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    IC BM 025 Search Results

    IC BM 025 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
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    IC BM 025 Price and Stock

    congatec AG conga-SBM3 License and Design Kit

    Development Software SMART Battery Manager Module Design Kit for COM Express including license agreement for customer integration, Hardware design files (Schematics, Bill of Material), Battery Manager Firmware (incl. commented source code).
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics conga-SBM3 License and Design Kit
    • 1 $10639.71
    • 10 $10639.71
    • 100 $10639.71
    • 1000 $10639.71
    • 10000 $10639.71
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    IC BM 025 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC1730

    Abstract: 2SC1688 2SC1740A 2SC1673 2SA933LN 045PG 2SC1708 2SC1661 2SC1654 2SC1655
    Text: - 108 - Ta=25sC, *EPÎïTc=25‘ C *± 2SC1653 2SC1654 £ BM BM BW. m 1% VcBO Vc e o Ic(DC) Pc (V) (V) (A) (W) Pci (W) fs. m hF E I.CBO, (max) V'c b (V) (Uh) (min) (Ta-25T!) w t ( (max) ic/ÎE (A) VCE (V) [*EPiÎtyp{g] VcE(sat <,max) (V) (V) le (A) 1e (A)


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    2SC1653 2SC1654 2SC1655 2SC1655A 2SC1656 2SC1657 2SC1658 102C2C1B1E1 2SC1731 2SC1732 2SC1730 2SC1688 2SC1740A 2SC1673 2SA933LN 045PG 2SC1708 2SC1661 PDF

    Untitled

    Abstract: No abstract text available
    Text: 53E D FUJITSU MIC ROEL EC TR ON IC S • 37417bE 0000305 1 M BM 10480-15 M BM 10480-25 F U J IT S U September 1984 Edition 3.0 T ^ fc -Z i-O S 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY T he Fujitsu M B M 1 0 4 8 0 is fully decoded 16384-bit E C L read/write random


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    37417bE 16384-BIT 20PLC PDF

    Untitled

    Abstract: No abstract text available
    Text: NEU ENGLAND SEMICONDUCTOR I STE D bS bM 'ì'ìB OOOOOSE b b l « N E S -T > Ic max = 0 .0 5 to 5A V ceo(sus) = 4 0 -4 5 0 V fi = 3 to 6 0 MHz 33 " PNP TÜ -39/TQ -5 Case 801 Type No. 2N3743 NPN Comple­ ment 2N3742 VCEO (SUS) 00 IC (MAX) (A) 300 VCE (SAT)


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    -39/TQ-5 2N3743 2N3742 0003b@ 2N3867 2N3868 2N5477 2N5478 2N5479 2N5480 PDF

    2SD1617

    Abstract: 2sb111 2SB1116 2SB1116A 2SB1119 2SB1120 2SB1121 2SB1122 2SB1123 2SB1124
    Text: - 76 - Ta=25^,*03{ÎTc=25t ít S Veso Vc e o (V) (V) IC(DC) (A) Pc* (W) (W) 2SB11Í5A a n L F PA -80 2SB1116 BU LF PA/ MS S W -60 - 50 -1 2SB1116A s LF PA/ MS SW - 80 -60 -1 2SB1U7 BM LF PA/ MS SW -30 -25 -3 1 2SB1U8 H # L F PA -20 -15 -0. 7 0. 5 n -60


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    2SB1116 2SB1116A 2SB1119 T0126ML) 2SB1141 2SD1682 2SB1142 2SD1683 2SD1617 2sb111 2SB1119 2SB1120 2SB1121 2SB1122 2SB1123 2SB1124 PDF

    100480

    Abstract: No abstract text available
    Text: FU JITSU ECL 16384-BIT BIPOLAR RANDOM A CC ESS MEMORY M BM 100480-15 MBM 100480-25 S u p ie m b e r 1 9 8 4 E d i t i o n 3 .0 16384-BIT BIPO LA R ECL R A N D O M A C C ESS M E M O R Y The Fujitsu MBM 100480 is fully decoded 16384-bit ECL read/write random


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    16384-BIT 20-PAD LCC-20C-F01) 100480 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS F U J IT S U 23E D • 374T7t2 OOOölöi 3 ■ E C 4 Ö 9 0 & B J B IP O L A R R A N D O I ACCESSMEMOR 4096-B IT BIPOLAR ECL RANDO M ACCESS M EM O RY The Fujitsu M B M 1 0 4 7 0 A is fu lly decoded 4 0 9 6 -b it E C L read /w rite random


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    374T7t2 4096-B 37417L2 T-46-23-05 0470A-10 70A-15 0470A-20 PDF

    27C256A-20

    Abstract: 27C256A-25 MBM27C256A-20 BM27C256A 27C256A20 MBM27C256A-15 Fujitsu 27C256A
    Text: CM O S UV ERASABLE 262144-BIT READ ONLY MEMORY FU JITSU MBM27C256A-15 MBM27C256A-17 MBM 27C256A-20 MBM27C256A-25 September 1987 Edition 2.0 C M O S 262144 BIT U V E R A S A B L E A N D E L E C T R IC A L L Y P R O G R A M M A B L E R E A D O N LY M E M O R Y


