IBM025161LG5D60
Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.
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MB81141621
MB81141622
MB81G8322
MB81116421
TC59R1608
2ns500MHz
TC59R0808
IBM025161LG5D60
gm72v16821
MD908
KM48S2020
TC59R1809
GM72V1682
KM4232W259Q60
KM416S1120A
IBM025171LG5D-70
KM44S4020AT
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SIMM 80 jedec
Abstract: No abstract text available
Text: IBM11D1320B1M x 3210/10, 5.0V, Sn/PbMMDS16DSU-001021720. IBM11D2320B2M x 3210/10, 5.0V, Sn/PbMMDS16DSU-001021720. IBM11D1320B IBM11D2320B 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time
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IBM11D1320B1M
Sn/PbMMDS16DSU-001021720.
IBM11D2320B2M
IBM11D1320B
IBM11D2320B
72-Pin
110ns
130ns
SA14-4333-02
SIMM 80 jedec
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Untitled
Abstract: No abstract text available
Text: IBM11D1360E1M 10/10, 5.0V, Sn/PbMMDS25DSU-001021620. x 36 QC10/10, 5.0V, Sn/PbMMDS25DSU-001021620. IBM11E1360E1M x 36 QC10/10, IBM11E2360E2M 5.0V, AuMMDS25DSU-001021620. x 36 QC10/10, 5.0V, Au MMDS25DSU-001021620. IBM11D2360E2M x 36 QC IBM11D1360E IBM11D2360E
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Sn/PbMMDS25DSU-001021620.
IBM11E1360E1M
QC10/10,
AuMMDS25DSU-001021620.
IBM11D1360E1M
IBM11E2360E2M
MMDS25DSU-001021620.
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code edo
Abstract: edo dram 60ns 72-pin simm IBM 1Mx4
Text: IBM11D1475B 10/10, 5.0V, Sn/Pb, 1M xAuMMDS47DSU-021044622. 3210/10, 5.0V, Sn/Pb, AuMMDS47DSU-021044622. IBM11E1475B 2M x 3210/10, IBM11E2475B2M 5.0V, Sn/Pb, x 3210/10, AuMMDS47DSU-021044622. 5.0V, Sn/Pb, AuMMDS47DSU-021044622. IBM11D2475B1M x 32 IBM11D1475B IBM11D2475B
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AuMMDS47DSU-021044622.
IBM11E2475B2M
IBM11D1475B
xAuMMDS47DSU-021044622.
IBM11E1475B
IBM11D2475B1M
IBM11D2475B
code edo
edo dram 60ns 72-pin simm
IBM 1Mx4
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Untitled
Abstract: No abstract text available
Text: IBM11D2320BD2M x 3210/10, 5.0V, Sn/Pb. IBM11E2320BD2M x 3210/10, 5.0V, Au. IBM11D1320B IBM11D2320B 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time
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IBM11D2320BD2M
IBM11E2320BD2M
IBM11D1320B
IBM11D2320B
72-Pin
110ns
130ns
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edo dram 60ns 72-pin simm
Abstract: No abstract text available
Text: IBM11D1325B1M x 3210/10, 5.0V, Sn/PbMMDS16DSU-001045421. IBM11D2325B2M x 3210/10, 5.0V, Sn/PbMMDS16DSU-001045421. IBM11D1325B IBM11D2325B 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Modules • Performance: -60 -70 tRAC RAS Access Time
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IBM11D1325B1M
Sn/PbMMDS16DSU-001045421.
IBM11D2325B2M
IBM11D1325B
IBM11D2325B
72-Pin
104ns
124ns
edo dram 60ns 72-pin simm
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1829pf
Abstract: No abstract text available
Text: IBM11D1360Q1M 10/10, 5.0V, Sn/PbMMDS25DSU-001023221. x 36 QC10/10, 5.0V, Sn/PbMMDS25DSU-001023221. IBM11E1360Q1M x 36 QC10/10, IBM11E2360Q2M 5.0V, Au MMDS25DSU-001023221. x 36 QC10/10, 5.0V, Au MMDS25DSU-001023221. IBM11D2360Q2M x 36 QC IBM11D1360Q IBM11D2360Q
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Sn/PbMMDS25DSU-001023221.
