Untitled
Abstract: No abstract text available
Text: S A M S UN G E L E C T R O N I C S INC b7E » • 7*ib414E D 0 1 7 5 2 3 KM68V4000ÜL-L 434 H S H 6 K CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 8 5 ,1 0 0 ,120ns (Max.) • Low Power Dissipation
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ib414E
KM68V4000Ã
120ns
KM6SV4000LP
600mil)
KM68V4000LG
525mil)
KM68V4G00LT
400mil)
KM68V4000LR
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • KM23C2100A 7*ib414E DDlbT7ö Sñfi CMOS MASK ROM 2M-Bit 256Kx8/128Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 100ns (max.)
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KM23C2100A
ib414E
256Kx8/128Kx
100ns
50/iA
40-pln
KM23C2100A
KM23C2100A)
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Untitled
Abstract: No abstract text available
Text: KM44C 1 003 DJ CMOS D R AM ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , powér
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KM44C
KM44C1003DJ
G03416B
00341f
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Untitled
Abstract: No abstract text available
Text: KS7306 DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7306 is a CCD digital signal processor. The electronic video signal that passed the color filter array CFA pattern of CCD is put to the process of dual correlation sampling and then converted to digital video signal by A/D converter.
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KS7306
KS7306
100-QFP-1414
25ZT1
03125Z
VID-97-D004
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Untitled
Abstract: No abstract text available
Text: KS9282B CMOS INTEGRATED CIRCUIT DSP+DAC 16BIT FOR CDP The KS9282B is a CMOS integrated circuit designed for the Digital Audio Signal processor of the CDP (Compact Disc Player) application. It is a Monolithic IC that builts-in 16-Bit Digital to Analog Converter to add to the conventional DSP function.
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KS9282B
16BIT)
KS9282B
16-Bit
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • TTbHlHS ü ü lS flm 31Ö CMOS DRAM KM48C512A/AL/ALL 512Kx8 Bit C M O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM48C512A/AL/ALL is a C M O S high speed 524,288 bit x 8 Dynamic Random A cce ss Memory.
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KM48C512A/AL/ALL
512Kx8
KM48C512A/AL/ALL
KM48C512A/AUALL-6
110ns
KM48C512A/AL/ALL-7
130ns
KM48C512A/AL/ALL-8
150ns
28-LEAD
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Untitled
Abstract: No abstract text available
Text: KMM5321204AW ELECTRONICS DRAM Module KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIM M , 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321204AW consists of two CMOS
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KMM5321204AW
KMM5321204AW/AWG
1Mx32
KMM5321204AW
1Mx16bit
42-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: K S57C 0108 4-BIT CMOS Microcontroller ELECTRO N ICS Product Specification OVERVIEW The KS57C0108 single-chip CMOS microcontroller has been designed for high-performance using Samsung's newest 4-bit CPU core. With two 8-bit timer/counters, an 8-bit serial I/O interface, and eight n-channel open-drain
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KS57C0108
42-pin
44-pin
002b21fl
71L4142
QG2b211
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Untitled
Abstract: No abstract text available
Text: KM68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A c c e s s Tim e: 8, 9 , 1 0 , 1 2 , 15n s M ax. • Low P ow er D issipation S tandb y (TTL) : 60m A (M ax.) The KM68B1002 is a 1,048,576-bit high-speed S tatic
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KM68B1002
KM68B1002
576-bit
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Untitled
Abstract: No abstract text available
Text: K S 5 7C 2016 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit CPU core. With an up-to-20-digit LCD direct drive capability and up to 40 pins for LCD segment data
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KS57C2016
up-to-20-digit
16-bit
100-pin
002b3b4
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pin diagram of 7414
Abstract: KM64B1003J-10 KM64B1003J-12 KM64B1003J-15 pin 7 diagram of 7414
Text: BiCMOS SRAM KM64B1003 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)
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KM64B1003
KM6481003J-8:
165mA
KM64B1003J-10:
155mA
KM64B1003J-12:
145mA
KM64B1003J-15:
135mA
KM64B1003J
pin diagram of 7414
KM64B1003J-10
KM64B1003J-12
KM64B1003J-15
pin 7 diagram of 7414
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KMM5324
Abstract: No abstract text available
Text: Preliminary DRAM MODULE KMM5324004ASW/ASWG KMM5324004ASW/ASWG EDO Mode 4M X 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 5324004A is a 4Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KM M 5324004A
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KMM5324004ASW/ASWG
4Mx16,
324004A
4Mx32bits
4Mx16bits
72-pin
KMM5324004ASW/ASWG
5324004ASW
KMM5324
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MLT 22 745
Abstract: KS9282B a22t EFM noise filter vc001 vc-001
Text: KS9282B CMOS INTEGRATED CIRCUIT DSP+DAC 16BIT FOR CDP The KS92B2B is a CMOS integrated circuit designed for the Digital A udio Signal processor of the CDP (Compact Disc Player) application. It is a Monolithic IC that builts-in 16-Bit Digital to Analog Converter to add to the conventional DSP function.
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KS9282B
16BIT)
KS9282B
16-Bit
002SLS^
MLT 22 745
a22t
EFM noise filter
vc001
vc-001
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