HYM532814B
Abstract: No abstract text available
Text: “H Y U N D A I HYM532814B M-Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 j F and 0.01 (iF decoupling capacitors are
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HYM532814B
32-bit
HYM5328104B
HY5117404B
HYM532814BM/BSLM/BTM/BSLTM
HYM532814BMG/BSLMG/BTMG/BSLTMG
HYM532814B
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HYM5328104B
Abstract: HYM532814B HYM532810 HYM532814
Text: •HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT D ESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitors are
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OCR Scan
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PDF
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HYM532814B
32-bit
HYM5328104B
HY5117404B
HYM5328148M/BSLM/BTM/BSLTM
HYM532814BMG/BSLMG/B7MG/BSLTMG
100B6
002f3
G0GS47S
HYM532810
HYM532814
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Untitled
Abstract: No abstract text available
Text: »HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.lyF and 0.01 nF decoupling capacitors are
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OCR Scan
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PDF
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HYM532814B
32-bit
HYM5328104B
HY5117404B
HYM532814BM/BSLM/BTM/BSLTM
HYM532814BMG/BSLMG/BTMG/BSLTMG
100ffi
004i10*
HYM532814B
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