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    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		PDF HYM581000A HY514400 HYM581000AM 50nYCLE 1BB03-20-MAY93 061MAX.

    Untitled

    Abstract: No abstract text available
    Text: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000B HY514400A 22//F HYM581000BM/BLM 1BB05-00-MAY93 4b750fifi 4b75Dflfl

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM581000B Series SEMICONDUCTOR 1M x 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-brt Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.2^/F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000B HY514400A HYM581000BM/BLM 1BB0fr40-M 1BB05-00-M 1BB05-00-MAY93

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8 -b it CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000C HY531000A 22/iF HYM581000CM/CLM 1BB07-10-M G0Q174S DDQ17M3

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		PDF HYM581000C HY531000A 22fiF HYM581000CM/CLM 1BB07-10-M 1BB07-10-MAY93 1BB07-1

    Untitled

    Abstract: No abstract text available
    Text: HYM581000B M-Series • H Y U N D A I 1M x8-btt CMOS DRAM MODULE DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000B HY514400A HYM581000BM/BLM 11-OmW 1BB05-01-FEB94 4b75D6Ã GDD32bÃ

    CRL4

    Abstract: s8100
    Text: HYU N DA I E L E C T R O N I C S 3^E J> • Mb7SGflö G0003flfl 2 « H Y N K 1M X 8-Bit CMOS DRAM MODULI1?”. M431201B-APR91 DESCRIPTION FEATURES T c a - 2 . ?> tRAC tCAC tpc HYM581000-60 60 20 40 HYM S81000-70 70 20 40 H YM581000-80 80 20 45 HYM 581000-10


    OCR Scan     		PDF G0003flfl M431201B-APR91 HYM581000 HY531000J HYM581000M HYM581000P HYM581000-60 S81000-70 YM581000-80 36l-- CRL4 s8100

    HYM581000M

    Abstract: No abstract text available
    Text: HYUNDAI ELECTRONICS SIE Mb750flß □ □ □ □ T I S IHYNK 2TG HYM581000 •Ï2YUNDA SEMICONDUCTO D . im 4L-. -. 1\ I X 8-Bit C M O s DRAM MODI 1.1 M431201B-OCT91 DESCRIPTION The HYM581000M is a 1M words by 8bits dynamic RAM module and consists o f eight


    OCR Scan     		PDF Mb750flß HYM581000 M431201B-OCT91 HYM581000M HY531000J 22fiF 7777777r/ 4b75Dfl HYM581000

    U351

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM581000A Series 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. Q.22fiF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		PDF HYM581000A HY514400 22fiF HYM581000AM 1BB03-20-MAY93 1BB03-20-MAYS3 U351

    HY5118160JC

    Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
    Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM


    OCR Scan     		PDF HYM581000BM HYM591000BM SPEEp50/60/70 HY514400AJ HY514400AJX2 HY531000AJX1 HYM584000AM HYM584000DM HYM594000AM HYM594000DM HY5118160JC HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W

    HY531000

    Abstract: HYM581000 GO2S
    Text: •HYUNDAI SEMICONDUCTOR HYM581000 Series 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000 is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2fyF decoupling capacitor is mounted fo r each DRAM.


    OCR Scan     		PDF HYM581000 HY531000 HYM581000M 1BB01-11-M 1BB01 -11-MAY93 1BB01 GO2S

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM581000 Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000 is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000 In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000 HY531000 HYM581000M 1BB01-11-MAY93 4L750afl HYM581000M 1BB01-11-M HYM581000A

    Untitled

    Abstract: No abstract text available
    Text: « }J • ■ ^ ,c uo ,ndudctao Ì SEMICONDUCTOR H Y im 5 8 1 0 0 0 M x8 -K t c m o s d r a m m o d u l e M431201B-APR91 DESCRIPTION The HYM581000 is a 1M words by 8 bits dy­ namic RAM module and consists of eight HY531000J Fast Page mode CM OS DRAM in 20/26 pin SOJ package m ounted on a 30 pin


    OCR Scan     		PDF 431201B-APR91 HYM581000 HY531000J HYM581000M HYM581000P HYM581000

    HYM591000AM

    Abstract: bb04 HY531000
    Text: •HYUNDAI SEMICONDUCTOR HYM591000A Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted


    OCR Scan     		PDF HYM591000A HY514400 HY531000 HYM591000AM tWCHf31) BB04-20-M 04-20-M bb04