IBM11E1360Q1M
QC10/10,
MMDS25DSU-001023221.
IBM11D1360Q1M
IBM11E2360Q2M
1829pf
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IBM REV 2.8
Abstract: 4620 IBM11M4730C4M
Text: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1735B 1M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx72 Extended Data Out Page Mode DIMM • Performance: -60 -70 RAS Access Time 60ns 70ns CAS Access Time 20ns 25ns
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IBM11M4730C4M
E12/10,
IBM11M1735B
1Mx72
104ns
124ns
IBM REV 2.8
4620
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Untitled
Abstract: No abstract text available
Text: IBM11M1640B1M x 6410/10, 5.0V, AuMMDL19DSU-001015527. IBM11M1640B 1M x 64 DRAM MODULE Features • Optimized for byte-write non-parity applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 1Mx64 Fast Page Mode DIMM
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IBM11M1640B1M
AuMMDL19DSU-001015527.
IBM11M1640B
1Mx64
110ns
130ns
SA14-4605-02
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Untitled
Abstract: No abstract text available
Text: IBM11M2720Q2M x 72 QC10/10, 5.0V, AuMMDL22DSU-001015828. IBM11M2720Q 2M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx72 Dual Bank Fast Page Mode DIMM • Performance: -60 -70 • System Performance Benefits:
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IBM11M2720Q2M
QC10/10,
AuMMDL22DSU-001015828.
IBM11M2720Q
2Mx72
110ns
130ns
SA14-4608-02
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4346-01
Abstract: No abstract text available
Text: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1365E IBM11D2365E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns
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IBM11D2360ED2M
QC10/10,
IBM11E2360ED2M
IBM11D1365E
IBM11D2365E
72-Pin
104ns
124ns
4346-01
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Untitled
Abstract: No abstract text available
Text: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1360Q IBM11D2360Q IBM11E1360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • Single 5V, ± 0.5V Power Supply • All inputs & outputs are fully TTL & CMOS compatible • Low active current dissipation
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IBM11D2360ED2M
QC10/10,
IBM11E2360ED2M
IBM11D1360Q
IBM11D2360Q
IBM11E1360Q
IBM11E2360Q
72-Pin
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IBM11M4730C4M
Abstract: No abstract text available
Text: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1645B 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 RAS Access Time 60ns 70ns CAS Access Time 20ns 25ns
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IBM11M4730C4M
E12/10,
IBM11M1645B
1Mx64
104ns
124ns
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Untitled
Abstract: No abstract text available
Text: IBM11M1730BB1M x 72 E10/10, 3.3V, Au. IBM11M1730B IBM11M1730BB 1M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time
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IBM11M1730BB1M
E10/10,
IBM11M1730B
IBM11M1730BB
1Mx72
110ns
130ns
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Untitled
Abstract: No abstract text available
Text: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1360E IBM11D2360E IBM11E1360E IBM11E2360E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns
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IBM11D2360ED2M
QC10/10,
IBM11E2360ED2M
IBM11D1360E
IBM11D2360E
IBM11E1360E
IBM11E2360E
72-Pin
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Untitled
Abstract: No abstract text available
Text: Discontinued 9/98 - last order; 3/99 last ship IBM11N1645L1M x 64 E10/10, 3.3V, Au, EDOMMDL24DSU-001020631. IBM11N1735Q1M x 72 E10/10, 3.3V, Au, EDOMMDL24DSU-001020631. IBM11N1645L IBM11N1735Q 1M x 64/72 DRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte
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IBM11N1645L1M
E10/10,
EDOMMDL24DSU-001020631.
