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    IGBT 400V 100KHZ 30A Search Results

    IGBT 400V 100KHZ 30A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 400V 100KHZ 30A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 600V 30A

    Abstract: IGBT 400V 100KHZ 30A APT30GS60BRDQ2 MIC4452 MOSFET 40A 600V
    Text: APT30GS60BRDQ2 G APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT30GS60BRDQ2 APT30GS60SRDQ2 100kHz, mosfet 600V 30A IGBT 400V 100KHZ 30A MIC4452 MOSFET 40A 600V

    Untitled

    Abstract: No abstract text available
    Text: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT30GS60BRDL 100kHz,

    Untitled

    Abstract: No abstract text available
    Text: APT20GS60KR G 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for signi cantly lower turn-on energy Eoff. The low


    Original     		PDF APT20GS60KR 100kHz, JESD24-1. O-220

    IGBT 400V 100KHZ 30A

    Abstract: MIC4452
    Text: APT30GS60KR G 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT30GS60KR 100kHz, JESD24-1. O-220 IGBT 400V 100KHZ 30A MIC4452

    MOSFET welding INVERTER 200A

    Abstract: Mosfet 30A 300V APT30GS60BRDL MIC4452 single phase igbt based WELDING inverter 200 amps SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
    Text: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT30GS60BRDL 100kHz, MOSFET welding INVERTER 200A Mosfet 30A 300V MIC4452 single phase igbt based WELDING inverter 200 amps SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

    Untitled

    Abstract: No abstract text available
    Text: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT30GS60BRDL 100kHz, O-247

    600v 20a IGBT driver

    Abstract: APT20GS60KR MIC4452 motor driver full bridge 20A
    Text: APT20GS60KR G 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT20GS60KR 100kHz, JESD24-1. O-220 600v 20a IGBT driver MIC4452 motor driver full bridge 20A

    inverter 12v to 220 ac mosfet based

    Abstract: No abstract text available
    Text: APT30GS60KR G 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for signi cantly lower turn-on energy Eoff. The low


    Original     		PDF APT30GS60KR 100kHz, JESD24-1. O-220 inverter 12v to 220 ac mosfet based

    Untitled

    Abstract: No abstract text available
    Text: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT30GS60BRDL 100kHz, O-247

    Infineon diffusion solder

    Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
    Text: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices


    Original     		PDF 600/650V SDB06S60 IDD02SG60C IDD03SG60C IDD04SG60C IDD05SG60C IDD06SG60C IDD08SG60C IDD09SG60C IDD10SG60C Infineon diffusion solder Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v

    Untitled

    Abstract: No abstract text available
    Text: APT30GS60BRDQ2 G APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT30GS60BRDQ2 APT30GS60SRDQ2 100kHz,

    Untitled

    Abstract: No abstract text available
    Text: APT30GS60BRDQ2 G APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT30GS60BRDQ2 APT30GS60SRDQ2 100kHz, circuit016)

    APT30GT60BRG

    Abstract: APT30GT60BR
    Text: APT30GT60BR G 600V TYPICAL PERFORMANCE CURVES APT30GT60BR APT30GT60BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT30GT60BR APT30GT60BR APT30GT60BRG* 100KHz APT30GT60BRG

    APT30GT60BRG

    Abstract: APT30GT60BR diode 5.9
    Text: TYPICAL PERFORMANCE CURVES APT30GT60BR G 600V APT30GT60BR APT30GT60BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT30GT60BR APT30GT60BR APT30GT60BRG* 100KHz APT30GT60BRG diode 5.9

    apt30gt60br

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT30GT60BR G 600V APT30GT60BR APT30GT60BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT30GT60BR APT30GT60BR APT30GT60BRG* 100KHz

    3006P

    Abstract: STTA3006PI F60A150 MOSFET 1200v 30a STTA3006P stta 50 a diode 600v high transistor MN 1510 g
    Text: STTA3006P I  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 30A VRRM 600V trr (typ) 35ns VF (max) 1.5V K A IF(AV) FEATURES AND BENEFITS A A SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST RECOVERY.


    Original     		PDF STTA3006P STTA3006P STTA3006PI 3006P STTA3006PI F60A150 MOSFET 1200v 30a stta 50 a diode 600v high transistor MN 1510 g

    APT30GT60KR

    Abstract: APT30GT60KRG
    Text: TYPICAL PERFORMANCE CURVES APT30GT60KR G 600V APT30GT60KR APT30GT60KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-220 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT30GT60KR APT30GT60KR APT30GT60KRG* O-220 100KHz APT30GT60KRG

    L60A

    Abstract: MOSFET 1200v 30a 400v philips
    Text: STTA6006T V 1/2  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) 2*30A VRRM 600V trr (typ) 35ns VF (max) K2 A2 K1 A1 STTA6006T(V)1 1.5V A2 K1 K2 A1 STTA6006T(V)2 FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode


    Original     		PDF STTA6006T L60A MOSFET 1200v 30a 400v philips

    APT30GT60BRDQ2G

    Abstract: APT30GT60BRDQ2 APT6017LLL
    Text: APT30GT60BRDQ2 G 600V TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2 APT30GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT30GT60BRDQ2 APT30GT60BRDQ2 APT30GT60BRDQ2G* 100KHz APT30GT60BRDQ2G APT6017LLL

    APT30GT60BRDQ2

    Abstract: APT30GT60BRDQ2G APT6017LLL JESD24
    Text: TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2 G 600V APT30GT60BRDQ2 APT30GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT30GT60BRDQ2 APT30GT60BRDQ2 APT30GT60BRDQ2G* 100KHz APT30GT60BRDQ2G APT6017LLL JESD24

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2 G 600V APT30GT60BRDQ2 APT30GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT30GT60BRDQ2 APT30GT60BRDQ2 APT30GT60BRDQ2G* 100KHz

    Untitled

    Abstract: No abstract text available
    Text: APT30GT60BRDQ2 G 600V TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2 APT30GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT30GT60BRDQ2 APT30GT60BRDQ2 APT30GT60BRDQ2G* 100KHz

    G10T60

    Abstract: No abstract text available
    Text: TRENCHSTOP Series IGB10N60T p Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for frequency inverters for washing machines, fans, pumps and vacuum


    Original     		PDF IGB10N60T G10T60

    G10T60

    Abstract: No abstract text available
    Text: TRENCHSTOP Series IGP10N60T q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Variable Speed Drive for washing machines and air conditioners


    Original     		PDF IGP10N60T G10T60