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    HY5V22F Search Results

    HY5V22F Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HY5V22F Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY5V22FP Hynix Semiconductor 4 Banks x 1M x 32-Bit Synchronous DRAM Original PDF

    HY5V22F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    86-TSOP

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of


    Original     		PDF HY57V283220T/ HY5V22F 32Bit HY57V283220T HY5V22F 728-bit 576x32. 86-TSOP

    pin diagram of 2 to 4 decoder

    Abstract: HY57V283220 HY57V283220T HY5V22F
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of


    Original     		PDF HY57V283220T/ HY5V22F 32Bit HY57V283220T HY5V22F 728-bit 576x32. pin diagram of 2 to 4 decoder HY57V283220

    86-TSOP

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of


    Original     		PDF HY57V283220T/ HY5V22F 32Bit HY57V283220T HY5V22F 728-bit 576x32. 86-TSOP

    truth table for 8 to 3 decoder

    Abstract: HY57V283220
    Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as


    Original     		PDF HY57V283220T-I/ HY5V22F-I 32Bit HY57V283220T-I HY5V22F-I 728-bit 576x32. truth table for 8 to 3 decoder HY57V283220

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as


    Original     		PDF HY57V283220T-I/ HY5V22F-I 32Bit HY57V283220T-I HY5V22F-I 728-bit 576x32.

    HY57V283220

    Abstract: HY57V283220T HY5V22FP
    Text: HY57V283220T/ HY5V22FP 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : New generation This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY57V283220T/ HY5V22FP 32Bit HY57V283220T HY5V22FP 728-bit HY57V283220

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as


    Original     		PDF HY57V283220T-I/ HY5V22F-I 32Bit HY57V283220T-I HY5V22F-I 728-bit 576x32.

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : new generation 0.2 : FBGA Ball configuration typo 수정 Functional Block Diagram A10 -> A11 DC Operation Condition 에서 VDDmin 수정 3.0V -> 3.135V Capacitance Value 수정 C11,3,5 -> 4pf / C12 3.8 ->4pf


    Original     		PDF HY57V283220T/ HY5V22F 32Bit 11x13 DESCRIV22F HY57V283220T 400mil

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added 0.7 Changed FBGA Package Size from 11x13 to 8x13.


    Original     		PDF HY57V283220T/ HY5V22F 32Bit 133MHz 11x13 an283220T 400mil 86pin HY57V283220T

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of


    Original     		PDF HY57V283220T/ HY5V22F 32Bit HY57V283220T HY5V22F 728-bit 576x32.

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of


    Original     		PDF HY57V283220T/ HY5V22F 32Bit HY57V283220T HY5V22F 728-bit 576x32.

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : new generation 0.2 : FBGA Ball configuration typo 수정 Functional Block Diagram A10 -> A11 DC Operation Condition 에서 VDDmin 수정 3.0V -> 3.135V Capacitance Value 수정 C11,3,5 -> 4pf / C12 3.8 ->4pf


    Original     		PDF HY57V283220T/ HY5V22F 32Bit HY57V283220T 400mil 86pin

    4 Banks x 1m x 32Bit Synchronous DRAM

    Abstract: No abstract text available
    Text: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added


    Original     		PDF HY57V283220 HY5V22 32Bit 133MHz 11x13 400mil 86pin HY5V22F 4 Banks x 1m x 32Bit Synchronous DRAM

    HY57V283220

    Abstract: No abstract text available
    Text: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added


    Original     		PDF HY57V283220 HY5V22 32Bit 133MHz 11x13 Page15) 400mil 86pin