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    IC TX-2-c

    Abstract: Y51480 5LCAC
    Text: HY514800B Series HYUNDAI 512KX 8-blt CMOS DRAM PRELIMINARY DESCRIPTION The HY5148006 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY514800B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514800B 512KX HY5148006 1AC17-00-MAY94 HY514800BJC HY514800BLJC HY514800BSUC IC TX-2-c Y51480 5LCAC

    Untitled

    Abstract: No abstract text available
    Text: HY514800B Series HYUNDAI 512Kx8-bit CMOS DRAM PREUMINARY DESCRIPTION The HY514800B is the new generation and fast dynamic RAM organized 524,268 x 8-bits. The HY514800B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514800B 512Kx8-bit 11X388 1AC17-00-MAYM 50fi6 HY514800BJC

    r4kf

    Abstract: HY53C464LS fr4k HY53C256LS HY531000J
    Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S


    OCR Scan     		PDF 256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J