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    Untitled

    Abstract: No abstract text available
    Text: HY51V18165B Series •HYUNDAI 1M X 16-bit CMOS DRAM with Burst EDO PRELIMINARY DESCRIPTION The HY51V18165B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V118165B utilized Hyundai's C M O S silicon gate process technology as well as advenced circuit techniques


    OCR Scan     		HY51V18165B 16-bit 16-bit. HY51V118165B 1AD63-00-MAY95 HY51V18165BJC HY51V18165BTC PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY51V18165B Series 1M X 16-bit CMOS DRAM with Burst EDO PRELIMINARY DESCRIPTION The HY51V18165B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V118165B utilized Hyundai's CMOS silicon gate process technology as well as advenced circuit techniques


    OCR Scan     		HY51V18165B 16-bit 16-bit. HY51V118165B 1AD63-00-MAY95 HY51V18165BJC HY51V18165BTC PDF