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    HWC30NC Search Results

    HWC30NC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HWC30NC Hexawave 6 W C-band power FET non-via hole chip Original PDF

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    HWC30NC

    Abstract: No abstract text available
    Text: HWC30NC C-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation 860 S ou rce 650 1 4 430 2 5 3 6 Description The HWC30NC is a medium power GaAs FET


    Original     		PDF HWC30NC HWC30NC

    Untitled

    Abstract: No abstract text available
    Text: HWC30NC 123456789ABC7DEF7 952 47 9B71 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation 860 S ou rce 650 1 4 430 2 5 3 6 Description The HWC30NC is a medium power GaAs FET


    Original     		PDF HWC30NC 123456789ABC7DEF7 HWC30NC

    IN 5406

    Abstract: F24G 1S121 M 16100 39 2 1019
    Text: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.


    OCR Scan     		PDF HWC27NC HWC30NC HWC34NC chip67 IN 5406 F24G 1S121 M 16100 39 2 1019