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    HY51V65164

    Abstract: No abstract text available
    Text: HY51V64164,HY51V65164 4Mx16, Extended Data Out mode 1st Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    HY51V64164 HY51V65164 4Mx16, 16-bit 4Mx16 HY51V65164 PDF

    EV02

    Abstract: No abstract text available
    Text: “HYUNDAI HY51 V65164,HY51 V64164 4M x 16-bit CMOS DRAM with Extended Data Out PRELIM IN A R Y DESCRIPTION ORDERING INFORMATION T his 'a m ily is a 64M bit dynam ic RAM organized 4,194 304 x 16-bit configuration with Extended Data Out m ode CM O S DRAMs. Extended Data O ut mode


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    V65164 V64164 16-bit HY51V64164TC HY51V64164LJC HY51V64164SLTC HY51V65164TC Y51V65164LTC 5164W EV02 PDF

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    Abstract: No abstract text available
    Text: - H Y U N D A I « HY51V64164,HY51 V65164 4Mx16, Extended Data Out mode DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    HY51V64164 V65164 4Mx16, 16-bit PDF

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


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    256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ PDF

    HY5118164B

    Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
    Text: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B


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    16Mbit HY51V17404A HY51V17404B 300mil) 400mil) HY5118164B hy5118160b HY5118160 HY51V65400TC HY5117804B PDF

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


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    256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ PDF