HY57V641620ET
Abstract: hy57v641620etp HY57V641620 4MX16-Bit
Text: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark First Version Release 1.0 1. Changed tOH: 2.0 -> 2.5 [tCK = 7 & 7.5 CL3 Product] Nov. 2004 1.1
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Original
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16bits
180mA
150mA
133MHz]
Page11)
Page12)
64Mbit
4Mx16bit)
HY57V641620E
400mil
HY57V641620ET
hy57v641620etp
HY57V641620
4MX16-Bit
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PDF
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hy57v641620etp
Abstract: HY57V64 HY57V641620ET
Text: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark First Version Release 1.0 1. Changed tOH: 2.0 -> 2.5 [tCK = 7 & 7.5 CL3 Product] Nov. 2004 1.1
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Original
|
16bits
180mA
150mA
133MHz]
Page11)
Page12)
64Mbit
4Mx16bit)
HY57V641620E
400mil
hy57v641620etp
HY57V64
HY57V641620ET
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PDF
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hy57v641620etp
Abstract: HY57V641620 HY57V641620ELTP HY57V641620ET hy57v64162 576X1
Text: 64MBit SDRAMs based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 1.0 History First Version Release tOH: 2.0 -> 2.5 Draft Date Remark Nov. 2004 This document is a general product description and is subject to change without notice. Hynix does not assume any
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Original
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64MBit
16bits
64Mbit
4Mx16bit)
HY57V641620E
864bit
A10/AP
hy57v641620etp
HY57V641620
HY57V641620ELTP
HY57V641620ET
hy57v64162
576X1
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PDF
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HY57V641620ETP
Abstract: HY57V641620ET hy57v641620eltp hy57v64162 HY57V641620
Text: Preliminary HY57V641620E L T(P) Series 4Banks x 1M x 16bits Synchronous DRAM Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft May 2004 Preliminary 0.2 Change IDD2(N) Current value (Page 10)
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Original
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HY57V641620E
16bits
864bit
A10/AP
HY57V641620ETP
HY57V641620ET
hy57v641620eltp
hy57v64162
HY57V641620
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PDF
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hy57v641620
Abstract: No abstract text available
Text: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark First Version Release 1.0 1. Changed tOH: 2.0 -> 2.5 [tCK = 7 & 7.5 CL3 Product] 1.1 1. Changed Input High/Low Voltage (Page 08)
|
Original
|
16bits
180mA
150mA
133MHz]
Page11)
Page12)
64Mbit
4Mx16bit)
HY57V641620E
400mil
hy57v641620
|
PDF
|
hy57v641620etp
Abstract: HY57V641620ET 4MX16-Bit 875mil
Text: 64MBit SDRAMs based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 1.0 History First Version Release tOH: 2.0 -> 2.5 Draft Date Remark Nov. 2004 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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Original
|
64MBit
16bits
64Mbit
4Mx16bit)
HY57V641620E
864bit
A10/AP
hy57v641620etp
HY57V641620ET
4MX16-Bit
875mil
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary HY57V641620E L T(P)-xI Series 4Banks x 1M x 16bits Synchronous DRAM Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Sep. 2004 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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Original
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HY57V641620E
16bits
864bit
A10/AP
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PDF
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