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    IF AMPLIFIER SPECIFICATION FOR 900MHZ TRANSCEIVER Search Results

    IF AMPLIFIER SPECIFICATION FOR 900MHZ TRANSCEIVER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    IF AMPLIFIER SPECIFICATION FOR 900MHZ TRANSCEIVER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    800-1200MHZ

    Abstract: operational amplifier discrete schematic printed spiral antenna VHF lna with agc NE625 SR00089 10GHz VCO
    Text: Philips Semiconductors Product specification 1GHz LNA and mixer NE/SA600 AC ELECTRICAL CHARACTERISTICS1,2 SYMBOL PARAMETER TEST CONDITIONS LIMITS –3σ TYP +3σ UNITS LNA VCC = VCCMX = +5V, TA = 25°C; Enable = Hi, Test Figure 1, unless otherwise stated.


    Original     		NE/SA600 S21/T S21/f 900MHz 800MHz 800-1200MHZ operational amplifier discrete schematic printed spiral antenna VHF lna with agc NE625 SR00089 10GHz VCO PDF

    NE5200D

    Abstract: tv receiver schematic diagram PHILIPS 900M Wideband Amplifier
    Text: Product Specification Philips Sem iconductors NE/SA5200 RF dual gain-stage DESCRIPTION FEATURES The NE/SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for


    OCR Scan     		NE/SA5200 1200MHz NE/SA5200 900MHz 100ra 50MHz -26dBm, 100pF NE5200D tv receiver schematic diagram PHILIPS 900M Wideband Amplifier PDF

    VHF Transceiver IC

    Abstract: NE5200 NE5200D NE602A SA5200D RF Radio frequency IC, 8pin 1.2ghz transmitter antenna philips radio 900MHz tv receiver schematic diagram PHILIPS
    Text: Philips Semiconductors RF Communications Products Product specification RF dual gain-stage DESCRIPTION NE/SA5200 FEATURES The NE/SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for


    Original     		NE/SA5200 NE/SA5200 1200MHz 900MHz 500MHz 100MHz 10MHz VHF Transceiver IC NE5200 NE5200D NE602A SA5200D RF Radio frequency IC, 8pin 1.2ghz transmitter antenna philips radio 900MHz tv receiver schematic diagram PHILIPS PDF

    1316D

    Abstract: VHF lna with agc GSM LNA NE600D SA600D vco fm 100mhz to 1ghz
    Text: Philips Semiconductors Product specification 1GHz LNA and mixer NE/SA600 DESCRIPTION PIN CONFIGURATION The NE/SA600 is a combined low noise amplifier LNA and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a 2dB noise


    Original     		NE/SA600 NE/SA600 800-1200MHz. 900MHz -10dBm 900MHz. SR00096 SR00097 1316D VHF lna with agc GSM LNA NE600D SA600D vco fm 100mhz to 1ghz PDF

    uhf vhf tv signal preamplifier transistor

    Abstract: SR00186 900mhz frequency generator Portable tv Circuit Diagram schematics NE5200 NE5200D NE602A SA5200D 900mhz chip antenna RF Radio frequency IC, 8pin
    Text: Philips Semiconductors Product specification RF dual gain-stage NE/SA5200 DESCRIPTION PIN CONFIGURATION The NE/SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for battery operated


    Original     		NE/SA5200 NE/SA5200 1200MHz SR00166 900MHz 500MHz 100MHz SR00191 uhf vhf tv signal preamplifier transistor SR00186 900mhz frequency generator Portable tv Circuit Diagram schematics NE5200 NE5200D NE602A SA5200D 900mhz chip antenna RF Radio frequency IC, 8pin PDF

    tv receiver schematic diagram PHILIPS

    Abstract: VHF Transceiver IC Portable tv Circuit Diagram schematics NE5200 SR00186 diagrams schematic of grading radio classic 960 NE602A SA5200 SA5200D RF Radio frequency IC, 8pin
    Text: INTEGRATED CIRCUITS IN2 GND2 4 3 OUT2 2 VCC 1 AMP2 AMP1 5 ENABLE 6 IN1 7 GND1 8 OUT1 SA5200 RF dual gain-stage Product Specification Replaces data of Oct 10 1991 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification


    Original     		SA5200 SA5200 1200MHz tv receiver schematic diagram PHILIPS VHF Transceiver IC Portable tv Circuit Diagram schematics NE5200 SR00186 diagrams schematic of grading radio classic 960 NE602A SA5200D RF Radio frequency IC, 8pin PDF

    800-1200MHZ

    Abstract: NE600D SA600D RF TRANSISTOR 10GHZ low noise BiCMOS Qubic process 1316D VHF lna 30 to philips radio 900MHz ne605 RADIO fm RECEIVER IC UHF
    Text: Philips Semiconductors RF Communications Products Product specification 1GHz LNA and mixer DESCRIPTION NE/SA600 FEATURES The NE/SA600 is a combined low noise amplifier LNA and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise


