schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
|
Original
|
P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
|
PDF
|
11-CQ2
Abstract: 22CF
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
FDMS3668S
FDMS3668S
11-CQ2
22CF
|
PDF
|
ic 22cf
Abstract: No abstract text available
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
FDMS3664S
FDMS3664S
ic 22cf
|
PDF
|
FDMS3660S
Abstract: MO-240 501B
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
FDMS3660S
FDMS3660S
MO-240
501B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
FDMS3664S
FDMS3664S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
|
PDF
|
fdms3660s
Abstract: 501B 8 P
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
FDMS3660S
FDMS3660S
501B 8 P
|
PDF
|
22CF21CD
Abstract: 11-CQ2 22cF
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
FDMS3668S
FDMS3668S
22CF21CD
11-CQ2
22cF
|
PDF
|
1201D
Abstract: No abstract text available
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
|
Original
|
FDMS3664S
FDMS3664S
1201D
|
PDF
|
TCI6630K2L
Abstract: TCI6630 PCIE11 cortex-a15 PCIe Endpoint FFFF00 lte baseband mbps SCR 3 phase mpu5 01D3
Text: TCI6630K2L Multicore DSP+ARM KeyStone II System-on-Chip SoC Data Manual PRODUCT PREVIEW information applies to products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products
|
Original
|
TCI6630K2L
SPRS893
TCI6630K2L
SPRS893--May
TCI663i
TCI6630
PCIE11
cortex-a15
PCIe Endpoint
FFFF00
lte baseband mbps
SCR 3 phase
mpu5
01D3
|
PDF
|
sprugy7
Abstract: pll 022a sprabh0 DDR3 jedec JESD79-3C lte turbo encoder 1GHz PRESCALER RF module that can used with TMS320C6670 "DDR3 SDRAM" 022d 744 312 011
Text: TMS320C6670 Multicore Fixed and Floating-Point System-on-Chip Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. Literature Number: SPRS689
|
Original
|
TMS320C6670
SPRS689
SPRS689--November
TMS320C6670
sprugy7
pll 022a
sprabh0
DDR3 jedec JESD79-3C
lte turbo encoder
1GHz PRESCALER
RF module that can used with TMS320C6670
"DDR3 SDRAM"
022d
744 312 011
|
PDF
|
Search Accelerator
Abstract: No abstract text available
Text: TMS320C6670 Multicore Fixed and Floating-Point System-on-Chip Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not
|
Original
|
TMS320C6670
SPRS689C
TMS320C6670
SPRS689C--October
Search Accelerator
|
PDF
|
|
|
SML-LXR85SIC-TR
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT 3 .2 0 CO. 1 2 6 ] - REV. 2.60 co.ioe: i » El I CATHDDE PA R T N U M B E R REV. SM L-LX R 85S IC -T R B E.C.N. N U M B E R AN D R E V ISIO N C O M M EN TS A E.C.N. # 1 0 B R D R . & # 1 0 7 7 1 . 7 .30 .0 1 B E.C.N. # 1 1 2 4 8 . B .1 2 .0 5
|
OCR Scan
|
SML-LXR85SIC-TR
10BRDR.
SML-LXR85SIC-TR
|
PDF
|
TO-22CFN
Abstract: No abstract text available
Text: T ra n s is to rs T O -2 2 0 • T Q -2 2 0 F P • T O -2 2 0 F N • H R T TD-220FP is a TG-220 w ifi mo« aated fin tar e re« mounting ar>d righer PC. 2W. TO-22CfN is a kw profle by 2mm version c* TO-22CFP wfrcul fin support pin, for higher mounting density. HRT is a taped power transistor package fee uso with an automatic placement machine.