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    262144-BIT MBM27C256A-15 MBM27C256A-17 27C256A-20 MBM27C256A-25 28-pin 32-pad DIP-28C-C01) 27C256A-25 MBM27C256A-20 BM27C256A 27C256A20 Fujitsu 27C256A PDF

    Untitled

    Abstract: No abstract text available
    Text: C O N N E C T O R P IN S 460 3231 - Swage Mount • .025 0,64mm Diameter Pin HO W TO ORDER CODE: 460 - 3^31- XX - XjC- 00 ACTUAL SIZE Finish Basic P art No. B A S IC L PA R T No. -01 .051 (1,30) COMPONENT Pin MATERIAL Brass FINISH G old o ve r Nickel o r Tin over Copper


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC ALL RIGHTS RESERVED. REVISIONS DIST AJ 6 LTR DESCRIPTION B PER EC O S 1 4 —0 1 8 4 —0 4 DATE DWN APVD 06JA N 05 BM JL D SHELL .0 0 8 025 TYP CONTACT


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    QQ-B-750 QQ-Z-363. 290CT99 31MAR2000 PDF

    AN6367

    Abstract: AN6367NS N-6367 maxim 5678 AN6367NK ossilloscope an6163 3X319
    Text: AN6367NK, AN6367NS t i -r'TtffllC AN6367NK, AN6367NS VTR Color Signal Processing Circuits for 3 Systems , ih w n ts c , iiiasECAM co3*is;M £iir^^* 9 • Unit : mm AN6367NK :V CC = 5V • AFC+APCA^ APC ONLY* 5?;


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    AN6367NK, AN6367NS AN6367NK AN6367NSi± AN6163AtcoiIA 22-Lead AN6367NS AN6367 N-6367 maxim 5678 ossilloscope an6163 3X319 PDF

    27C1000 eprom

    Abstract: 27C1000 MBM27C1000-20 Fujitsu MBM27C1000 MBM27C1000 27c1000a MBM27C1001-15 MBM27C1000-15 MBM27C1000-25
    Text: FU JITSU CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM MBM27C1000-15 MBM27C1000-20 MBM27C1000-25 A p ril 1988 Edition 2.0 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY (EPROM) T he Fujitsu M BM 27C1000 EPROM Is a high spee d re a d -o n ly s ta tic m e m o ry th a t is


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    MBM27C1000-15 MBM27C1000-20 MBM27C1000-25 27C1000 32-LEAD 27C1000 eprom Fujitsu MBM27C1000 MBM27C1000 27c1000a MBM27C1001-15 MBM27C1000-25 PDF

    mbm27c128

    Abstract: CERAMIC LEADLESS CHIP CARRIER LCC 32 socket 27C128-25-X BM TVS M27C128
    Text: FU JITSU CMOS UV ERASABLE 131072-BIT READ ONLY MEMORY TS119-A886 June 1988 CMOS 131072 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C128 is a high speed 131,072 bit static complementary MOS erasable and electrically reprogrammable read only memory EPROM .


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    131072-BIT TS119-A886 27C128 28-pin 32-Pad 27C128. A950S4-3197, 0V2154-872C2 mbm27c128 CERAMIC LEADLESS CHIP CARRIER LCC 32 socket 27C128-25-X BM TVS M27C128 PDF

    SRT9

    Abstract: osam marking code 4258A MT43C MT43C425
    Text: PRELIMINARY l^ iic n o N 256K X MT43C 4257A/8A 4 T R IP LE -P O R T DRAM FEATURES • • • • • • • • • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 70ns random, 22ns serial Operation and control compatible w ith 1 Meg VRAM


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    MT43C 257A/8A 512-cycle 048-bit T43C4257A/8A MT43C4257A/8A SRT9 osam marking code 4258A MT43C425 PDF

    IR TK 19 544

    Abstract: No abstract text available
    Text: . , D Right Angle D 7fiE • M77ELST DD0?4fi b 1Ö7 D*M M achined Contacts p erfo rm an ce and M a te ria l Specifications 9 PER FO R M A N CE SPECIFICATIONS M ATERIALS AND FINISHES W ire Accom m odation AWG Description Material Finish Shell Steel per ASTM A -620


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    M77ELST IR TK 19 544 PDF

    Untitled

    Abstract: No abstract text available
    Text: DO NOT METRIC SCALE D IM E N 5 I0 N 5 IN mm NOTES: A A A A A A A A R6-129 PLATING CONTACT AREA: 0, 8pm Au MIN. OVER 1, 3pm Ni MIN. ACTION P I N : 0,5pm SnPb MIN. OVER 7,3pm N» HIN. P L A T I N G C O N T A C T AREA: 1, 3pm Au MIN. O V E R 1 , 3pm Ni ACTION P I N s 0 ,5pm SnPb M IN . OVER 1,3pm Ni M IN.


