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    HY514460

    Abstract: No abstract text available
    Text: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF HY514460 Kx164 16-bit 400mil 40pin 40/44pin 1AC12-00-APR93 DDQ1553

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    Abstract: No abstract text available
    Text: ••HYUNDAI SEMICONDUCTOR H Y 5 1 4 4 6 0 _ S e r ie s 256K x 16-blt CMOS DRAM with 2 CAS&WPB PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF 16-blt HY514460 16-bit 40pin 40/44pln 1AC12-00-APR93 HY514460JC HY514460SUC