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    HY5117404BJ Search Results

    HY5117404BJ Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY5117404BJ50 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BJ60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BJ70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF

    HY5117404BJ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: HY5117404B,HY5116404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY5117404B HY5116404B

    HYM532814

    Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
    Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2


    OCR Scan     		PDF HYM532124AW/ATW 532100AM HYM532120W/TW HYMS32120AW/ATW HY5118164BUC/BTC HY514400AJ HY5118160JC/TC HY5118160BJC/BTC HY531000AJ HYM532814 HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC

    116404B

    Abstract: HY5117404BT
    Text: - H Y U N D A I • HY5117404B,H Y5116404B 4Mx4, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF HY5117404B Y5116404B AO-A11) 116404B HY5117404BT

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


    OCR Scan     		PDF 256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HY5117404B Series 4M x 4-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY5117404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117404B HY5117404B 1AD45-00-MAY95 HY5117404BJ HY5117404BLJ HY5117404BAT HY5117404BSLT

    HY5117404

    Abstract: No abstract text available
    Text: “H Y U N D A I HY5117404B, HY5116404B 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -b it configuration with Extended Data O ut m ode C M O S DRAMs. Extended Data Out m ode


    OCR Scan     		PDF HY5117404B, HY5116404B HY5117404BJ HY5117404BSLJ HY5117404BT HY5117404BSLT HY5116404BJ HY5116404BSLJ Y5116404BT HY5116404BSLT HY5117404

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 7 4 0 4 B ,H Y 5 1 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration w ith Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process


    OCR Scan     		PDF

    211CAS

    Abstract: HY5117404B ceam A10C HY511 BATX19
    Text: •HYUNDAI H Y 5 1 1 7 4 0 4 B S e r ie s 4M x 4-bit CMOS DRAM with Extended Data Out P R E L IM IN A R Y DESCRIPTION T h e H Y 5117 404 B is the new generation and fast dynamic RAM organized 4 ,1 9 4 ,3 0 4 x 4-bit. The H Y 5117 404 B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117404B D45-00-MAY95 Mb75Gflfl HY5117404BJ HY5117404BLJ HY5117404BAT 211CAS ceam A10C HY511 BATX19

    rsst5

    Abstract: No abstract text available
    Text: “HYUNDAI HY5117404B Series 4M x 4-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY5117404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117404B Y5117404B 1AD45-00-MAY95 HY5117404BJ HY5117404BLJ HY5117404BAT HY5117404BSLT rsst5

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