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    IGBT 20A 500V Search Results

    IGBT 20A 500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 20A 500V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G20N50c

    Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
    Text: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


    Original     		PDF HGTG20N50C1D O-247 500ns 150oC. G20N50c g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254

    G20N50c

    Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
    Text: HGTG20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE


    Original     		PDF HGTG20N50C1D O-247 500ns 150oC. AN7254 AN7260) 150oC 100oC G20N50c g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt

    Untitled

    Abstract: No abstract text available
    Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C


    Original     		PDF 94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994.

    C-150

    Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH
    Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C


    Original     		PDF 94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH

    C-150

    Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K
    Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C


    Original     		PDF 94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994. C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K

    Untitled

    Abstract: No abstract text available
    Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching


    Original     		PDF FOD3120 35kV/Â FOD3120 200V/20A 200V/20A 400ns

    FOD3150

    Abstract: fod3120 FOD3150 application note 5A optocoupler FOD3120SDV IGBT/MOSFET Gate Drive FOD3120S FOD3120SD FOD3120SV FOD3120V
    Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching


    Original     		PDF FOD3120 FOD3120 200V/20A 200V/20A 400ns 100nsthout FOD3150 FOD3150 application note 5A optocoupler FOD3120SDV IGBT/MOSFET Gate Drive FOD3120S FOD3120SD FOD3120SV FOD3120V

    A 3150 igbt driver

    Abstract: FOD3120 30V 20A 10KHz power MOSFET FOD3150 IGBT/MOSFET Gate Drive 3150 optocoupler A 3150 opto IGBT Gate Drive Optocoupler induction heating circuits FOD3150SD
    Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching


    Original     		PDF FOD3150 FOD3150 00V/20A 500ns 300ns A 3150 igbt driver FOD3120 30V 20A 10KHz power MOSFET IGBT/MOSFET Gate Drive 3150 optocoupler A 3150 opto IGBT Gate Drive Optocoupler induction heating circuits FOD3150SD

    fod3120

    Abstract: 1200v 20a IGBT fod3120 applications 20A igbt FOD3120TV FOD3120SD FOD3150 FOD3120SDV FOD3120V Gate Drive Optocoupler
    Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching


    Original     		PDF FOD3120 FOD3120 200V/20A 200V/20A 400ns 100nsthout 1200v 20a IGBT fod3120 applications 20A igbt FOD3120TV FOD3120SD FOD3150 FOD3120SDV FOD3120V Gate Drive Optocoupler

    FOD3150 application note

    Abstract: No abstract text available
    Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching


    Original     		PDF FOD3150 20kV/Â FOD3150 00V/20A 500ns 300ns FOD3150 application note

    FOD3120SD

    Abstract: 3120 v IGBT DRIVER FOD3120 a 3120 pin diagram optocoupler FOD3120TV 20A igbt fod3120v fod3120 applications FOD3150 control motor dc 6v
    Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching


    Original     		PDF FOD3120 00V/20A FOD3120SD 3120 v IGBT DRIVER a 3120 pin diagram optocoupler FOD3120TV 20A igbt fod3120v fod3120 applications FOD3150 control motor dc 6v

    FOD3150

    Abstract: No abstract text available
    Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching


    Original     		PDF FOD3120 200V/20A FOD3150

    FOD3150

    Abstract: FOD3120 FOD3150SD IEC60747-5-2 Gate Drive Optocoupler
    Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching


    Original     		PDF FOD3150 FOD3150 00V/20A 500ns 300ns 10C/sec FOD3120 FOD3150SD IEC60747-5-2 Gate Drive Optocoupler

    Untitled

    Abstract: No abstract text available
    Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching


    Original     		PDF FOD3150 20kV/Â FOD3150 00V/20A 500ns 300ns

    FOD3150

    Abstract: FOD312 FOD3150 application note FOD3120 PC 1335 fod3120 applications 30V 20A 10KHz power MOSFET FOD3150SD IEC60747-5-2 OPTOCOUPLER 15V
    Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching


    Original     		PDF FOD3150 FOD3150 00V/20A 500ns 300ns FOD312 FOD3150 application note FOD3120 PC 1335 fod3120 applications 30V 20A 10KHz power MOSFET FOD3150SD IEC60747-5-2 OPTOCOUPLER 15V

    pwm 18 pin

    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIER SA08 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • IGBT OUTPUTS WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR


    Original     		PDF 546-APEX RANGE--16-500V TE9493 SA08U pwm 18 pin

    motor driver full bridge 20A

    Abstract: h-bridge igbt pwm igbt capacitor charge pump 10KW MO-127 SA08 380v motor igbt
    Text: PULSE WIDTH MODULATION AMPLIFIER SA08 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • IGBT OUTPUTS WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR


    Original     		PDF 546-APEX RANGE--16-500V TE9493 SA08U motor driver full bridge 20A h-bridge igbt pwm igbt capacitor charge pump 10KW MO-127 SA08 380v motor igbt

    Untitled

    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIERS SA08 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • IGBT OUTPUTS WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR


    Original     		PDF 546-APEX RANGE--16-500V TE9493 SA08U

    Untitled

    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIER SA08 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • IGBT OUTPUTS WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR


    Original     		PDF 546-APEX RANGE--16-500V TE9493 SA08U

    MO-127

    Abstract: 10KW SA08 380v motor igbt
    Text: PULSE WIDTH MODULATION AMPLIFIER SA08 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • IGBT OUTPUTS WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR


    Original     		PDF 546-APEX RANGE--16-500V TE9493 SA08U MO-127 10KW SA08 380v motor igbt

    10KW

    Abstract: IN4148 MO-127 SA18 USA690-8601 IGBT application notes 10KW
    Text: PULSE WIDTH MODULATION AMPLIFIER SA18 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • HALF BRIDGE IGBT OUTPUT WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR


    Original     		PDF 546-APEX RANGE--16-500V TE9493 SA18U 10KW IN4148 MO-127 SA18 USA690-8601 IGBT application notes 10KW

    Untitled

    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIER SA18 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • HALF BRIDGE IGBT OUTPUT WIDE SUPPLY RANGE—16-500V 20A TO 100° C CASE 3 PROTECTION CIRCUITS SYNCHRONIZED OR EXTERNAL OSCILLATOR


    Original     		PDF 546-APEX RANGE--16-500V TE9493 SA18U

    PJ 969 diode

    Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
    Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode


    OCR Scan     		PDF 500ns HGTG20N50C1D O-247 AN7254 AN7260) PJ 969 diode G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V

    PJ 969 diode

    Abstract: DIODE 25PH 500 M302E71 pj 809 HGTG20N50C1D 08/bup 3110 transistor
    Text: HARRIS SEMICOND SECTOR ffl j a r s 1 bêE D • Lt30SE71 00502Ö3 732 ■ H A S HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 20 Amp, 500 Volt • Latch Free Operation


    OCR Scan     		PDF t30SE71 HGTG20N50C1D O-247 500ns AN7254 AN7260) M302E71 QD50S67 PJ 969 diode DIODE 25PH 500 pj 809 HGTG20N50C1D 08/bup 3110 transistor