AA60
H-101
SFOR1A42
SY 356
S6370
SF0R1A42
sy 171
S6111
sj 2025
DRA01B
DRA01C
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PDF
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ic 4082
Abstract: ic 4082 16 pins telefunken schematic diagram
Text: Tem ic U 4082 B TELEFUNKEN Semiconductors Low-Voltage Voice Switched Circuit for Hands-free Operation in Telephone, Intercom Systems, Household, Business Use, Car Telephones etc. Description The low-voltage voice switched speakerphone circuit, U 4082 B, incorporates the wide range of functions
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OCR Scan
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D-74025
ic 4082
ic 4082 16 pins
telefunken schematic diagram
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PDF
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