MARKING W2 SOT23 TRANSISTOR
Abstract: ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG
Text: 2SC2712LT1 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA Max. Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.)
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2SC2712LT1
150mA
OT-23
2SA1162
600TYP
6614TYP
99221TYP
1102TYP
MARKING W2 SOT23 TRANSISTOR
ta 8268
sot-23 transistor p2 marking
MARKING W3 SOT23 TRANSISTOR
sot23 Transistor marking p2
3543 amplifier
2SC2712LT1
2SC2712L
MARKING d4 npn sot23
sot-23 Marking LG
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2SC5343 equivalent
Abstract: 2SC5343 equivalent for 2SC5343 transistor 2sc5343
Text: 2SC5343 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 3.5 ±0.2 4.55±0.2 * Excellent hFE Linearity : hFE 2 =100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ)
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2SC5343
150mA
100mA
01-Jun-2002
2SC5343 equivalent
2SC5343
equivalent for 2SC5343
transistor 2sc5343
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2SC5343
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC5343 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). z Low Noise: NF=10dB(Typ). At f=1KHZ.
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2SC5343
150mA
100mA
2SC5343
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5343 transistor
Abstract: transistor 2sc5343 2SC5343 equivalent 2sc5343 2SA1980S TRANSISTOR K 135 J 50 transistor 5343
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC5343 Pb Excellent hFE linearity Lead-free :hFE 2 =100(Typ) at VCE=6V,IC=150Ma :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). z Low noise:NF=1Db(Typ).at f=1KHz. z Complementary pair with 2SA1980S.
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2SC5343
150Ma
2SA1980S.
OT-23
BL/SSSTC022
5343 transistor
transistor 2sc5343
2SC5343 equivalent
2sc5343
2SA1980S
TRANSISTOR K 135 J 50
transistor 5343
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Untitled
Abstract: No abstract text available
Text: 2SC5343 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=10dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2SC5343
150mA
100mA
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2sc5343
Abstract: Transistor 10A 60v
Text: 2SC5343 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=1dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SC5343
OT-23
150mA
100mA
2sc5343
Transistor 10A 60v
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2SD843
Abstract: 2SB753
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB753 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -4A ·High Collector Power Dissipation ·Complement to Type 2SD843
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2SB753
2SD843
-100V
2SD843
2SB753
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Inverter high voltage power transistor
Abstract: 2SB825 2SD1061
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB825 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1061
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2SB825
2SD1061
Inverter high voltage power transistor
2SB825
2SD1061
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2SB1018A
Abstract: 2SD1411A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications.
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2SB1018A
2SD1411A
-100V;
2SB1018A
2SD1411A
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2SB827
Abstract: 2SD1063
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB827 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1063
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2SB827
2SD1063
25itter
2SB827
2SD1063
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2SB828
Abstract: 2SD1064
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB828 DESCRIPTION •High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1064
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2SB828
2SD1064
2SB828
2SD1064
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2SB826
Abstract: 2SD1062
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB826 DESCRIPTION •High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1062
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2SB826
2SD1062
2SB826
2SD1062
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2SD844
Abstract: 2SB754 2SB754 equivalent
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB754 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max) @IC= -4A
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2SB754
2SD844
-50mA;
2SD844
2SB754
2SB754 equivalent
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2SB829
Abstract: 2SD1065
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB829 DESCRIPTION •High Collector Current: IC= -15A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -8A ·Wide Area of Safe Operation ·Complement to Type 2SD1065
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2SB829
2SD1065
2SB829
2SD1065
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Untitled
Abstract: No abstract text available
Text: P a KTA1266L SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA POT EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER APPLICATION FEATURES .Excellent Hfe Linearity :Hfe 2 =80(Typ) atVce=-6V, Ic=-150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mA)=0.95(Typ).
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KTA1266L
-150mA.
toKTC3198L
-100uA
-150mA
-100mA
-10mA
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Untitled
Abstract: No abstract text available
Text: FORWARD INTERNATIONAL ELECTRONICS L ID . KTC3198L SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER APPLICATION Package: TO-92 FEATURES * Excellent Hfe Linearity :Hfe 2 =100(Typ) atVce=6V, Ic= 150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mAH). 95(Typ).
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KTC3198L
150mA.
toKTA1266L
100uA
100uA
150mA
100mA
10VIeF
10VJe
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KTA1266
Abstract: KTA1266 transistor KTA1266 GR KTC3198 KTA1266. transistor
Text: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1266 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e Linearity : hFE 2 =80(Typ.) at VCE=-6V, Ic=-150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.).
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KTA1266
-150mA
KTC3198.
KTA1266
KTA1266 transistor
KTA1266 GR
KTC3198
KTA1266. transistor
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transistor toshiba marking hf
Abstract: 2SA1162 2SC2712
Text: 2SC2712 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2712 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V0EO-5OV, Ic = 150mA (Max.) Excellent hjpg Linearity : hFE (Ic = 0.1mA) / hFE (Ic = 2mA) = 0.95 (Typ.)
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2SC2712
150mA
2SA1162
270Hz
transistor toshiba marking hf
2SA1162
2SC2712
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KTC3198
Abstract: KTA1266
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3198 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I if e Linearity : hFE 2 =100(Typ.) a t V Ce =6V, Ic=150mA. • hFE(Ic-0.1mA)/liFE(Ic-2mA)=0.95(Typ.)
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KTC3198
150mA.
KTA1266
270Hz
KTC3198
KTA1266
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTA1266L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Iif e Linearity : hFE 2 =80(Typ.) at V Ce = -6V, Ic=-150m A • hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.). f=(lkHz).
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-150m
KTA1266L
KTC3198L.
150mA
-100mA,
30MHz
100Hz,
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KTA1266L
Abstract: KTC3198L
Text: SEMICONDUCTOR TECHNICAL DATA KTC3198L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Linearity of Iif e : hFE 2 =100(Typ.) at V Ce =6V, Ic=150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.) at (f=lkHz).
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KTC3198L
150mA
KTA1266L.
150mA
100mA,
30MHz
100Hz
KTA1266L
KTC3198L
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KTA1266L
Abstract: KTC3198L KTA1266L transistor
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1266L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Iife Linearity : hFE 2 =80(Typ.) a t V ce= -6V , Ic=-150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.). f=(lkHz).
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OCR Scan
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KTA1266L
-150mA
KTC3198L.
150mA
-100mA,
-10mA
30MHz
100Hz,
KTA1266L
KTC3198L
KTA1266L transistor
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KTA1266L
Abstract: KTC3198L
Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTC3198L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Linearity of h |.|. : hFE 2 =100(Typ.) at V ce=6V, Ic=150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.) at (f=lkHz).
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OCR Scan
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KTC3198L
150mA
KTA1266L.
150mA
100mA,
30MHz
100Hz
KTA1266L
KTC3198L
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTA1266 e p it a x ia l p la n a r pnp t r a n s i s t o r GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent hFF Linearity : hFF 2 =80(Typ.) at VCe=-6V, Ic=-150mA • hFE(Ic-0.1mA)/hFE(Ic-2mA)=0.95(Typ.).
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OCR Scan
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KTA1266
-150mA
KTC3198.
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