Untitled
Abstract: No abstract text available
Text: HYM584000A M-Series •H Y U N D A I 4M x 8-blt CMOS DRAM MODULE DESCRIPTION The HYM584000A is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted for each DRAM.
|
OCR Scan
|
PDF
|
HYM584000A
HY514100A
22fiF
HYM584000AM/ALM
acce4000A
1BC03-11-FEB94
0-05M
031MIN.
|
U5SB
Abstract: 1621-B AY83
Text: •HYUNDAI SEMICONDUCTOR HYM584000A Series 4M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM584000A is a 4M x 8-bit Fast page mode CM O S DRAM module consisting of eight HY514100A in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.
|
OCR Scan
|
PDF
|
HYM584000A
HY514100A
HYM584000AM/ALM
1BC03-10-M
005f0
061MAX.
U5SB
1621-B
AY83
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM584000B Series SEMICONDUCTOR 4M xS-blt CMOS DRAM MODULE PRELIM IN ARY DESCRIPTION The HYM584000B is a 4M x 8-bit Fast page mode CM O S DRAM module consisting of two HY5117400 in 24/28 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22 iF decoupling capacitors are mounted under each DRAMs.
|
OCR Scan
|
PDF
|
HYM584000B
HY5117400
HYM584000BM/BLM
4b750flfl
00Qlfl40
C05-00-MAY93
1BC05-00-
|
Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM584000B Series SEMICONDUCTOR 4M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION Tìie HYM584000B is a 4M x 8-bit Fast page mode CM O S DRAM module consisting of two HY5117400 in 24/28 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22jiFdecoupling capacitors are mounted under each DRAMs.
|
OCR Scan
|
PDF
|
HYM584000B
HY5117400
22jiFdecoupling
HYM584000BM/BLM
1BC05-00-M
1BC05-00-MAY93
|
Untitled
Abstract: No abstract text available
Text: HYM584000B M-Series «HYUNDAI 4M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM584000B is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0 .22/ jF decoupling capacitors are mounted under each DRAMs.
|
OCR Scan
|
PDF
|
HYM584000B
HY5117400
HYM584000BM/BLM
1BC0S-11-MARM
781MIN.
1BC05-11-MAR94
4b750flfl
|
Untitled
Abstract: No abstract text available
Text: •H YU N D AI SEMICONDUCTOR HYM584000A Series 4M xS-blt CMOS DRAM MODULE DESCRIPTION The HYM584Q00A is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100A In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/xF decoupling capacitor is mounted for each DRAM.
|
OCR Scan
|
PDF
|
HYM584000A
HYM584Q00A
HY514100A
22/xF
HYM584000AM/ALM
1BC03-10-MAY93
4b750flfl
|
HY5118160JC
Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM
|
OCR Scan
|
PDF
|
HYM581000BM
HYM591000BM
SPEEp50/60/70
HY514400AJ
HY514400AJX2
HY531000AJX1
HYM584000AM
HYM584000DM
HYM594000AM
HYM594000DM
HY5118160JC
HY531000AJ
HY-53
HYM591000B
HYM536100AM
HYM532120W
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM584000 Series SEMICONDUCTOR 4M x 8-blt CMOS DRAM MODULE DESCRIPTION The HYM584000 Is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.
|
OCR Scan
|
PDF
|
HYM584000
HY514100
HYM584000M
1BC01-20-MAY93
01-20-M
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR H Y M 584000 Series 4M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM584000 Is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100 In 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.22pF decoupling capacitor Is mounted for each DRAM.
|
OCR Scan
|
PDF
|
HYM584000
HY514100
HYM584000M
1BC01-20-M
1BC01-20-MAY93
25iMAX.
1BCOI-20-MAY93
|