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    IGBT 60A 1700V Search Results

    IGBT 60A 1700V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 60A 1700V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FGL60N170D

    Abstract: No abstract text available
    Text: IGBT FGL60N170D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A


    Original     		PDF FGL60N170D FGL60N170D O-264

    induction heater

    Abstract: transistor fgl60n170d FGL60N170D
    Text: IGBT FGL60N170D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A


    Original     		PDF FGL60N170D FGL60N170D O-264 induction heater transistor fgl60n170d

    IGBT 60A 1700v

    Abstract: FGL60N170D FGL60N170DTU transistor fgl60n170d
    Text: IGBT FGL60N170D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A


    Original     		PDF FGL60N170D FGL60N170D O-264 FGL60N170DTU O-264 IGBT 60A 1700v transistor fgl60n170d

    CM150DU-34KA

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE CM150DU-34KA ● IC . 150A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack


    Original     		PDF CM150DU-34KA CM150DU-34KA

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM150DU-34KA ● IC . 150A ● VCES . 1700V


    Original     		PDF CM150DU-34KA

    CM150DU-34KA

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE CM150DU-34KA ● IC . 150A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack


    Original     		PDF CM150DU-34KA CM150DU-34KA

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM150DU-34KA ● IC . 150A ● VCES . 1700V


    Original     		PDF CM150DU-34KA

    cm150dy-34a

    Abstract: diode IN 34A
    Text: MITSUBISHI IGBT MODULES CM150DY-34A HIGH POWER SWITCHING USE CM150DY-34A ¡IC . 150A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack


    Original     		PDF CM150DY-34A cm150dy-34a diode IN 34A

    CM150DY-34A

    Abstract: IGBT 60A 1700v
    Text: MITSUBISHI IGBT MODULES CM150DY-34A HIGH POWER SWITCHING USE CM150DY-34A ¡IC . 150A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack


    Original     		PDF CM150DY-34A 078K/W CM150DY-34A IGBT 60A 1700v

    APT0406

    Abstract: APT0502
    Text: APTGT30SK170T1G Buck chopper Trench + Field Stop IGBT Power Module 5 6 VCES = 1700V IC = 30A @ Tc = 80°C Application 11 • • Q1 CR1 Features 7 8 • 3 4 NTC CR2 1 AC and DC motor control Switched Mode Power Supplies 2 • • • 12 Trench + Field Stop IGBT® Technology


    Original     		PDF APTGT30SK170T1G APT0406 APT0502

    APT0406

    Abstract: APT0502
    Text: APTGT30DA170T1G Boost chopper Trench + Field Stop IGBT Power Module 5 6 VCES = 1700V IC = 30A @ Tc = 80°C Application 11 • • • CR1 Features 3 4 Q2 NTC • CR2 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction 12


    Original     		PDF APTGT30DA170T1G APT0406 APT0502

    APT0406

    Abstract: APT0502 APTGT30H170T3G
    Text: APTGT30H170T3G Full - Bridge Trench + Field Stop IGBT Power Module VCES = 1700V IC = 30A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 19 Q2 22 7 23 8 CR2 26 Q3


    Original     		PDF APTGT30H170T3G APT0406 APT0502 APTGT30H170T3G

    Untitled

    Abstract: No abstract text available
    Text: APTGT30H170T3G Full - Bridge Trench + Field Stop IGBT Power Module VCES = 1700V IC = 30A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 Q1 CR1 18 CR3 Q3 11 19 Features


    Original     		PDF APTGT30H170T3G

    IGBT 60A 1700v

    Abstract: CM150DU-34KA
    Text: 三菱半導体〈IGBTモジュール〉 CM150DU-34KA 大電力スイッチング用 CM150DU-34KA ¡IC . 150A ¡VCES . 1700V ¡絶縁形


    Original     		PDF CM150DU-34KA IGBT 60A 1700v CM150DU-34KA

    Untitled

    Abstract: No abstract text available
    Text: Motor Control Board Name Products Description Order No. For Microcontroller, RF & Protection Devices and Wireless Control boards please see the appropriate chapter. TLE 7810 TLE 7824 TLE 7826 Embedded power/ smart relay driver IC Demoboard TLE7826 For quick-starting into lab evaluation of Speed PROFET


    Original     		PDF TLE7826 50060-1TEA. 25kHz 2ED020I12-FI 7ED020E12 2ED250E12-F SP000614428 1ED020I12-F.

    112C1

    Abstract: CM150DY-34A
    Text: 三菱半導体〈IGBTモジュール〉 CM150DY-34A 大電力スイッチング用 CM150DY-34A ¡IC . 150A ¡VCES . 1700V ¡絶縁形


    Original     		PDF CM150DY-34A 112C1 CM150DY-34A

    CM150DU-34KA

    Abstract: No abstract text available
    Text: CM150DU-34KA Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD KA-Series Module 150 Amperes/1700 Volts TC Measured Point A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q K P Q G N


    Original     		PDF CM150DU-34KA Amperes/1700 CM150DU-34KA

    APT0406

    Abstract: APT0502
    Text: APTGT30A170T1G Phase leg Trench + Field Stop IGBT Power Module 5 Q1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 11 6 CR1 7 8 3 4 Q2 Features • Trench + Field Stop IGBT® Technology


    Original     		PDF APTGT30A170T1G APT0406 APT0502

    Untitled

    Abstract: No abstract text available
    Text: APTGT30A170T1G Phase leg Trench + Field Stop IGBT Power Module 5 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 11 6 Q1 CR1 7 8 3 4 Features • Trench + Field Stop IGBT® Technology


    Original     		PDF APTGT30A170T1G

    CM150DU-34K

    Abstract: IGBT 800
    Text: CM150DU-34K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD K-Series Module 150 Amperes/1700 Volts TC Measured Point A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q Q K K H U C1 P


    Original     		PDF CM150DU-34K Amperes/1700 CM150DU-34K IGBT 800

    Untitled

    Abstract: No abstract text available
    Text: CM150DU-34KA Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD KA-Series Module 150 Amperes/1700 Volts TC Measured Point A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q K Q K H U C1


    Original     		PDF CM150DU-34KA Amperes/1700

    Untitled

    Abstract: No abstract text available
    Text: APTGT30DA170T1G Boost chopper Trench + Field Stop IGBT3 Power Module 5 6 VCES = 1700V IC = 30A @ Tc = 80°C Application 11 •   CR1 Features 3 4 Q2 NTC  CR2 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction 12


    Original     		PDF APTGT30DA170T1G

    Untitled

    Abstract: No abstract text available
    Text: APTGT30SK170T1G Buck chopper Trench + Field Stop IGBT3 Power Module 5 6 VCES = 1700V IC = 30A @ Tc = 80°C Application 11 •  Q1 CR1 Features 7 8  3 4 NTC CR2 1 AC and DC motor control Switched Mode Power Supplies 2    12 Trench + Field Stop IGBT3 Technology


    Original     		PDF APTGT30SK170T1G

    MG75J2YS40

    Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
    Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45