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    Renesas Electronics Corporation HVL147M1PRF-E

    HVL147M1 - Silicon Epitaxial Trench Pin Diode for Antenna Switching '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HVL147M1PRF-E 180,000 1
    • 1 $0.1386
    • 10 $0.1386
    • 100 $0.1303
    • 1000 $0.1178
    • 10000 $0.1178
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    HVL147M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HVL147M Renesas Technology Diodes> Switching Original PDF

    HVL147M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0100 Rev.1.00 Sep 08, 2004 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.


    Original     		HVL147M REJ03G0394-0100 Unit2607 PDF

    HVL147M

    Abstract: PUSF0002ZA-A
    Text: HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0300 Rev.3.00 Jan 20, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.


    Original     		HVL147M REJ03G0394-0300 PUSF0002ZA-A HVL147M PUSF0002ZA-A PDF

    HVL147M

    Abstract: No abstract text available
    Text: HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0200 Rev.2.00 Oct 20, 2004 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.


    Original     		HVL147M REJ03G0394-0200 te-900 Unit2607 HVL147M PDF

    Untitled

    Abstract: No abstract text available
    Text: RKP409KS Composite Pin Diode for Antenna Switching REJ03G1501-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		RKP409KS REJ03G1501-0200 MFP12) MFP12 PUSF0012ZA-A HVL147M RKP201KN REJ03G1501-0200 PDF

    Untitled

    Abstract: No abstract text available
    Text: RKP401KS Composite Pin Diode for Antenna Switching REJ03G1345-0200 Rev.2.00 Jul 03, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.5 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		RKP401KS REJ03G1345-0200 MFP12) MFP12 PUSF0012ZA-A RKP200KP HVL147M PDF

    HVL147M

    Abstract: PUSF0002ZA-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    HVL147M

    Abstract: PUSF0012ZA-A RKP408KS
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    mark M7

    Abstract: No abstract text available
    Text: RKP413KS Composite Pin Diode for Antenna Switching REJ03G1613-0100 Rev.1.00 Jan 10, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max @IF = 10 mA, f = 100 MHz)


    Original     		RKP413KS REJ03G1613-0100 MFP12) RKP413KS MFP12 PUSF0012ZA-A HVL147M mark M7 PDF

    HVL147M

    Abstract: PUSF0012ZA-A RKP201KN RKP409KS
    Text: RKP409KS Composite Pin Diode for Antenna Switching REJ03G1501-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		RKP409KS REJ03G1501-0200 MFP12) MFP12 PUSF0012ZA-A HVL147M RKP201KN REJ03G1501-0200 PUSF0012ZA-A RKP409KS PDF

    Untitled

    Abstract: No abstract text available
    Text: RKP401KS Composite Pin Diode for Antenna Switching REJ03G1345-0200 Rev.2.00 Jul 03, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.5 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		RKP401KS REJ03G1345-0200 MFP12) RKP401KS MFP12 PUSF0012ZA-A RKP200KP HVL147M PDF

    Untitled

    Abstract: No abstract text available
    Text: RKP409KS Composite Pin Diode for Antenna Switching REJ03G1501-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		RKP409KS REJ03G1501-0200 MFP12) RKP409KS MFP12 PUSF0012ZA-A HVL147M RKP201KN PDF

    HVL147M

    Abstract: PUSF0012ZA-A RKP413KS
    Text: RKP413KS Composite Pin Diode for Antenna Switching REJ03G1613-0100 Rev.1.00 Jan 10, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max @IF = 10 mA, f = 100 MHz)


    Original     		RKP413KS REJ03G1613-0100 MFP12) MFP12 PUSF0012ZA-A HVL147M REJ03G1613-0100 PUSF0012ZA-A RKP413KS PDF

    HVL147M

    Abstract: PUSF0012ZA-A RKP413KS
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    HVL147M

    Abstract: PUSF0012ZA-A RKP201KN RKP409KS
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: RKP408KS Composite Pin Diode for Antenna Switching REJ03G1500-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 2.5 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		RKP408KS REJ03G1500-0200 MFP12) RKP408KS MFP12 PUSF0012ZA-A HVL147M PDF

    marking code V6 33 surface mount diode

    Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379
    Text: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3


    Original     		ADE-508-010A ADE-508-016 ADE-508-017 HVL355B HVL358B HVL368B HVL375B HVL385B marking code V6 33 surface mount diode philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379 PDF

    Untitled

    Abstract: No abstract text available
    Text: RKP408KS Composite Pin Diode for Antenna Switching REJ03G1500-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 2.5 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		RKP408KS REJ03G1500-0200 MFP12) MFP12 PUSF0012ZA-A HVL147M REJ03G1500-0200 PDF

    Untitled

    Abstract: No abstract text available
    Text: RKP413KS Composite Pin Diode for Antenna Switching REJ03G1613-0100 Rev.1.00 Jan 10, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max @IF = 10 mA, f = 100 MHz)


    Original     		RKP413KS REJ03G1613-0100 MFP12) MFP12 PUSF0012ZA-A HVL147M REJ03G1613-0100 PDF

    HVL147M

    Abstract: PUSF0012ZA-A RKP408KS
    Text: RKP408KS Composite Pin Diode for Antenna Switching REJ03G1500-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 2.5 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		RKP408KS REJ03G1500-0200 MFP12) MFP12 PUSF0012ZA-A HVL147M REJ03G1500-0200 PUSF0012ZA-A RKP408KS PDF

    HVL147M

    Abstract: PUSF0012ZA-A RKP200KP RKP401KS
    Text: RKP401KS Composite Pin Diode for Antenna Switching REJ03G1345-0200 Rev.2.00 Jul 03, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.5 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		RKP401KS REJ03G1345-0200 MFP12) MFP12 PUSF0012ZA-A RKP200KP HVL147M PUSF0012ZA-A RKP401KS PDF