A12L

Abstract: A13L A14L IDT70V07 IDT70V07L IDT70V07S
Contextual Info: PRELIMINARY IDT70V07S/L HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.

Contextual Info: IDT70V07S/L HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max. • Low-power operation

Contextual Info: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V07S/L F e a tu re s True Dual-Ported memory cells which allow simultaneous access of the same memory location ♦ High-speed access ♦ - ♦ Commercial: 25/35/55ns max. Low-power operation -

GNDBH 02

Contextual Info: U t Integrated Device Technology, Inc. HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V07S/L FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.)

A12L

Abstract: A13L A14L IDT70V07 IDT70V07L IDT70V07S A14R-A0R
Contextual Info: PRELIMINARY IDT70V07S/L HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. • On-chip port arbitration logic • Full on-chip hardware support of semaphore signaling between ports • Fully asynchronous operation from either port

marking 2943

Abstract: A12L A13L A14L IDT70V07 IDT70V07L IDT70V07S MARKING A14L
Contextual Info: IDT70V07S/L HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous access of the same memory location • High-speed access — Commercial: 25/35/55ns max. • Low-power operation

Contextual Info: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V07S/L Integrated Device Technology, Inc. FEATURES: • True D ual-Ported m em ory cells which allow simulta­ neous reads of the sa m e m em ory location • High-speed access — Com m ercial: 25 /3 5 /5 5 n s m ax.

Contextual Info: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V07S/L I n te g r a te d D e v i z e T e c h n o lo g y , l i e . FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access

A12L

Abstract: A13L A14L IDT70V07 IDT70V07L IDT70V07S
Contextual Info: PRELIMINARY IDT70V07S/L HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. • On-chip port arbitration logic • Full on-chip hardware support of semaphore signaling between ports • Fully asynchronous operation from either port

A12L

Abstract: A13L A14L IDT70V07 IDT70V07L IDT70V07S
Contextual Info: PRELIMINARY IDT70V07S/L HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation

Contextual Info: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V07S/L Integrated Device Technology, Inc. FEATURES: • • • • • • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location High-speed access — Commercial: 25/35/55ns max.

A12L

Abstract: A13L A14L IDT70V07 IDT70V07L IDT70V07S
Contextual Info: PRELIMINARY IDT70V07S/L HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation

Contextual Info: bflE D • HÖ25771 G 0 1 4 3 3 Û EQfi m i D T I N T E G R A T E D E V I C E _ HIGH-SPEED 3.3V 32K X 8 DUAL-PORT STATIC RAM 1df PRELIMINARY IDT70V07S/L Integrated Di svtce Technology, Inc FEATURES: • • • True D ual-P orted m em ory cells which allow sim ulta­

4900GC

Abstract: IDT72V36110L7-5PFG IDT72V36110L7-5PFGI IDT70261L20PFGI IDT7025S25PFG8 IDT70V06L20PFGI8 IDT7133SA35PF8 IDT70V28L20PFGI IDT72V255LA15PFGI IDT72285L10PFG
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A0811-02 DATE: 9-Jan-2009 Product Affected: TQFP 64, TQFP 80, TQFP 100, TQFP 128, (Standard and RoHS) Refer to Attachment II for the affected part numbers

l 0706

Abstract: cmos 4004 dual port dual port ram IDT7007 IDT7016 IDT7052 IDT77015 idt7m1002
Contextual Info: Integrated Device Technology, Inc. Dear Dual-Port Designer, Thank you for your interest in IDT’s cost-effective dual-port memories. As the leading supplier of multi-port memories, IDT offers a wide variety of elegant yet inexpensive products ideally suited for shared memory designs. And now, thanks to innovative CMOS technology advancements, IDT is offering dual-ports at the lowest cost ever. So if you’ve always

Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 8/21/00 PCN #: SM 0008-04 DATE: Product Affected: 256K & 512K Dual Port Family (refer to attached list for product details) Manufacturing Location Affected:

IDT70V28L20PFGI

Abstract: IDT72V36110L7-5PFG idt5t93gl161pfi IDT7024L35PFI IDT7024L15PFGI IDT71321LA20PFG IDT71V321L55TFG IDT72V36110L15PFG IDT70V22L20PF IDT70V25L25PFGI
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A0603-04 Product Affected: Date Effective: Contact: Title: Phone #: Fax #: E-mail: DATE: 5/8/2006 TQFP and PQFP Products (See attached affected part # list)

IDT82V1671AJ

Abstract: EME-G700 G700LX EME-G770 Ablebond 8361 JESD22-B116 IDT7025S35JI ablestik 8390 CRM1076 JESD22-B100-b
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0601-01 Product Affected: Date Effective: Contact: Title: Phone #: Fax #: E-mail: DATE: 21-Mar-2006 MEANS OF DISTINGUISHING CHANGED DEVICES:

Contextual Info: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25/35ns (max.) Low-power operation

A12L

Abstract: A13L A14L IDT70V07 IDT70V07L IDT70V07S
Contextual Info: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industral: 25ns (max.) Low-power operation

3.3v to 5v buffer latch

Abstract: 74FCT163244 74FCT3245 R3052 R3000A OPTi viper MIPS R3000A 128K x 16-bit VIPER 22 R3051
Contextual Info: Integrated Device Technology, Inc. High-Performance 3.3V Product Selector Guide Integrated Device Technology, Inc. IDT recognizes that there is an increasing demand for low-voltage products. As such, IDT is committed to offering 3.3V products from all product families, including FCT Logic, FIFO, RISC

philips diode PH 33J

Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without

Contextual Info: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industral: 25ns (max.) Low-power operation

A12L

Abstract: A13L A14L IDT70V07 IDT70V07L IDT70V07S
Contextual Info: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industral: 25ns (max.) Low-power operation