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    IGBT 20A 1200V Search Results

    IGBT 20A 1200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 20A 1200V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FGA20N120FTD

    Abstract: No abstract text available
    Text: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 20A • High input impedance • RoHS compliant General Description Using advanced field stop trench technology, Fairchild’s 1200V


    Original     		PDF FGA20N120FTD FGA20N120FTD

    BSM20GP60

    Abstract: BSM35GP120 BSM25GP120 BSM50GP120 BSM15GP120 IGBT 600v 20a 600v 20a IGBT 600v 20a IGBT driver BSM30GP60 FP50R12KS4C
    Text: power the Home Products PIM News Contact Editorials Job Offers Company Search Site Content IGBT Modules . . . . . . . . . . . 10A 15A 20A 25A 30A 35A 35A 50A 50A 75A 100A IGBT Driver 600V Low Loss 1200V Low Loss BSM10GP60 BSM15GP60 BSM20GP60 BSM10GP120 BSM15GP120


    Original     		PDF BSM10GP60 BSM15GP60 BSM20GP60 BSM10GP120 BSM15GP120 BSM30GP60 BSM50GP60 BSM50GP60G BSM75GP60 BSM100GP60 BSM20GP60 BSM35GP120 BSM25GP120 BSM50GP120 BSM15GP120 IGBT 600v 20a 600v 20a IGBT 600v 20a IGBT driver BSM30GP60 FP50R12KS4C

    RG105

    Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
    Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability


    Original     		PDF IRGP20B120UD-E O-247AD 20KHz RG105 ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP20N120C3 IXYH20N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXYP20N120C3 IXYH20N120C3 108ns O-220 20N120C3

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 20A 1200v IRGPH40S
    Text: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A


    Original     		PDF IRGPH40S 400Hz) O-247AC TRANSISTOR BIPOLAR 400V 20A igbt 20A 1200v IRGPH40S

    fga20s120m

    Abstract: 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a
    Text: FGA20S120M tm 1200V, 20A ShortedAnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and ShortedAnode technology, Fairchild’s 1200V ShortedAnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This


    Original     		PDF FGA20S120M fga20s120m 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a

    FGA20N120

    Abstract: FGA20N120FTDTU 1200v 20a IGBT 600v 20a IGBT igbt 1200V 20A FGA20N120FTD igbt 20A 1200v 12v igbt 20a
    Text: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche


    Original     		PDF FGA20N120FTD FGA20N120FTD FGA20N120 FGA20N120FTDTU 1200v 20a IGBT 600v 20a IGBT igbt 1200V 20A igbt 20A 1200v 12v igbt 20a

    IXYP20N120C3

    Abstract: No abstract text available
    Text: Advance Technical Information IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXYP20N120C3 IXYH20N120C3 IC110 O-220 108ns O-247 20N120C3

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 20A 1200v IRGPH40S igbt 1200V 20A
    Text: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A


    Original     		PDF IRGPH40S 400Hz) O-247AC TRANSISTOR BIPOLAR 400V 20A igbt 20A 1200v IRGPH40S igbt 1200V 20A

    IRGP20B120UD-E

    Abstract: IGBT Transistor 1200V, 25A
    Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability


    Original     		PDF IRGP20B120UD-E O-247AD 20KHz IRGP20B120UD-E IGBT Transistor 1200V, 25A

    Untitled

    Abstract: No abstract text available
    Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching


    Original     		PDF FOD3120 35kV/Â FOD3120 200V/20A 200V/20A 400ns

    FOD3150

    Abstract: fod3120 FOD3150 application note 5A optocoupler FOD3120SDV IGBT/MOSFET Gate Drive FOD3120S FOD3120SD FOD3120SV FOD3120V
    Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching


    Original     		PDF FOD3120 FOD3120 200V/20A 200V/20A 400ns 100nsthout FOD3150 FOD3150 application note 5A optocoupler FOD3120SDV IGBT/MOSFET Gate Drive FOD3120S FOD3120SD FOD3120SV FOD3120V

    fod3120

    Abstract: 1200v 20a IGBT fod3120 applications 20A igbt FOD3120TV FOD3120SD FOD3150 FOD3120SDV FOD3120V Gate Drive Optocoupler
    Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching


    Original     		PDF FOD3120 FOD3120 200V/20A 200V/20A 400ns 100nsthout 1200v 20a IGBT fod3120 applications 20A igbt FOD3120TV FOD3120SD FOD3150 FOD3120SDV FOD3120V Gate Drive Optocoupler

    FOD3150

    Abstract: No abstract text available
    Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching


    Original     		PDF FOD3120 200V/20A FOD3150

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH1CM6DPQ-E0 1200V - 20A - IGBT Application: Inverter R07DS0521EJ0500 Rev.5.00 Jun 24, 2013 Features • Short circuit withstand time 10 s typ. • Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF R07DS0521EJ0500 PRSS0003ZE-A O-247)

    p623f

    Abstract: 600V1200V p623
    Text: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and


    Original     		PDF V23990-P62x-Fxx-U-02-14 P623-F04-PM P623-F14-PM P623-F24-PM P624-F24-PM P625-F24-PM p623f 600V1200V p623

    Untitled

    Abstract: No abstract text available
    Text: IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 1200V 20A 3.4V 108ns TO-263HV (IXYA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3 IC110 108ns O-263HV 20N120C3

    20N120A3

    Abstract: IXGH24N120C3 20N120 G20N120
    Text: Preliminary Technical Information VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGH20N120A3 IXGP20N120A3 GenX3TM 1200V IGBT Ultra-low Vsat PT IGBTs for up to 3 kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		PDF IC110 IXGA20N120A3 IXGH20N120A3 IXGP20N120A3 O-263 O-220 20N120A3 IXGH24N120C3 20N120 G20N120

    1 phase igbt 1200V 40A module

    Abstract: APTGU20H120T3
    Text: APTGU20H120T3 Full - Bridge PT IGBT Power Module VCES = 1200V IC = 20A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 Q1 CR3 CR1 18 19 Q2 22 7 23 8 CR2 26 Q3 11 Features


    Original     		PDF APTGU20H120T3 200kHz APTGU20H120T 1 phase igbt 1200V 40A module APTGU20H120T3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH1CM6DPQ-E0 1200V - 20A - IGBT Application: Inverter R07DS0521EJ0400 Rev.4.00 Jul 02, 2012 Features • Short circuit withstand time 10 s typ.  Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF R07DS0521EJ0400 PRSS0003ZE-A O-247)

    RJH1CD5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH1CD5DPQ-E0 1200V - 20A - IGBT Application: Inverter R07DS0517EJ0400 Rev.4.00 Jan 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF R07DS0517EJ0400 PRSS0003ZE-A O-247) RJH1CD5

    H-Bridge

    Abstract: 600V1200V p623f
    Text: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and


    Original     		PDF V23990-P62x-Fxx-U-02-14 P623-F04-PM P623-F14-PM P623-F24-PM P624-F24-PM P625-F24-PM P629-F44-U-02-14 H-Bridge 600V1200V p623f

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH1CD5DPQ-E0 1200V - 20A - IGBT Application: Inverter R07DS0517EJ0500 Rev.5.00 Jun 12, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF R07DS0517EJ0500 PRSS0003ZE-A O-247)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH1CM6DPQ-E0 1200V - 20A - IGBT Application: Inverter R07DS0521EJ0400 Rev.4.00 Jul 02, 2012 Features • Short circuit withstand time 10 s typ.  Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF R07DS0521EJ0400 PRSS0003ZE-A O-247)