2SK1199
Abstract: ir2a Hitachi Scans-001 ir2a diode diode ir2a
Text: 2SK1199 44<ib20S GG13EaT 6D3 « H I T 4 HITACHI/ OPTOELECTRONICS blE D S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • • No Secondary Breakdown Suitable for Switching Regulator and
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GG13EaT
T0-220AB)
PWS10/Â
7c-25
44Tb20S
DG13532
2SK1199_
2SK1199
ir2a
Hitachi Scans-001
ir2a diode
diode ir2a
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Untitled
Abstract: No abstract text available
Text: H I T A C H I / O P T O E L E C T R O N IC S 51E D • m ib B O S Q011023 ■ H IT M T - a P i'lS GN6020C Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-3P High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max
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Q011023
GN6020C
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Untitled
Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS SHE D • HHTbSDS GG12111 ÔT5 « H I T 4 HL1324MF InGaAsP LD Description The HL1324MF is an InGaAsP long wavelength laser diode suited for short and medium range optical communications (optical data links, optical LANs, subscriber systems).
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GG12111
HL1324MF
HL1324MF
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hitachi sr 302
Abstract: HL1561BF te 1819 HL1561A HL1561AC 10 gb laser diode DD121S3 Hitachi Scans-001
Text: 54 E J> HITACHI/ OPTOELECTRONICS • HHTbSDS DD121S3 254 « H I T 4 H L 1 5 6 1 A /A C /B F InGaAsP LD Description The HL1561 A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)
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HL1561A/AC/BF
DD121S3
HL1561A/AC/BF
HL1561BF
HL1561
HL1561BF)
561A/AC/BF)
HE8815VG
HE8813VG
HE8815VG
hitachi sr 302
te 1819
HL1561A
HL1561AC
10 gb laser diode
Hitachi Scans-001
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Untitled
Abstract: No abstract text available
Text: HITACHI/ OPTOEL ECT RONICS 5ME » • MMTbEQS OGIEGIS SbT « H I T 4 HL7802E/G GaAIAs LD Description The HL7802E/G are 0.78 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.
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HL7802E/G
HL7802E/G
ib20S
T-41-05
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HL7802E
Abstract: HE8807SG HE8813VG HE8815VG HL7802G HL8312E Hitachi Scans-001 he8813 HE8403 T9040
Text: HITACHI/ OPTOEL ECT RONICS 5ME » • MMTbEQS OGIEGIS SbT « H I T 4 HL7802E/G GaAIAs LD Description The HL7802E/G are 0.78 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.
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HL7802E/G
HL7802E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HL7802E
HE8807SG
HE8813VG
HL7802G
HL8312E
Hitachi Scans-001
he8813
HE8403
T9040
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