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    R6-129 30-JUN-94 50EST C-188232 PDF

    bU1011

    Abstract: 026R ca2dc CY7C09569V
    Text: CY7C09569V CY7C09579V PREUM INAm 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM 3.3V Low operating power Features • True Dual-Ported mem ory cells which allow sim ulta­ neous access of the same mem ory location • 2 Flow-Through/Pipelined devices


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    CY7C09569V CY7C09579V 16K/32K FLEx36TM CY7C09569V) CY7C09579V) 25-micron 100-MHz bU1011 026R ca2dc PDF

    VARIABLE POWER SUPPLY. 0 - 30V

    Abstract: No abstract text available
    Text: RF RF2302 MICRO DEVICES BROADBAND LINEAR VARIABLE GAIN AM PLIFIER T y p ic a l A p p lic a tio n s • CDMA Cellular/PCS and JCDMA Systems • Wireless Local Loop Systems • TDMA Cellular/PCS Systems • Wideband CDMA Systems • GSM Systems • PDC Systems 950MHz and 1450MHz


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    RF2302 950MHz 1450MHz) RF2302 100MHz 2000MHz, 8808E VARIABLE POWER SUPPLY. 0 - 30V PDF

    RH1034-1.2

    Abstract: No abstract text available
    Text: A im Aerospace/Ruggedized Printed Circuit Board Connectors Catalog 296350 Issued 9-97 .100 [2.54] Centerline Connectors per MIL-C-55032 AMPMODU Right-Angle Receptacle Assemblies Product Facts • Qualified to MIL-C-55302 ■ Mates with .025 x .025 [0.64 x 0.64] posts


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    MIL-C-55032 MIL-C-55302 M55302/127-00KY, RH1034-1.2 PDF

    mbl80168

    Abstract: 27S01 AD1-AD15 MBM27C1028-15 MBM27C1028-20 MBM27C1028-25
    Text: FU JITSU CMOS 1 ,0 4 8 ,5 7 6 BIT UV ERASABLE READ ONLY MEMORY CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM MBM27C1028-15 MBM27C1028-20 MBM27C1028-25 S e p te m b e r 1988 Edition 1.0 The Fujitsu M BM 27C1028 EPROM Is a high speed re a d -o n ly s ta tic m e m o ry th a t is


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    MBM27C1028 072-byte/S 536-word/16-blt 28-pln 32-pad LCC-32C-F01) 20ITYP 32PLCS) mbl80168 27S01 AD1-AD15 MBM27C1028-15 MBM27C1028-20 MBM27C1028-25 PDF

    MIL-M-24519

    Abstract: No abstract text available
    Text: r 7 8 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AJ REVISIONS DIST 16 LTR DESCRIPTION B .025 TYP 1 .375 + . 0 2 5 PBT, DATE REVISED PER EC 0S1 4 - 0 1 5 0 - 0 5 1A POLYESTER,


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    07SEP05 MIL-M-24519 1\-/6V10V1 21APR2005 31MAR2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MICRON 256K X MT 43C4257A/8A 4 TRIPLE-PORT DRAM FEATURES • • • • • • • • • • • PIN ASSIGNMENT Top View 40-Pin SOJ (SDB-3) SCb 1 40 Vss 39 SDOb4 3 38 SD Qb3 4 37 SËb 5 36 MKD 6 35 SD Qa4 SD Q a2 C 7 34 SD Qa3 8 33 SËa 9


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    43C4257A/8A 40-Pin MT43C4257A/8A PDF

    L3AP

    Abstract: CL 2183 ic DSP-2183
    Text: ANALOG DEVICES DSP Microcomputer ADSP-2183 FUNCTIONAL BLOCK DIAGRAM FEATURES PERFORMANCE 25 ns Instruction Cycle Tim e from 20.00 M Hz Crystal @ 3.3 Volts 33 MIPS Sustained Performance Single-Cycle Instruction Execution Single-Cycle C ontext Switch 3-Bus Architecture Allow s Dual Operand Fetches in


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    ADSP-2100 SP-2183K ST-115 -2183B ST-133 SP-2183B ST-160x L3AP CL 2183 ic DSP-2183 PDF

    sama logic

    Abstract: I-7017
    Text: |v i i c : r o n 256K TRIPLE PORT DRAM MT43C4257/8 X 4 TP D R A M 256K X 4 DRAM WITH DUAL 512x4 SAMS FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View 40-Pin SOJ (Q-6) Vss 39 SO Ob4 38 SDOÒ3 37 SË b SCa [ 5 36 M KD SDOal [ 6 35 SD Q a4


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    MT43C4257/8 500mW 512-cycle 048-bit 512x4 40-Pin T43C4257/8 sama logic I-7017 PDF

    MBM10470

    Abstract: MBM10470A
    Text: FU JITSU ECL 4096-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10470A-7 August 1988 Edition 1.0 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10470A is a fully decoded 4096-blt ECL read/write random access memory designed for high-speed scratch pad. control and buffer storage applications.


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    4096-BIT MBM10470A-7 MBM10470A 4096-blt 30ITYP 008I0 02ITYP 150I3 MBM10470 PDF