YTS2222A
Abstract: transistor marking 1p Z
Text: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage
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500mA
YTS2222A
300MHz
YTS2907A.
500mA,
Ta-25
150mA,
YTS2222A
transistor marking 1p Z
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PDF
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MM4048
Abstract: BC406 L17D D29A10 D29A12 D29A7 D29A8 D29A9 MA7809 SA2255
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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/AT-10uV/deg
SA2720*
SA2721
SA2722*
SA2723*
SA2724*
/AT-10uV/dea
MM4048
BC406
L17D
D29A10
D29A12
D29A7
D29A8
D29A9
MA7809
SA2255
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PDF
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TIL78
Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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TIL78
Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
TIL78
SA2739
phototransistor OCP71
cm601
JAN2N491
photo transistor til78
til78 phototransistor
CM602
FPN100
ft06
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2N4241
Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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NPN110.
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
2N4241
OC74
CM601
2N4042
BSV39
2N3523
bc143
BC222 TRANSISTOR
ft06
200S
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TIL78
Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
TIL78
photo transistor til78
K1202
phototransistor OCP71
photo TIL78
til78 phototransistor
2n318
2SK19GR
2SK19Y
C682A
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PDF
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51t35
Abstract: J3E diode 5N 2MBI150LB-060 M221 J3E diode
Text: 2MBI1 50LB-060 15 oa IGBT ‘ Outline Drawings IGBT MODULE • Features • S & X 'f High Speed Switching • i&fS*n$t/± Low Saturation Voltage • B A f i t f — H & it(M O S - y — hfllia) • High Input Impedance Module Packaging •Applications = A
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50LB-060
51t35
J3E diode 5N
2MBI150LB-060
M221
J3E diode
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PDF
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KN2222S
Abstract: KN2222AS
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN2222S/AS EPITAXIAL PLANAR NPN TRA N SISTO R GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM : I c E x - 1 0 n A M a x . A B ; V c e = 6 0 V , V e b (o f f ) - 3 V .
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KN2222S/AS
150mA,
KN2907S/2907AS.
KN2222S
KN2222AS
10x8x0
KN2222AS
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TA550c
Abstract: 2N4033 2N3019 and applications TA-550C 2N5020 2N3019 2N3020 2N4031 550C
Text: 2N3019 2N 3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES ' * •\ • * ’ * V •’ , ¿: u \ r> r 1 ¿ 7 . j * * V / • •' ¿ r . .* i f ^ C M i ? > % - ' l,- - • , • • . i * Í ;•: i Í ■ sir4 : 1 1' ; : ; > * ?• K v y i : r ^ V ; y . ‘£
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2N3019
2N3020
2N3019,
2N5020
2N4033,
2N4031.
IC-150mA
150mA
VCE-10V
500mA
TA550c
2N4033
2N3019 and applications
TA-550C
2N4031
550C
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2SB1025
Abstract: 2SB1026 2SD1419 2sb102
Text: HITACHI 2SB1026 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1419 1. » a * 2. Coiiicior 3. limmer 4. Collector Flange "I (DiiMiiMom» in mill) (UPAK) MAXIMUM COLLECTOR DISSIPATION CURVE • A SSO LU T E MAXIMUM RATINGS (Ta=25°C)
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2SB1026
2SD1419
2SBI026
-100V,
Ic--150mA
-500mA
-500mA,
-50mA,
-l50mA
-150inA
2SB1025
2SB1026
2SD1419
2sb102
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MA7809
Abstract: 2S711 SA2713 L17D STL51 BC412 KIS434 NS435 NS436 NS437
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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/AT-10uV/deg
SA2720*
SA2721
SA2722*
SA2723*
SA2724*
/AT-10uV/dea
MA7809
2S711
SA2713
L17D
STL51
BC412
KIS434
NS435
NS436
NS437
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PDF
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BC138 TRANSISTOR
Abstract: 2N4043 ME2001 2N1020 2N3523 2N4042 2N4241 BC138 bc143 TLO 61
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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TIL78
Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
BVCBO-15V;
TIL78
photo transistor til 78
photo transistor til78
sk 110 19 20n
2sc640 transistor
2SC286
2SC287
2SC430
400M
PMT222
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PDF
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TIL78
Abstract: photo transistor til78 TIL78 em
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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transistor KN2222A
Abstract: kn2222a KN2222 Kn2222A transistor 2907A
Text: SEMICONDUCTOR TECHNICAL DATA KN2222/A EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA M ax. ; V ce-60V , V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.
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KN2222/A
150mA,
KN2907/2907A.
KN2222
KN2222A
transistor KN2222A
kn2222a
Kn2222A transistor
2907A
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR SW ITCHING TRANSISTOR FZT2222A ISSUE 3 - OCTOBER 1995 FEATURES * * 40 Volt V CE0 Fast switching C O M P L E M E N T A R Y TYPE P A R T M A R K IN G D ET A IL - FZT2907A FZT2222A ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L
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OT223
FZT2907A
FZT2222A
100MHz
140KBz
150mA,
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PDF
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BC138 TRANSISTOR
Abstract: 2N4241 BD117 2N4042 BC138 transistor bc138 BC222 TRANSISTOR 2N4043 2N5508 2N5511
Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12
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diff40V
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
BC138 TRANSISTOR
2N4241
BD117
2N4042
BC138
transistor bc138
BC222 TRANSISTOR
2N4043
2N5508
2N5511
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PDF
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2N2906A
Abstract: 2N2221 2N2221A 2N2906 PN2221 PN2221A PN2906 PN2906A
Text: 2N PN 2906 2N2906A PN2906A í PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES CASE TO-18 CASE TO-92A CBE EBC 2N2906 2N2906A PN2906 PN2906A THE 2N2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM
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2N2Q06,
2N2906A,
PN2906,
PN2906A
2N2221,
2N2221A,
PN2221,
PN2221A
2N2906,
2N2906A
2N2221
2N2221A
2N2906
PN2221
PN2906
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2n4401- 38
Abstract: 2N4401 EBC 2N4401 2N4400 2N4402 2N4403
Text: CASE T0-92A THE 2N4400, 2N4401 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N4402 AND 2N4405 RESPECTIVELY. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage
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2N4401
2N4400,
2N4402
2N4403
T0-92A
310mW
2N4400
150mA
2n4401- 38
2N4401 EBC
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PDF
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MA7809
Abstract: 2sc395 transistor L17D STE401
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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PDF
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NS662
Abstract: L17D RT3500
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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PDF
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SA2713
Abstract: MA7809 MEM808 transistor k1502 RN1030A UC320 RN3020 L17D ML111B ML132A
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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OCR Scan
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NPN110.
/AT-10uV/deg
SA2720*
SA2721
SA2722*
SA2723*
SA2724*
/AT-10uV/dea
SA2713
MA7809
MEM808
transistor k1502
RN1030A
UC320
RN3020
L17D
ML111B
ML132A
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PDF
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L17D
Abstract: MA7809
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS J Q Q J HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. Unit in mm ELECTRICAL CHARACTERISTICS (Ta«25°C) CHARACTERISTIC TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector Cut-off Current
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OCR Scan
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VCB-200V,
VCE-10V,
Ic-150mA
Ic-200mA,
-20mA
VCB-10V,
2SC3963
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