|
OCR Scan
|
O-220
O-220FP
O-220FN
O-220FP
TG-220
O-22CFN
O-22CFP
TO-22CFN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HSM101 THRU SEMICONDUCTOR HSM 106 TECHNICAL DATA FORWARD INTERNAHO'NAL ELECUD'H ICS LTD. TECHNICAL SPECIFICATIONS OF SURFACE MOUNT HIGH EFFICIENCY RECTIFIER VOLTA GE RANGE - 50 to 600 Volts CURREN T- 1.0 Ampere FEATURES * Idea fo r surface m ounted a pp lica tio n s
|
OCR Scan
|
HSM101
IL-STD-202E,
|
PDF
|
d 7377
Abstract: 7377 951K #7377 1N120 ta 7377 2X40 2N2225 22cF
Text: MAZDA 7377 DOUBLE TÉTRODE D ’ÉMISSION AMPLIFICATEUR PUSH-PULL CLASSE C TRIPLEUR DE FRÉQUENCE JUSQU’A 1000 MHz 7377 Le e s t une d ouble té t ro d e d ’ é m is sio n à ch a u ffa g e i n d i r e c t . I l com porte des con n e xio n s c o u rt e s et p ré s e n t e des c a p a c it é s i n
|
OCR Scan
|
3-951K
d 7377
7377
951K
#7377
1N120
ta 7377
2X40
2N2225
22cF
|
PDF
|
thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
|
OCR Scan
|
11PM104
thyristor TAG 8506
nais inverter vf 7f operation manual
922AA1Y-A4P
optek A400 817
Sprague 513D
sprague 926c
Sprague 195P
Rapa relay 12vdc
triac tag 8948
Mascot 719
|
PDF
|
2N7002DM
Abstract: kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252
Text: - p. <11 « P.02 Cover Page P. 29 DC-DC +1.25V P4 478 P.30 DC-DC +2.5V P. 31 Battery P. 32 Charger 1 of 2 P.03 P4 4 78 - PWR & GND (2 of 2) P.04 NB VT8703 - Host, CRT and TV Interface P.05 NB VT8703 - Memory Interface P.06 NB VT8703 - LVDS, (1 of 3) (2 of 3)
|
OCR Scan
|
P4M266
LTC17D9-9
N355V1
33VSB
2N7002DM
kia 1117 3.3
VT8233
g3mx
SMD M05 sot23
H052
W044
kia 1117 1.8
C85C39
c8252
|
PDF
|
RIO R47
Abstract: ic 22cf
Text: | CHEMhCOWI « ¿ « I. f SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS / MVH •Endurance : 105°C 1000 to 2000 hours •Suitable to fit for downsized equipment •Solvent-proof type, see page16 i2 s r - MVL MVJ longer life ♦SPECIFICATIONS Characteristics
|
OCR Scan
|
page16
50Vdc
100pF
1000pF
120Hz
RIO R47
ic 22cf
|
PDF
|
LA4070
Abstract: RM4A N2364 VA114 3005A 8S04
Text: INO„ 2 3 6 4 = ^ m i $ - 3 r - 5147 X V LA4 U ffj& * «•Witg'fe fi*U f U - \ 7^ 3. - I CT L A 2 B 0 0 t ArRiHT 1SK •A^-7>7'I*I«6 V c C= 9 V , R | _ = 8 Q , P o = 0 . 5 W •5 ~J>U-¥ 2 C 1 out = 7 0 m A max) . • K ^ - f A 'r t B s ( 2 0 0 m A X ,
|
OCR Scan
|
I0P9/11
f10OH
LA4070
LA4070
RM4A
N2364
VA114
3005A
8S04
|
PDF
|
Untitled
Abstract: No abstract text available
Text: leluom Semiconductor, Inc. TC1070 TC1071 TC1187 50mA, 100 mA, AND 150 mA ADJUSTABLE CMOS LDOs WITH SHUTDOWN FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC1070, TC1071, and TC1187 are adjustable LDOs designed to supersede a variety of older bipolar voltage regulators. Total supply current is typically 50 p.A at
|
OCR Scan
|
TC1070
TC1071
TC1187
TC1070,
TC1071,
TC1187
TC1070)
TC1071)
TC1187)
|
PDF
|
AMD am2 socket pinout
Abstract: amd AM2 pinout AMD socket AM2 pinout socket AM2 pinout pinout AM2 AMD AM27H010 50raW
Text: ADV MICRO b4E D MEMORY • 02S752Ö 0032QÖ7 böü Bi A M D 1) ti Advanced Micro Devices Am27H010 1 Megabit (131,072 x 8-Bit) High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 45 ns — Typical programming time of 16 seconds
|
OCR Scan
|
Am27H010
28-pin
32-pin
KS000010
12750D-9
Atn27H010
AMD am2 socket pinout
amd AM2 pinout
AMD socket AM2 pinout
socket AM2 pinout
pinout AM2 AMD
50raW
|
PDF
|