IBM11N1735Q1M
IBM11N1645L
IBM11N1735Q
1Mx64,
1Mx72
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Untitled
Abstract: No abstract text available
Text: IBM 11D1475B IBM 11E1475B IBM11D2475B IBM11E2475B 1M/2M x 32 Desktop ECC-on-SIMM Features • 72-Pin JED EC Standard Single-ln-Line Memory Module • High Performance C M O S process • Single 5V, ± 0.25V Power Supply • Performance: • All inputs & outputs are fully TTL & C M O S
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11D1475B
11E1475B
IBM11D2475B
IBM11E2475B
72-Pin
IBM11D1475B
QG03fl2Q
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IBM 1Mx4
Abstract: 1MX16
Text: 4. 8/4 Byte DIMM CROSS REFERENCE 8 Byte DIMM TYPE 1Mx64 P a rity Voltage 5V Com pany SEC 3.3V NEC Hitachi SEC 1Mx72 ( P a r ity ) 5V SEC 1 Mx72 (E C C ) 5V IBM SEC 3.3V NEC IBM Hitachi SEC 2M x64 ( P a r ity ) 2M x72 ( P a r ity ) 2M x72 (E C C ) 5V 3.3V
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1Mx64
364C120C
KMM364C124A
C-421000AA64
HB56A164EJ
364V120C
364V124A
372C122C
372C125A
05H0902
IBM 1Mx4
1MX16
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UTC 1316
Abstract: cq 0765 rt 82c386 cq 0765 8088 motherboard schematics CTC 1351 transistor CTC 1351 SCAT-SX CTC 1351 data sheet 82C836
Text: • 82C836 Single-Chip 386sx AT 82C836 The 82C836, also known as SCATsx, is a VLSI device that incorporates most of the motherboard logic required to build a low cost, highly integrated, IBM PC AT compatible computer using the 80386sx. It is designed to be used in
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82C836
386sx
82C836
82C836,
80386sx.
82C45X
82C601
82C765
82C710
UTC 1316
cq 0765 rt
82c386
cq 0765
8088 motherboard schematics
CTC 1351 transistor
CTC 1351
SCAT-SX
CTC 1351 data sheet
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D2320B
Abstract: No abstract text available
Text: IB M 11 D2320B C IB M 11E2320BC 2M x 32 D R A M M odule Features All inputs & outputs are fully TTL & CMOS compatible Fast Page Mode access cycle Refresh Modes: RAS-Only and CBR 1024 refresh cycles distributed across 16ms 10/10 Addressing Row/Column Optimized for use in byte-write non-parity appli
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D2320B
11E2320BC
72-Pin
110ns
130ns
IBM11D2320BC
03H7146
MMDS03DSU-02
11D2320BC
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Untitled
Abstract: No abstract text available
Text: IBM11 D1475B IBM11 E1475B IBM11D2475B IBM11E2475B 1M/2M x 32 Desktop ECC-on-SIMM Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: : -6R : rac RAS Access Tim e ; 60ns : tc A C CAS Access Tim e : 18ns : I U a I rc t|HPC • High Performance CMOS process
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IBM11
D1475B
E1475B
IBM11D2475B
IBM11E2475B
72-Pin
104ns
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 D 1 3 6 0 E IB M 1 1 D 2 3 6 0 E IB M 1 1 E 1 3 6 0 E IB M 1 1 E 2 3 6 0 E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 I : tRAc i RAS Access Time 60ns ; tcAc : CAS Access Time 15ns 70ns I I S 18ns j
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72-Pin
110ns
130ns
IBM11D1360E
IBM11E1360E
IBM11D2360E
IBM11E2360E
SA14-4313
03H7149)
SA14-4309
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IBM 1Mx4
Abstract: No abstract text available
Text: IB M 1 1 D 1 4 8 0 B A IB M 1 1 E 1 4 8 0 B A 1M x 36 ECC-on-SIMM Features Single-error-correct SEC high-speed ECC • 72-Pin JEDEC-Standard Single In-Line Memory Module algorithm • Performance: Single 5V ± 0.25V Power Supply All inputs & outputs are fully TTL & C M O S
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72-Pin
130ns
11D1480BA
MMDS04DSU-01
IBM11D1480BA
IBM11E1480BA
IBM11E1480BA
IBM 1Mx4
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Untitled
Abstract: No abstract text available
Text: IBM11D1360Q IBM11E1360Q IBM11D2360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 : W c ; RAS Access Time 60ns 70ns I tcAC i CAS Access Time 15ns 20ns 30ns 35ns j Iaa !Access Time From Address
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IBM11D1360Q
IBM11E1360Q
IBM11D2360Q
IBM11E2360Q
72-Pin
110ns
130ns
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