    Original     		NE/SA600 NE/SA600 800-1200MHz. 900MHz -10dBm 900MHz. 800-1200MHZ NE600D SA600D RF TRANSISTOR 10GHZ low noise BiCMOS Qubic process 1316D VHF lna 30 to philips radio 900MHz ne605 RADIO fm RECEIVER IC UHF PDF

    900mhz frequency generator

    Abstract: if amplifier specification for 900MHz transceiver tv receiver schematic diagram PHILIPS 1200MHZ lna philips radio 900MHz
    Text: Philips Semiconductors Product specification RF dual gain-stage SA5200 DESCRIPTION PIN CONFIGURATION The SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for battery operated


    OCR Scan     		SA5200 SA5200 1200MHz 10MHz at-26dB 50MHz -26dBm 100pF 900mhz frequency generator if amplifier specification for 900MHz transceiver tv receiver schematic diagram PHILIPS 1200MHZ lna philips radio 900MHz PDF

    NE600D

    Abstract: NE605
    Text: Product specification Philips Semiconductor* RF Communications Products 1GHz LNA and mixer NE/SA600 PIN CONFIGURATION DESCRIPTION FEATURES The NE/SA600 is a combined low noise amplifier LNA and mixer designed for high-performance iow-power communication


    OCR Scan     		NE/SA600 NE/SA600 800-1200MHz. 900MHz 900MHz. NE600D NE605 PDF

    900mhz frequency generator

    Abstract: BV 9y transistor VHF Transceiver IC NE5200D rf transmitter receiver 900Mhz A5200 NE5200 SA5200D RF Radio frequency IC, 8pin 900M Wideband Amplifier
    Text: Product Specification Philips Sem iconductors NE/SA5200 RF dual gain-stage DESCRIPTION FEATURES The NE/SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for


    OCR Scan     		NE5200/SA5200 1200MHz NE/SA5200 95fiA 900MHzut 711005b 10MHz -26dBm, 900mhz frequency generator BV 9y transistor VHF Transceiver IC NE5200D rf transmitter receiver 900Mhz A5200 NE5200 SA5200D RF Radio frequency IC, 8pin 900M Wideband Amplifier PDF

    800-1200MHZ

    Abstract: 1316D LNA Mixer VCO 2.4 GHz Sigma 8642 5Ghz lna transistor amplifier mixer circuit ccmx high frequency mixer UHF lna with agc VHF lna with agc
    Text: Philips Semiconductors Product specification 1 GHz LNA and mixer NE/SA600 DESCRIPTION PIN CONFIGURATION The NE7SA600 is a combined low noise am plifier LNA and mixer designed tor high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a 2dB noise


    OCR Scan     		NE/SA600 NE7SA600 800-1200MHz. 900MHz -10dBm 900MHz. 7110fl5k, 00fl311t 800-1200MHZ 1316D LNA Mixer VCO 2.4 GHz Sigma 8642 5Ghz lna transistor amplifier mixer circuit ccmx high frequency mixer UHF lna with agc VHF lna with agc PDF

    hitachi mosfet power amplifier audio application

    Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
    Text: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners


    Original     		AmVC132 HVC133 HVC134 HVM131S HVM131SR HVM132 HVM132WK hitachi mosfet power amplifier audio application transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI PDF

    Untitled

    Abstract: No abstract text available
    Text: ZIGBIT 900MHZ WIRELESS MODULES ATZB-RF-212B-0-CN DATASHEET Features Note: • • • • • • Compact size 30.0 x 20.0mm • • • • • • • • • Internal clock output • • • • Mesh networking capability MCU less transceiver module with SPI interface


    Original     		900MHZ ATZB-RF-212B-0-CN -103dBm) 112dB) PDF

    MESFET Application

    Abstract: hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 hitachi mosfet audio application note Hitachi audio mosfet application booster gsm antenna hitachi discrete circuit diagram wireless video transmitter and re 2SK239A
    Text: C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION:


    Original     		49E-13 00E-01 00E-06 44E-13 HVC133 30E-12 27E-15 HVM132WK MESFET Application hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 hitachi mosfet audio application note Hitachi audio mosfet application booster gsm antenna hitachi discrete circuit diagram wireless video transmitter and re 2SK239A PDF

    APP3629

    Abstract: MAX2016 MAX3654
    Text: Maxim > App Notes > AUTOMATIC TEST EQUIPMENT ATE HIGH-SPEED INTERCONNECT COMMUNICATIONS CIRCUITS Keywords: power detector, gain, calibration, slope, coupler losses, heterodyne transceiver, transmitter, receiver, ATE, log detector, VGA, VVA, RF detector, offset, log detector


    Original     		MAX2016 MAX2016 com/an3629 MAX2016: AN3629, APP3629, Appnote3629, APP3629 MAX3654 PDF

    gsm baseband IF 1994

    Abstract: PHILIPS GSM I Q GSM Transceiver 1994
    Text: Philips Sem iconductors O bjective specification Low-voltage IF l/Q transceiver SA1638 DESCRIPTION • High performance on-board integrated receive filters with The SA1638 is a combined Rx and Tx IF l/Q circuit. The receive path contains an IF amplifier, a pair of quadrature down-mixers, and


