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    static ram 64K

    Abstract: S126-2
    Text: ADVANCE INFORMATION IDT 10497 IDT 100497 HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT WITH SYNCHRONOUS WRITE FEATURES: DESCRIPTION: • 16,384-w ords x 4-bit o rga n izatio n • A ddress a ccess tim e: 12/15ns (max.) • Low p o w e r d issip a tion : 800m W (typ.)


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    384-w 12/15ns IDT10497 T100497 536-bit 0000000v S12-61 IDT100497 C28-2 400mil) static ram 64K S126-2 PDF

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    Abstract: No abstract text available
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT with SYNCHRONOUS WRITE FEATURES: • • • • • • 16,384-words x 4-bit organization Address access time: 12/15 ns Read Data output latch for extended hold time Short Write Cycle input data and address valid time


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    384-words IDT10497 IDT100497 IDT101497 IDT10497, IDT101497 536-bit IDT100497, PDF

    Untitled

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT with SYNCHRONOUS WRITE FEATURES: • • • • • • 16,384-words x 4-bit organization Address access time: 12/15 ns Read Data output latch for extended hold time Short Write Cycle input data and address valid time


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    IDT10497 IDT100497 IDT101497 384-words IDT10497, IDT101497 536-bit IDT100497, PDF