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    IFS75B12N3E4_B31 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IFS75B12N3E4B31BOSA1

    IGBT MOD 1200V 150A 385W
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    DigiKey IFS75B12N3E4B31BOSA1 Tray 10
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    EBV Elektronik IFS75B12N3E4B31BOSA1 13 Weeks 10
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    Infineon Technologies AG IFS75B12N3E4B31BOS

    MIPAQ Base Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode and Current Sense Shunt 1200V Tray - Trays (Alt: IFS75B12N3E4B31BOSA1)
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    Avnet Americas IFS75B12N3E4B31BOS Tray 12 Weeks 10
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    Infineon Technologies AG IFS75B12N3E4_B31

    IGBT Modules MIPAQ BASE 1200V 75A
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    Mouser Electronics IFS75B12N3E4_B31
    • 1 $100.19
    • 10 $83.6
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    IFS75B12N3E4_B31 Datasheets (1)

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    ECAD Model
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    PDF
    IFS75B12N3E4B31BOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - MOD IGBT LOW PWR ECONO Original PDF

    IFS75B12N3E4_B31 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules IFS75B12N3E4_B31  


    Original
    IFS75B12N3E4 PDF

    474F3

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


    Original
    IFS75B12N3E4 E1322 FF326DC FC26E1 2313F D36134 1231423567896AB 54F36C 4112CD3567896BE 474F3 PDF

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules IFS75B12N3E4_B31  


    Original
    IFS75B12N3E4 PDF

    IFS75B12N3E4_B31

    Abstract: No abstract text available
    Text: Technische Information / technical information IFS75B12N3E4_B31 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


    Original
    IFS75B12N3E4 IFS75B12N3E4_B31 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC70T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:


    Original
    IGC70T120T8RM L7673U, L7673O, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC70T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:


    Original
    IGC70T120T8RM L7673U, L7673O, PDF

    IFS75B12N3E4

    Abstract: No abstract text available
    Text: IGC70T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:


    Original
    IGC70T120T8RM L7673U, L7673O, IFS75B12N3E4 PDF