23C512-20
Abstract: 23C512
Text: SAMSUNG SEMICONDUCTOR INC S3E D • 7=ib4145 G 0 D 0 3 7 0 KM23C512 ? ■ CMOS MASK ROM is " 6 4 K x 8 Bit Mask ROM FEATURES GENERAL DESCRIPTION • Fully static operation • Silicon gate CMOS technology • Maximum access time 23C512-15: 150 ns 23C512-20: 200 ns
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ib4145
KM23C512
23C512-15:
23C512-20:
23C512-25:
23C512
23C512I
KM23C512
1N3064
7Tb4142
23C512-20
23C512
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SSP3N80
Abstract: CM 502 SSP3N70 MOSFET 30A 700V
Text: N-CHANNEL POWER MOSFETS SSP3N80/70 FEATURES TO-220 • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSP3N80/70
SSP3N80
SP3N70
SSP3N70
CM 502
MOSFET 30A 700V
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p-channel 250V 16A power mosfet
Abstract: p-channel 250V power mosfet SFP9614 VGS-30V PCHANNEL LSC16
Text: SFP9614 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVqss = -250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 pA Max. @ VDS = -250V
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SFP9614
-250V
O-220
30-OTO
T0-220
QQ3b32fl
500MIN
7Tb414E
DD3b33D
p-channel 250V 16A power mosfet
p-channel 250V power mosfet
SFP9614
VGS-30V PCHANNEL
LSC16
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