IRFI840G
Abstract: EK24
Text: IRLI530NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K "
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IRLI530NPbF
O-220
I840G
IRFI840G
EK24
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IRFI840G
Abstract: No abstract text available
Text: PD- 95427A IRLI3705NPbF Lead-Free 1 IRLI3705NPbF 2 IRLI3705NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432
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5427A
IRLI3705NPbF
O-220
I840G
IRFI840G
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Untitled
Abstract: No abstract text available
Text: PD- 95976 IRFI9Z24GPbF Lead-Free 1 IRFI9Z24GPbF 2 IRFI9Z24GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432
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IRFI9Z24GPbF
O-220
I840G
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Untitled
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFW/I840A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.85Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V
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IRFW/I840A
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Untitled
Abstract: No abstract text available
Text: PD- 95648 IRFIBE20GPbF Lead-Free 1 IRFIBE20GPbF 2 IRFIBE20GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432
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IRFIBE20GPbF
O-220
I840G
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Untitled
Abstract: No abstract text available
Text: PD- 95975 IRFI9Z14GPbF Lead-Free 1 IRFI9Z14GPbF 2 IRFI9Z14GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432
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IRFI9Z14GPbF
O-220
I840G
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Untitled
Abstract: No abstract text available
Text: TLV320AIC3254 Ultra Low Power Stereo Audio Codec With Embedded miniDSP www.ti.com SLAS549A – SEPTEMBER 2008 – REVISED OCTOBER 2008 1 Introduction 1.1 Features 1.2 • • • • • • • • • • • • • • • • • • • • • • •
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TLV320AIC3254
SLAS549A
100dB
48ksps
32-pin
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IRFz44n equivalent
Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
Text: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier
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IRFIZ44N
O-220
IRFz44n equivalent
IRFIZ44N
IRFZ44N
IRFIZ44N equivalent
irf 630
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Untitled
Abstract: No abstract text available
Text: PD- 95655 IRLIZ14GPbF Lead-Free Document Number: 91315 7/26/04 www.vishay.com 1 IRLIZ14GPbF Document Number: 91315 www.vishay.com 2 IRLIZ14GPbF Document Number: 91315 www.vishay.com 3 IRLIZ14GPbF Document Number: 91315 www.vishay.com 4 IRLIZ14GPbF Document Number: 91315
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IRLIZ14GPbF
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD- 95654 IRLI640GPbF Lead-Free Document Number: 91314 7/26/04 www.vishay.com 1 IRLI640GPbF Document Number: 91314 www.vishay.com 2 IRLI640GPbF Document Number: 91314 www.vishay.com 3 IRLI640GPbF Document Number: 91314 www.vishay.com 4 IRLI640GPbF Document Number: 91314
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IRLI640GPbF
08-Mar-07
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MOSFET IRFB 630
Abstract: IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFB41N15D IRFIB41N15D IRFS41N15D
Text: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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93804B
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
AN1001)
O-220AB
O-220
O-262
IRFB41N15D
MOSFET IRFB 630
IRFB 630
93804B
MOSFET IRFB 630 Datasheet
transistor IRF 630
AN1001
IRF1010
IRFIB41N15D
IRFS41N15D
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IRF 042
Abstract: irf 540 mosfet IRL3803 IRLI3803
Text: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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1320B
IRLI3803
O-220
IRF 042
irf 540 mosfet
IRL3803
IRLI3803
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IRLIB4343PbF
Abstract: No abstract text available
Text: PD - 95755 DIGITAL AUDIO MOSFET IRLIB4343PbF Features l l l l l l l l Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI
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IRLIB4343PbF
O-220
IRLIB4343PbF
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IRF1310N
Abstract: IRF1310n equivalent 4.5V to 100V input regulator
Text: PD - 94873 IRFI1310NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.036Ω G Description Fifth Generation HEXFETs from International Rectifier
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IRFI1310NPbF
O-220
I840G
IRF1310N
IRF1310n equivalent
4.5V to 100V input regulator
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IRL530N
Abstract: No abstract text available
Text: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V
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IRLI530NPbF
O-220
I840G
IRL530N
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AIC3253
Abstract: electret condenser microphone preamplifier G016 TLV320AIC3253 cic compensation filters COEF23 25-TAP TLV320AIC3x 311DB 90C52
Text: TLV320AIC3253 Applications Reference Guide Literature Number: SLAU303 March 2010 2 SLAU303 – March 2010 Submit Documentation Feedback Copyright 2010, Texas Instruments Incorporated Chapter 1 SLAU303 – March 2010 TLV320AIC3253 Overview • • • •
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TLV320AIC3253
SLAU303
TLV320AIC3253
AIC3253)
AIC3253
electret condenser microphone preamplifier
G016
cic compensation filters
COEF23
25-TAP
TLV320AIC3x
311DB
90C52
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IRFB 630
Abstract: MOSFET IRFB 630 Datasheet MOSFET IRFB 630 transistor IRF 630 120V DC to DC Converter 10A TO-220 FULLPAK Package AN1001 IRF1010 IRFB41N15D IRFIB41N15D
Text: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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Original
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93804B
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
AN1001)
O-220AB
O-220
O-262
IRFB41N15D
IRFB 630
MOSFET IRFB 630 Datasheet
MOSFET IRFB 630
transistor IRF 630
120V DC to DC Converter 10A
TO-220 FULLPAK Package
AN1001
IRF1010
IRFIB41N15D
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1530A
Abstract: f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44
Text: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A
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IRFI9Z34N
O-220
1530A
f1010e
IRF 10A 55V
irf 9246
I840G
IRF9Z34N
IRFI9Z34N
IRF MOSFET 10A P
irf power mosfet
Equivalent IRF 44
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IRF 250V 100A
Abstract: No abstract text available
Text: IRFW/I840A A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .8 5 ^ 8 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V
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OCR Scan
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IRFW/I840A
IRF 250V 100A
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFW/I840A • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = 0 . 8 5 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) : 0.638 £1 (Typ.) > Avalanche Rugged Technology
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OCR Scan
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IRFW/I840A
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFW/I840A A d van ced Power MOSFET FEATURES - 500 V ^DS on = 0.85Q B ^D S S > a ♦ Lower Input Capacitance II ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V
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OCR Scan
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IRFW/I840A
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFW/I840A Advanced Power MOSFET FEATURES BV qss = 5 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS= 500V Lower R ^ on) : 0.638 £2 (Typ.)
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OCR Scan
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IRFW/I840A
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PDF
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SEC IRF 640
Abstract: No abstract text available
Text: IRFW/I840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
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OCR Scan
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IRFW/I840A
SEC IRF 640
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PDF
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tr/2088 RGB-5
Abstract: 2088 RGB-5
Text: REV ISIO NS . RIGHTS RESERVED LTR DESCRIPTION DATE LOGO CHANGE DWN 08MAÏ20I3 TY APVD KZ ~ ïï= 5: Q O', MAT E R I A L S : -HOUSING: HI GH T E MP E R A T U R E NYLON, BLACK, UL 9 4 V - 0 -SHIELD: 0.20mm T H I C K , BRASS P R E P L A T E D WI T H 1 . 2 7 / j m MI N S E M I - B R I G H T
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OCR Scan
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I840738-4
I840738-6
tr/2088 RGB-5
2088 RGB-5
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PDF
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