Untitled
Abstract: No abstract text available
Text: IBM11S2320NL2M x 3212/8, 5.0V, Au. IBM11S2320NN2M x 3212/8, 3.3V, Au. IBM11S1320NP IBM11S2320NP IBM11S1320NM IBM11S2320NM 1M/2M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns
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IBM11S2320NL2M
IBM11S2320NN2M
IBM11S1320NP
IBM11S2320NP
IBM11S1320NM
IBM11S2320NM
72-Pin
110ns
130ns
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Untitled
Abstract: No abstract text available
Text: IBM11S2320NL2M x 3212/8, 5.0V, Au. IBM11S2320NN2M x 3212/8, 3.3V, Au. IBM11S1320LP IBM11S2320LP IBM11S1320LM IBM11S2320LM 1M/2M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns
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IBM11S2320NL2M
IBM11S2320NN2M
IBM11S1320LP
IBM11S2320LP
IBM11S1320LM
IBM11S2320LM
72-Pin
110ns
130ns
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4468 8 PIN
Abstract: DATASHEET 4468 TCHD
Text: IBM11S2320NL2M x 3212/8, 5.0V, Au. IBM11S2320NN2M x 3212/8, 3.3V, Au. IBM11S1320LP IBM11S2320LP IBM11S1320LM IBM11S2320LM 1M/2M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns
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IBM11S2320NL2M
IBM11S2320NN2M
IBM11S1320LP
IBM11S2320LP
IBM11S1320LM
IBM11S2320LM
72-Pin
110ns
130ns
4468 8 PIN
DATASHEET 4468
TCHD
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IBM11M4730C4M
Abstract: No abstract text available
Text: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1645L Preliminary 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Extended Data Out Page Mode DIMM • Performance: • • • • -60 -70 -Buffered inputs except RAS, Data
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IBM11M4730C4M
E12/10,
IBM11M1645L
1Mx64
104ns
124ns
SA14-4617-02
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Untitled
Abstract: No abstract text available
Text: Discontinued 9/98 - last order; 3/99 last ship IBM11S2320NL2M x 3212/8, 5.0V, Au. IBM11S2320NN2M x 3212/8, 3.3V, Au. IBM11S1325LP IBM11S2325LP 1M/2M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 tRAC RAS Access Time
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IBM11S2320NL2M
IBM11S2320NN2M
IBM11S1325LP
IBM11S2325LP
72-Pin
104ns
128ms
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DIMM 72 pin out
Abstract: No abstract text available
Text: IBM11S2320NL2M x 3212/8, 5.0V, Au. IBM11S2320NN2M x 3212/8, 3.3V, Au. IBM11S1325LP IBM11S2325LP IBM11S1325LM IBM11S2325LM 1M/2M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -6R -70 tRAC RAS Access Time
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IBM11S2320NL2M
IBM11S2320NN2M
IBM11S1325LP
IBM11S2325LP
IBM11S1325LM
IBM11S2325LM
72-Pin
104ns
124ns
DIMM 72 pin out
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IBM11M4730C4M
Abstract: No abstract text available
Text: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1645L 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Extended Data Out Page Mode DIMM • Performance: • • • • -60 -70 -Buffered inputs except RAS, Data
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IBM11M4730C4M
E12/10,
IBM11M1645L
1Mx64
104ns
124ns
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IBM REV 2.8
Abstract: 4620 IBM11M4730C4M
Text: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1735B 1M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx72 Extended Data Out Page Mode DIMM • Performance: -60 -70 RAS Access Time 60ns 70ns CAS Access Time 20ns 25ns
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IBM11M4730C4M
E12/10,
IBM11M1735B
1Mx72
104ns
124ns
IBM REV 2.8
4620
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IBM11M4730C4M
Abstract: No abstract text available
Text: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1645B 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 RAS Access Time 60ns 70ns CAS Access Time 20ns 25ns
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IBM11M4730C4M
E12/10,
IBM11M1645B
1Mx64
104ns
124ns
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Untitled
Abstract: No abstract text available
Text: Discontinued 9/98 - last order; 3/99 last ship IBM11N1645L1M x 64 E10/10, 3.3V, Au, EDOMMDL24DSU-001020631. IBM11N1735Q1M x 72 E10/10, 3.3V, Au, EDOMMDL24DSU-001020631. IBM11N1645L IBM11N1735Q 1M x 64/72 DRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte
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IBM11N1645L1M
E10/10,
EDOMMDL24DSU-001020631.
IBM11N1735Q1M
IBM11N1645L
IBM11N1735Q
1Mx64,
1Mx72
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Untitled
Abstract: No abstract text available
Text: IBM11M1640B1M x 6410/10, 5.0V, AuMMDL19DSU-001015527. IBM11M1640B 1M x 64 DRAM MODULE Features • Optimized for byte-write non-parity applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 1Mx64 Fast Page Mode DIMM
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IBM11M1640B1M
AuMMDL19DSU-001015527.
IBM11M1640B
1Mx64
110ns
130ns
SA14-4605-02
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IBM11M4730C4M
Abstract: No abstract text available
Text: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1645B 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 RAS Access Time 60ns 70ns CAS Access Time 20ns 25ns
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IBM11M4730C4M
E12/10,
IBM11M1645B
1Mx64
104ns
124ns
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IBM0118180M
Abstract: IBM0118180P1M
Text: IBM0118180M 1M x 1810/10, 5.0V, LP, SR. IBM0118180P1M x 1810/10, 3.3V, LP, SR. IBM11T1640LP 1M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts • Optimized for byte-write non-parity applications
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IBM0118180M
IBM0118180P1M
IBM11T1640LP
VSS/18VCC
110ns
130ns
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Untitled
Abstract: No abstract text available
Text: Discontinued 9/98 - last order; 3/99 last ship IBM11T1645LP 1M x 6410/10, 3.3V, EDOMMDD41DSU-001019232. IBM11T1645LP 1M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts
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IBM11T1645LP
EDOMMDD41DSU-001019232.
