Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for
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OCR Scan
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HYM53221OA
32-bit
HYM53221
HY5117800B
HYM53221OAE/ASLE/ATE/ASLTE
4b750Afl
1CE13-10-DEC94
HYM532210A
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HYUNDAI i10
Abstract: No abstract text available
Text: “H Y U N D A I HYM532210A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221OA is a 2M x 32-bit Fast Page m ode CMOS DRAM m odule consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is m ounted for
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OCR Scan
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HYM532210A
32-bit
HYM53221OA
HY5117800B
HYM53221OAE/ASLE/ATE/ASLTE
HYM53221OAEG/ASLEG/ATEG/ASLTEG
DQ0-DQ31)
1CE13-10-DEC94
HYUNDAI i10
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532210A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221OA is a 2M x 32-bit Fast Rage mode CMOS ORAM module consisting of four HY5117800B In 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for
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OCR Scan
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HYM532210A
32-bit
HYM53221OA
HY5117800B
HYM53221OAE/ASLE/ATE/ASLTE
HYMS3221OAEG/ASLEG/ATEG/ASLTEG
DQ0-DQ31)
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PDF
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