IGBT DRIVE 600V 300A
Abstract: what is fast IGBT transistor igbt 600V 300A QIQ0630003 fast recovery diode 600v 1200A
Text: QIQ0630003 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy
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QIQ0630003
-1200A/
IGBT DRIVE 600V 300A
what is fast IGBT transistor
igbt 600V 300A
QIQ0630003
fast recovery diode 600v 1200A
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GATE VOLTAGE FOR 300A ,600V IGBT
Abstract: fast recovery diode 600v 1200A IGBT DRIVE 600V 300A igbt 600V diode 600v IGBT 600V 16 QIQ0630003
Text: QIQ0630003 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy
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QIQ0630003
-1200A/
GATE VOLTAGE FOR 300A ,600V IGBT
fast recovery diode 600v 1200A
IGBT DRIVE 600V 300A
igbt 600V
diode 600v
IGBT 600V 16
QIQ0630003
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igbt 600V 300A
Abstract: QIQ0630003 GATE VOLTAGE FOR 300A ,600V IGBT E1. N diode IGBT 600V 16 igbt 600V IGBT DRIVE 600V 300A
Text: QIQ0630003 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy
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QIQ0630003
-1200A/S
igbt 600V 300A
QIQ0630003
GATE VOLTAGE FOR 300A ,600V IGBT
E1. N diode
IGBT 600V 16
igbt 600V
IGBT DRIVE 600V 300A
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SIGC156T60NR2C
Abstract: A001 7282M
Text: Preliminary SIGC156T60NR2C IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC156T60NR2C 600V ICn 200A C This chip is used for: • IGBT-Modules
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SIGC156T60NR2C
SIGC156T60NR2C
Q67050-A4013sawn
7282-M,
A001
7282M
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Untitled
Abstract: No abstract text available
Text: APTGV100H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 90A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter
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APTGV100H60T3G
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Untitled
Abstract: No abstract text available
Text: APTGV30H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3
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APTGV30H60T3G
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APT0406
Abstract: APT0502 APTGV30H60T3G
Text: APTGV30H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C Q3 11 • Solar converter
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APTGV30H60T3G
APT0406
APT0502
APTGV30H60T3G
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Untitled
Abstract: No abstract text available
Text: APTGV50H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3
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APTGV50H60T3G
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APTGV50H60T3G
Abstract: APT0406 APT0502
Text: APTGV50H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Q3 11 • Solar converter
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APTGV50H60T3G
APTGV50H60T3G
APT0406
APT0502
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APT0406
Abstract: APT0502 APTGV100H60T3G
Text: APTGV100H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 90A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80°C Q3 11 • Solar converter
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APTGV100H60T3G
APT0406
APT0502
APTGV100H60T3G
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APT0406
Abstract: APT0502 APTGV75H60T3G
Text: APTGV75H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 60A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C Q3 11 • Solar converter
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APTGV75H60T3G
APT0406
APT0502
APTGV75H60T3G
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Untitled
Abstract: No abstract text available
Text: APTGV75H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 60A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3
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APTGV75H60T3G
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM MMIX1X200N60B3 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 120A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings
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MMIX1X200N60B3
IC110
110ns
10-30kHz
MMIX1X200N60B3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol Test Conditions VCES VCGR
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MMIX1X200N60B3H1
IC110
110ns
10-30kHz
IF110
MMIX1X200N60B3
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MMIX1X200N60B3
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM MMIX1X200N60B3 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 120A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings
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10-30kHz
IC110
MMIX1X200N60B3
110ns
MMIX1X200N60B3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR
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IXXN200N60B3H1
IC110
110ns
10-30kHz
OT-227B,
E153432
IF110
200N60B3
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Untitled
Abstract: No abstract text available
Text: APTGV50H60BG Trench & Field Stop IGBT Q1, Q3: VCES = 600V , IC = 50A @ Tc = 80°C Boost chopper CoolMos + full bridge NPT & Trench + Field Stop IGBT Power module K K CoolMOS™ Q5: VCES = 600V ; IC = 49A @ Tc = 25°C VBUS2 VBUS1 Q1 Q3 CR1 G1 CR5 Fast NPT IGBT Q2, Q4:
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APTGV50H60BG
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MMIX1X200N60B3H1
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings
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10-30kHz
IC110
IF110
MMIX1X200N60B3H1
110ns
MMIX1X200N60B3
MMIX1X200N60B3H1
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT IXGR72N60B3H1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 92ns Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings
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IXGR72N60B3H1
IC110
247TM
IF110
72N60B3
02-10-09-D
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings
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MMIX1X200N60B3H1
IC110
110ns
10-30kHz
IF110
MMIX1X200N60B3
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72N60A3
Abstract: IXGR72N60A3H1 IF110 ISOPLUS247
Text: Advance Technical Information IXGR72N60A3H1 GenX3TM 600V IGBT w/Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 52A 1.35V 250ns Ultra-Low Vsat PT IGBT for up to 5kHz Switching Symbol Test Conditions Maximum Ratings
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IXGR72N60A3H1
IC110
250ns
IF110
72N60A3
04-23-09-C
IXGR72N60A3H1
IF110
ISOPLUS247
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information GenX3TM 600V IGBT w/Diode IXGR72N60A3H1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 52A 1.35V 250ns Ultra-Low Vsat PT IGBT for up to 5kHz Switching Symbol Test Conditions Maximum Ratings
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IXGR72N60A3H1
IC110
250ns
247TM
72N60A3
04-23-09-C
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXGR72N60A3H1 GenX3TM 600V IGBT w/Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = £ = 600V 52A 1.35V 250ns Ultra-Low Vsat PT IGBT for up to 5kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings
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IXGR72N60A3H1
IC110
250ns
ISOPLUS247TM
IF110
72N60A3
04-23-09-C
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IXGR72N60B3H1
Abstract: 72N60B3 IF110 ISOPLUS247 180v dc motor speed control
Text: Preliminary Technical Information IXGR72N60B3H1 GenX3TM 600V IGBT VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 92ns Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings
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IXGR72N60B3H1
IC110
247TM
IF110
72N60B3
02-10-09-D
IXGR72N60B3H1
IF110
ISOPLUS247
180v dc motor speed control
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