Untitled
Abstract: No abstract text available
Text: HY1N60D / HY1N60M 600V / 1.0A 600V, RDS ON =12Ω@VGS=10V, ID=0.5A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger
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Original
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PDF
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HY1N60D
HY1N60M
2002/95/EC
O-251
O-252
O-252
ITO-251
MIL-STD-750
HY1N60D
1N60D
|
1N60M
Abstract: No abstract text available
Text: HY1N60D / HY1N60M 600V / 1.0A 600V, RDS ON =12Ω@VGS=10V, ID=0.5A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger
|
Original
|
PDF
|
HY1N60D
HY1N60M
2002/95/EC
O-251
O-252
O-252
ITO-251
MIL-STD-750
HY1N60D
1N60D
1N60M
|