IBM11T1645LP
1Mx64
VSS/18VCC
104ns
124ns
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0118160B
Abstract: 0116165B 014400B 0117805 014400
Text: Alphanumeric Index Part Number Type Organization Features Page Number IBM 0116160. .DRA M . . 1M x 16. 12/8, 5 . 0 V .343 IBM0116160M .D R A M . . 1 M x 16. 12/8, 5.0V, LP, S R .343
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IBM0116160M
0116160P.
0116165B.
0116165M
0118160B
0116165B
014400B
0117805
014400
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Con 39D
Abstract: No abstract text available
Text: IBM 0 1 1 6 1 8 0 M IBM 0 1 1 6 1 8 0 P Advance 1M x 18 Low Power DRAM Features • 1,048,576 word by 18 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • 4096 refresh cycles/256ms • High Performance: -50 • Low Power Dissipation
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cycles/256ms
200nA
IBM0116180M
IBM0116180P
IBM011G180P
SO/44
Con 39D
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014400B
Abstract: No abstract text available
Text: IBM 014400B IBM 014400 IBM 014400C IB M 014400A 1M x 4 D R A M Features • 1 ,0 4 8 ,5 7 6 word by 4 bit organization • P ow er Supply: 3 .3 V ± 0 .3 V or 5 .0 V ± 0 .5 V • 1 0 2 4 refresh c y d e s /1 6 m s • High P erform ance: • - Active m ax
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014400B
014400C
14400A
110ns
130ns
4DSU-00
350mil;
06H0059
MMDD34DSU-00
300mil;
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Untitled
Abstract: No abstract text available
Text: IBM 11D1475B IBM 11E1475B IBM11D2475B IBM11E2475B 1M/2M x 32 Desktop ECC-on-SIMM Features • 72-Pin JED EC Standard Single-ln-Line Memory Module • High Performance C M O S process • Single 5V, ± 0.25V Power Supply • Performance: • All inputs & outputs are fully TTL & C M O S
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11D1475B
11E1475B
IBM11D2475B
IBM11E2475B
72-Pin
IBM11D1475B
QG03fl2Q
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Untitled
Abstract: No abstract text available
Text: IWKIC MX83C1 BEE IBM-Bit Mask ROM MB/3BBit Output FEATURES ORDER INFORMATION • Bit organization 1M x 16 word mode) 512K x 32 (double word mode) Part No. • Fast access time Random access: 100ns (max.) MX23C1622MC-10 • Page • Current 8 double words per page
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MX83C1
100ns
MX23C1622MC-10
100mA
50jiA
A0-A18
D0-D30
D31/A-1
23C1622-10
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a8303
Abstract: No abstract text available
Text: IBM 0 1 1 6 1 6 0 M IBM 0 1 1 6 1 6 0 P 1M x 16 Low Power DRAM Features • 1 ,0 4 8 ,5 7 6 w ord by 16 bit organization • S ingle 3 .3 V ± 0 .3 V or 5 .0 V ± 0 .5 V pow er supply • 4 0 9 6 refresh cy cles/256m s • High P erform ance: Low P ow er Dissipation
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cles/256m
DSU-00
43G9618
MMDD35DSU-00
a8303
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IBM 1Mx4
Abstract: No abstract text available
Text: IB M 1 1 D 1 4 8 0 B A IB M 1 1 E 1 4 8 0 B A 1M x 36 ECC-on-SIMM Features Single-error-correct SEC high-speed ECC • 72-Pin JEDEC-Standard Single In-Line Memory Module algorithm • Performance: Single 5V ± 0.25V Power Supply All inputs & outputs are fully TTL & C M O S
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72-Pin
130ns
11D1480BA
MMDS04DSU-01
IBM11D1480BA
IBM11E1480BA
IBM11E1480BA
IBM 1Mx4
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442250
Abstract: No abstract text available
Text: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1M x 16 12/8 EDO DRAM Features • 1 ,0 4 8 ,5 7 6 w o rd by 16 bit o rg a n iz a tio n • • S in g le 3 .3 V + 0 .3 V or 5 .0 V + 0 .5 V p o w e r s u p p ly . .n ^ S ta n d a rd P o w e r S P a n d L o w P o w e r (LP )
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IBM0116165
IBM0116165M
IBM0116165B
IBM0116165P
SA14-4225-06
442250
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1314E
Abstract: No abstract text available
Text: IB M 1 1 N 1 6 4 5 L IB M 1 1 N 1 7 3 5 Q 1 M x 6 4 /7 2 D R A M M o d u le Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • Optimized for byte-write, non-parity, or ECC applications. • 1 Mx64, 1Mx72 Extended Data Out Page Mode
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1Mx72
SA14-4630-05
1314E
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014400m
Abstract: No abstract text available
Text: IBM014400M IBM014400P 1M x 4 Low Power DRAM Features • 1,048,576 word by 4 bit organization • Power Supply: 3.3 ± 0.3V or 5.0 ± 0.5V • 1024 Refresh Cycle Rate/128m s Low Power Dissipation - Active max - 85m A/70m A (5.0V) - 95m A/80m A (3.3V) - Standby (TTL Inputs) - 1 ,0mA (max)
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IBM014400M
IBM014400P
Rate/128m
110ns
130ns
J-26/20
300mil)
014400M
014400P
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