    OCR Scan     		SA1638 792kHz. 50kHz 500kHz. gsm baseband IF 1994 PHILIPS GSM I Q GSM Transceiver 1994 PDF

    uc IR for Tx, RX

    Abstract: GSM Transceiver 1994
    Text: Objective spécification Philips Semiconductor« Low-voltage GSM front-end transceiver SA1620 DESCRIPTION a Absolute gain tolerance in the Rx path: ±2dB active mode Tha SA1620 Is a combined rscwv* (Rx) and transmit (Tx) front-end tor GSM cellular telephones. Tha racalva path contains two low


    OCR Scan     		SA1620 70MHz 900MHz. SA1620 32dable DCS1800 10MHz 200kHz uc IR for Tx, RX GSM Transceiver 1994 PDF

    CMX990

    Abstract: EV9900 DE9901 864MHz C168 RF2173 TL11 EV9900A um9900 EV-9900
    Text: EV9900 CML Microcircuits Evaluation Kit User Manual COMMUNICATION SEMICONDUCTORS UM9900/1 September 2005 Advance Information Features • Complete 800 / 900 MHz Transceiver Initial Configuration for 819 - 825MHz Tx / 864 870MHz Rx • Test Access for Important Signals


    Original     		EV9900 UM9900/1 825MHz 870MHz 463MHz EV9900 CMX990 864-870MHz 819-825MHz DE9901 864MHz C168 RF2173 TL11 EV9900A um9900 EV-9900 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Low voltage IF I/Q transceiver SA1638 • High performance on-board integrated receive filters with DESCRIPTION The SA1638 is a combined Rx and Tx IF I/Q circuit. The receive path contains an IF amplifier, a pair of quadrature down-mixers, and


    Original     		SA1638 SA1638 SR00524 48-Pin SA1638BE OT313-2 PDF

    C144 TRANSISTOR RESISTOR

    Abstract: SWITCHING TRANSISTOR C144 C144 SA1620 SA1620BE SA1638 LNA21 philips gmsk
    Text: Philips Sem iconductors O bjective specification Low-voltage GSM front-end transceiver DESCRIPTION SA1620 • Absolute gain tolerance in the Rx path: ±2dB active mode The SA1620 is a combined receive (Rx) and transmit (Tx) front-end for GSM cellular telephones. The receive path contains two low


    OCR Scan     		SA1620 SA1620 70MHz 500MHz. 950MHz 10MHz DCS1800TX DCS1800 200kHz C144 TRANSISTOR RESISTOR SWITCHING TRANSISTOR C144 C144 SA1620BE SA1638 LNA21 philips gmsk PDF

    Untitled

    Abstract: No abstract text available
    Text: ZIGBIT 900MHZ WIRELESS MODULES ATZB-RF-212B-0-U DATASHEET Features • • • • • • Compact size 30.0 x 20.0mm MCU less Tranceiver module with SPI interface High RX sensitivity (-103dBm) Outperforming link budget (up to +112dB) Up to +9.0dBm output power


    Original     		900MHZ ATZB-RF-212B-0-U -103dBm) 112dB) PDF

    1nt02

    Abstract: g110 transistor C618 C134 C144 SA1620 SA1620BE SA1638 400MHZ transceiver DSC1800
    Text: INTEGRATED CIRCUITS SA1620 Low voltage GSM front-end transceiver Product specification 1995 Feb 23 IC17 Handbook Philips Semiconductors PHILIPS This Material Copyrighted By Its Respective Manufacturer PHILIPS Philips Semiconductors Product specification Low voltage GSM front-end transceiver


    OCR Scan     		SA1620 711DflSt) SA1620 70MHz 500MHz. 711002b TQFP48: OT313-1 1nt02 g110 transistor C618 C134 C144 SA1620BE SA1638 400MHZ transceiver DSC1800 PDF

    2SA1638

    Abstract: circuit diagram transceiver signal gsm PHILIPS GSM I Q
    Text: Philips Semiconductors Product specification Low voltage IF l/Q transceiver SA1638 DESCRIPTION • High performance on-board integrated receive filters with bandwidth tunable between 50-850 kHz The SA1638 is a combined Rx and Tx IF l/Q circuit. The receive


    OCR Scan     		SA1638 SA1638 2SA1638 circuit diagram transceiver signal gsm PHILIPS GSM I Q PDF

    LNA12

    Abstract: rf transmitter receiver 1800Mhz xl 1225 transistor SA1620BE c530 TRANSISTOR
    Text: Philips Semiconductors Product specification Low voltage GSM front-end transceiver DESCRIPTION SA1620 • Feedthrough attenuation LNA1 to Rx mixer > 35dB The SA1620 is a combined receive {Rx and transmit Tx) front-end for GSM cellular telephones. The receive path contains two low


    OCR Scan     		SA1620 SA1620 100mA SRQ0152 LNA12 rf transmitter receiver 1800Mhz xl 1225 transistor SA1620BE c530 TRANSISTOR PDF