hy528
Abstract: B5-190 bn2u HY528100
Text: •HYUNDAI HY5ZB1DD Series 12BK»B-b!t CMOS SRAM DESCRIPTION TTie HYB2S1D0 is a high-speed, low poWBr and 131,072 x B-bils CMOS sialic RAM fabricatad using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
|
OCR Scan
|
HY62B1DQ
70/B5/1D0/1Z0ns
1DD01-11-MAY94
HY52B1
HY62B100P
HYBZ01
HYBZ01OOLLP
HYB281
HY62B100LG
HY5201DOLLG
hy528
B5-190
bn2u
HY528100
|
PDF
|
D004 power ic
Abstract: 72B4
Text: > « Y U N D A I H Y ? 1 „D lDA 1 2 B K X B - b lt .S e r i e s CM OS SRAM PRELIMINARY DESCRIPTION The HY6ZB100A is a h ig h -s p e e d , law p o w s r an d 131,072 x B-bils CMOS s tatic RAM fabricated using Hyundai's h ig h p e rfo rm a n c e twin lu b CMOS p ro c e s s te c h n o lo g y . This high reliability p ro c e s s c uup lB d with in novativB circuit
|
OCR Scan
|
HY6ZB100A
HY62B1D0A
050fl|
1DD02-11-MAYS4
HY62B1DDA
HY62B100ALP
HY5201DOALLP
HYS281DOAG
HYB281D0ALG
HY62B1DCALLG
D004 power ic
72B4
|
PDF
|