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    IE 420 SMD Search Results

    IE 420 SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    IE 420 SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCW81

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW81 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW81 = K3


    Original     		PDF OT-23 BCW81 C-120 BCW81

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW81 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW81 = K3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF OT-23 BCW81 C-120

    BCW31

    Abstract: BCW32 BCW33
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking


    Original     		PDF OT-23 BCW31 BCW32 BCW33 BCW31 BCW32 BCW33

    BCW32

    Abstract: BCW31 BCW33
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 BCW31 BCW32 BCW33 BCW31 BCW32 BCW33

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 BCW31 BCW32 BCW33 BCW31 BCW32

    Untitled

    Abstract: No abstract text available
    Text: SMB3W-420/525/640-I TECHNICAL DATA High Power LED, SMD InGaN / GaInAsP SMB3W-420/525/640-I are multi chip High Power LEDs, isolated mounted on a cooper heat sink with a 5x5 mm SMD package and molded with silicone resin. On forward bias, it emits a radiation


    Original     		PDF SMB3W-420/525/640-I SMB3W-420/525/640-I 420nm, 525nm

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4377 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1


    Original     		PDF KTC4377 OT-89 500mW 500mA

    Untitled

    Abstract: No abstract text available
    Text: Transistors Diodes IC Transistor T SMD Type Product specification KTC4377 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1


    Original     		PDF KTC4377 OT-89 500mW 500mA

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW81 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BCW81 = K3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3


    Original     		PDF OT-23 BCW81 C-120

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN general purpose double transistor BCV61 • Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF BCV61 BCV61A BCV61C BCV61B

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF BCV62 BCV62A BCV62C BCV62B BCV61 BCV61A BCV61B BCV61C

    MARKING k3 SOT-23

    Abstract: BCW81
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW81 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW81 = K3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3


    Original     		PDF OT-23 BCW81 C-120 MARKING k3 SOT-23 BCW81

    bcf81

    Abstract: transistor smd marking NA sot-23
    Text: Transistors IC SMD Type NPN General Purpose Transistors BCF81 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 45 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		PDF BCF81 OT-23 bcf81 transistor smd marking NA sot-23

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification KC857T BC857T SOT-523 Unit: mm +0.1 1.6-0.1 Features +0.1 1.0-0.1 +0.05 0.2-0.05 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 Low voltage (max. 45 V). +0.01 0.1-0.01 0.55 Low current (max. 100 mA) 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1


    Original     		PDF KC857T BC857T) OT-523 KC857CT KC857AT KC857BT

    marking 1E

    Abstract: Transistors smd 1G smd 1f MARKING 1F BC847T
    Text: Transistors SMD Type NPN General Purpose Transistors KC847T BC847T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 2 1 +0.15 1.6-0.15 Low voltage (max. 45 V). +0.05 0.8-0.05 Low current (max. 100 mA) +0.01 0.1-0.01 0.55 Features 0.35 3 +0.25 0.3-0.05


    Original     		PDF KC847T BC847T) OT-523 KC847AT KC847BT KC847CT marking 1E Transistors smd 1G smd 1f MARKING 1F BC847T

    Untitled

    Abstract: No abstract text available
    Text: Transistors Diodes SMD Type Product specification BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF BCV62 BCV62B BCV61 BCV61A BCV61B BCV61C

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification BCV61 • Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 30


    Original     		PDF BCV61 BCV61C BCV61B BCV61A

    SMB1N-420H-02

    Abstract: No abstract text available
    Text: SMB1N-420H-02 v 1.0 17.07.2014 Description SMB1N-420H-02 is a surface mount InGaN High Power LED with a typical peak wavelength of 420 nm and radiation of 420 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin.


    Original     		PDF SMB1N-420H-02 SMB1N-420H-02

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification KC847T BC847T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 2 1 +0.15 1.6-0.15 Low voltage (max. 45 V). +0.05 0.8-0.05 Low current (max. 100 mA) +0.01 0.1-0.01 0.55 Features 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1


    Original     		PDF KC847T BC847T) OT-523 KC847AT KC847BT KC847CT

    SMD 3E

    Abstract: BC857T SMD Transistors 3f
    Text: Transistors SMD Type PNP General Purpose Transistors KC857T BC857T SOT-523 Unit: mm +0.1 1.6-0.1 Features +0.1 1.0-0.1 +0.05 0.2-0.05 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 Low voltage (max. 45 V). +0.01 0.1-0.01 0.55 Low current (max. 100 mA) 0.35 3 +0.25 0.3-0.05


    Original     		PDF KC857T BC857T) OT-523 KC857CT KC857AT KC857BT SMD 3E BC857T SMD Transistors 3f

    MARKING SMD 4G

    Abstract: kc860bw ie 420 smd marking BC860W MARKING SMD 4F
    Text: Transistors SMD Type PNP General Purpose Transistors KC860W BC860W Features Low current (max. 100 mA) Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage


    Original     		PDF KC860W BC860W) KC860W KC860BW KC860CW MARKING SMD 4G kc860bw ie 420 smd marking BC860W MARKING SMD 4F

    smd transistor marking D3

    Abstract: BCW33 SMD TRANSISTOR D2 marking D2 SOT-23 BCW31 BCW32 smd TRANSISTOR marking ku
    Text: Transistors IC SMD Type NPN General Purpose Transistors BCW31,BCW32,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 32 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF BCW31 BCW32 BCW33 OT-23 BCW32 BCW31 smd transistor marking D3 BCW33 SMD TRANSISTOR D2 marking D2 SOT-23 smd TRANSISTOR marking ku

    smd transistor marking 1B

    Abstract: SMD TRANSISTOR MARKING 1F smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1M smd transistor marking 1E SMD Transistor 1f SMD TRANSISTOR MARKING 1D smd 1G SMD transistor MARKING 65 smd transistor 1g
    Text: Transistors IC SMD Type NPN General Purpose Transistor BC846W,BC847W,BC848W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC846W BC847W BC848W Unit Collector-base voltage Parameter


    Original     		PDF BC846W BC847W BC848W BC846W BC847W BC846AW BC846BW BC847AW smd transistor marking 1B SMD TRANSISTOR MARKING 1F smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1M smd transistor marking 1E SMD Transistor 1f SMD TRANSISTOR MARKING 1D smd 1G SMD transistor MARKING 65 smd transistor 1g

    XXXXX18

    Abstract: 070-003 MENS package land pattern for soic8 PO101
    Text: 2 .2 8 0 .0 9 0 2.280 (.090) - BDTTDM VIEW 2 .6 6 0 (.10 5) A LTER N A TE BDTTDM V IE W 1 ,835±,420 6,000 ( , £ 36 ) .2 0 3 C008> 4 , 9 0 0 ¿ C l,9 3 ) UO-O-I 1,27 BSC (.050) “H j- ,070 f .420 (.016) (.003) I, 550 (.060) SID E V IE W UNLESS OTHERWISE SPECIFIED.


    OCR Scan     		PDF XXX-XX18 XXXXX18 070-003 MENS package land pattern for soic8 PO101