IGBT 1000V .200A
Abstract: irf 100v 200A Diode 15b RG2 DIODE Diode IR 1254 GA200TS60UX
Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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Original
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PDF
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I27221
GA200TS60UX
IGBT 1000V .200A
irf 100v 200A
Diode 15b
RG2 DIODE
Diode IR 1254
GA200TS60UX
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GA200TS60UX
Abstract: IGBT 100V 200A
Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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Original
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PDF
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I27221
GA200TS60UX
12-Mar-07
GA200TS60UX
IGBT 100V 200A
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Untitled
Abstract: No abstract text available
Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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Original
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PDF
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I27221
GA200TS60UX
08-Mar-07
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