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    STAP85050

    Abstract: No abstract text available
    Text: STAP85050 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 70 W with 15.4 dB gain @ 520 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PDF STAP85050 2002/95/EC PowerSO-10RF STAP85050 ID15507

    STAP85050

    Abstract: No abstract text available
    Text: STAP85050 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Target specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 70 W with 15.4 dB gain @ 520 MHz / 13.6 V ■ Plastic package


    Original     		PDF STAP85050 2002/95/EC STAP85050 ID15507