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    odq1

    Abstract: HYM532120
    Text: -H Y U N D A I HYM532120 W-Series 1M X 32-bit CMOS DRAM MODULE DESCRIPTION T ie HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM m odule consisting of two HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for each


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    PDF HYM532120 32-bit HY5118160 HYM532120W/SLW/TW/SLTW HYM532120WG/SLWG HYM532120/SL HYM532120T/SLT odq1

    Untitled

    Abstract: No abstract text available
    Text: "HYUNDAI HYM532120A W-Series IM X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for


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    PDF HYM532120A 32-bit HY5118160B HYM532120AW/ASLW/ATW/ASLTW HYM532120AWG/ASLWG 4b750flfl 1CC03-10-DEC94

    HY5118160

    Abstract: HYM532120
    Text: •HYUNDAI HYM532120 W -Series 1 M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for each


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    PDF HYM532120 32-bit HY5118160 HYM532120W/SLW/TW/SLTW HYM532120WG/SLWG HYM532120T/SLT 4b750flfl 1CC03-10-DEC94

    HY5118160

    Abstract: HYM532120
    Text: •HYUNDAI H Y M 532120 X-Series 1M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted


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    PDF 32-bit HYM532120 HY5118160 HYM532120TXG7SLTXG DQ0-DQ31) 1DC02-10-FEB95 HYM532120/SL

    hy5118160b

    Abstract: No abstract text available
    Text: •«YUNDAI HYM532120A W-Series 1M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120A is a 1M x 32-bit Fast page mode CMOS DRAM m odule consisting of two HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for


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    PDF HYM532120A 32-bit HY5118160B HYM532120AW/ASLW/ATW/ASLTW HYM532120AWG/ASLWG SinHYM532120A HYM532120A/ASL YM532120AT/AS

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


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    PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    HYM532814

    Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
    Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2


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    PDF HYM532124AW/ATW 532100AM HYM532120W/TW HYMS32120AW/ATW HY5118164BUC/BTC HY514400AJ HY5118160JC/TC HY5118160BJC/BTC HY531000AJ HYM532814 HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC

    HYM532814

    Abstract: TRA8 L HYM536410 HYM532100AM HYM532100
    Text: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .


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    PDF HYM532124AW HYM532224AW HYM532224AE HYM532214AE HYM532414AM HYM532414BM 1Mx32 2Mx32 HYM532814 TRA8 L HYM536410 HYM532100AM HYM532100

    HYM536100AM

    Abstract: HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM
    Text: TABLE OF CONTENTS 1. INDEX 1 Table of C ontents. 2. PRODUCT QUICK GUIDE Ordering In fo rm atio n . Quick Reference . How and What to know as reading Part No.


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    PDF HYM532124AW HYM532224AW HYM532224AE HYM532214AE HYM532414AM HYM532414BM HYM536A414AM HYM536A414BM HYM532814AM HYM532814BM HYM536100AM HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM

    HY5118160JC

    Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
    Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM


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    PDF HYM581000BM HYM591000BM SPEEp50/60/70 HY514400AJ HY514400AJX2 HY531000AJX1 HYM584000AM HYM584000DM HYM594000AM HYM594000DM HY5118160JC HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W

    d 100 d

    Abstract: Y514100A HYM532220
    Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"


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    PDF HYM5V64104AX/ATX HYM5V64124AX/ATX HYM5V64100AN/ATN HYM5V64100AX/ATX HYM5V64120AX/ATX HYMSV72103AN/ATN HYM5V72A100ATN HYM5V72A120ATX HY51V16164B HY51V18164BJ/BT d 100 d Y514100A HYM532220