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    ID25A Search Results

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    ID25A Price and Stock

    Carlo Gavazzi Holding AG ID25ANC05PO-K

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    Mouser Electronics ID25ANC05PO-K
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    Newark ID25ANC05PO-K Bulk 5
    • 1 $170.39
    • 10 $162.23
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    Onlinecomponents.com ID25ANC05PO-K
    • 1 $149.89
    • 10 $134.22
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    Carlo Gavazzi Holding AG ID25ANC05NO-K

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    Mouser Electronics ID25ANC05NO-K
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    Newark ID25ANC05NO-K Bulk 5
    • 1 $170.39
    • 10 $162.23
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    Onlinecomponents.com ID25ANC05NO-K
    • 1 $149.89
    • 10 $134.22
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    Carlo Gavazzi Holding AG ID25ANC05PA-K

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    Mouser Electronics ID25ANC05PA-K
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    Newark ID25ANC05PA-K Bulk 5
    • 1 $181.82
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    Onlinecomponents.com ID25ANC05PA-K
    • 1 $160.2
    • 10 $143.45
    • 100 $127.84
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    Carlo Gavazzi Holding AG ID25ANC05NA-K

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    Mouser Electronics ID25ANC05NA-K
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    Newark ID25ANC05NA-K Bulk 5
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    Onlinecomponents.com ID25ANC05NA-K
    • 1 $160.2
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    Festo MHP1-PR10-3-PI-D25 (ALTERNATE: 197236)

    Manifold Block, for MHP1 PI, 10 valve posit, plug bases & multi-pin e-con | Festo MHP1-PR10-3-PI-D25
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    RS MHP1-PR10-3-PI-D25 (ALTERNATE: 197236) Bulk 1
    • 1 $207.37
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    ID25A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ID25ANC05NA-K Carlo Gavazzi Rectangular, Nickel-plated Brass Housing - Proximity Sensors Inductive Original PDF
    ID25ANC05NO-K Carlo Gavazzi Rectangular, Nickel-plated Brass Housing - Proximity Sensors Inductive Original PDF
    ID25ANC05PA-K Carlo Gavazzi Rectangular, Nickel-plated Brass Housing - Proximity Sensors Inductive Original PDF
    ID25ANC05PO-K Carlo Gavazzi Rectangular, Nickel-plated Brass Housing - Proximity Sensors Inductive Original PDF

    ID25A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10035JLL 1000V R POWER MOS 7 0.350Ω 25A MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT10035JLL OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10035JLL 1000V POWER MOS 7 R 0.350Ω 25A MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT10035JLL OT-227 PDF

    2SK2753-01

    Abstract: No abstract text available
    Text: 2SK2753-01 N-channel MOS-FET FAP-IIS Series 120V > Features - 32mΩ ±50A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original
    2SK2753-01 2SK2753-01 PDF

    carlogavazzi

    Abstract: K7M-DR20U K7M-DR60u K7M-DR40U K7M-DR30U K7M-DRT40U koyo PLC module PMU LG PMU-830TT PMU-300BT
    Text: Overview2004CA.qk 12/16/04 11:29 AM Page 1 Gross Automation 877 268-3700 • www.carlogavazzisales.com · sales@grossautomation.com Overview2004CA.qk 12/16/04 11:29 AM Page 2 CARLO GAVAZZI – A Global Force In Offering the Complete Package CARLO GAVAZZI offers a vast array of high quality products, which provide you the optimum solutions to your


    Original
    Overview2004CA yo1500 GH64404412 G81104406 G82104406 G85101101 G85102201 G85103301 G34485234 carlogavazzi K7M-DR20U K7M-DR60u K7M-DR40U K7M-DR30U K7M-DRT40U koyo PLC module PMU LG PMU-830TT PMU-300BT PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2753-01 N-channel MOS-FET FAP-IIS Series 120V > Features - 32mΩ ±50A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    Original
    2SK2753-01 PDF

    APT10035JLL

    Abstract: DSA003678
    Text: APT10035JLL 1000V R POWER MOS 7 0.350Ω 25A MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT10035JLL OT-227 APT10035JLL DSA003678 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT CÂTÂlûi Æ iition N-CHANNEL ENHANCEMENT MOS FET 400V, 2 5 A , 0.21Q SDF360 SDF360 SDF360 SDF360 RGS=1.0Mn (1 ) RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE


    OCR Scan
    SDF360 MIL-S-19500 di/dt-100A/ 300cS. 03b0fc PDF

    Untitled

    Abstract: No abstract text available
    Text: SOLITRON DEVICES INC 48E D • CATALOm PRODUCT fl3bflb02 00G353b SSO « S O D _ J fO lltr a n devices. inc. N-CHANNEL ENHANCEMENT MOS FET 100V, 25A, o. ion 5DF140 SDF140 SDF140 JAA JAB JDA FEATURES • • • • • • • • RUGGED PACKAGE


    OCR Scan
    fl3bflb02 00G353b 5DF140 SDF140 MIL-S-19500 IF-25A. IF-25A 300nS. PDF

    Untitled

    Abstract: No abstract text available
    Text: Æiitwan PRODUCT DEVICES,INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH. FLORIDA 33404 TEL: 407 848-4311 » TLX: 51-3435 • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 4 0 0 V, SYMBOL UN ITS VDSS 400 Vdc VDGR 400 Vdc


    OCR Scan
    F100NA40 PDF