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Untitled Abstract: No abstract text available Text: HY62QF16406D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any	Original	PDF	HY62QF16406D 256Kx16bit 16bits. HYQF6406D
marking 1bc Abstract: No abstract text available Text: HY62QF16406D Series 256K x 16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HV62QF16406D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62QF16406D uses high performance full CMOS process technology	OCR Scan	PDF	HY62QF16406D 16bit HV62QF16406D 16bits. 48-ball HYQF6406D marking 1bc
256Kx16bit Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16 Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V	OCR Scan	PDF	GM76C256C GM76V256C GM76U256C GM76C256CW HY62CT08081E HY62WT08081E HY62K T08081E 32Kx8-bit, 256Kx16bit 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
FBGA 9 x 20 Abstract: HY62CT08081E hynix hy T0808 Text: Ordering Information Old Part No. System HY XX X XX X X X X X XX XX HYUNDAI HY XXX I TEMPERATURE BLANK : 0°C ~ 70°C E : -25°C - 85-C I : -40°C ~ 85°C : Memory Product PRODUCT GROUP 62 63 67 : Slow SRAM : Fast SRAM : Sync SRAM SPEED 80 10 12 15 17 20 25	OCR Scan	PDF	100ns 120ns 150ns 128KX 512Kx 256Kx HY62UF16101C HY62QF16101C HY62SF16101C HY62UF16201A FBGA 9 x 20 HY62CT08081E hynix hy T0808