MIG75Q201H
Abstract: No abstract text available
Text: MIG75Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75Q201H High Power Switching Applications Motor Control Applications Integrates inverter, brake power circuits & control circuits IGBT drive units, protection units for over-current, under-voltage & over-temperature in one package.
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MIG75Q201H
2-136A1A
MIG75Q201H
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MIG75Q201H
Abstract: TOSHIBA IGBT
Text: MIG75Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75Q201H High Power Switching Applications Motor Control Applications Integrates inverter, brake power circuits & control circuits IGBT drive units, protection units for over-current, under-voltage & over-temperature in one package.
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MIG75Q201H
2-136A1A
MIG75Q201H
TOSHIBA IGBT
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Untitled
Abstract: No abstract text available
Text: MIG75Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75Q201H High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits IGBT drive units, protection units for over-current,
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MIG75Q201H
2-136A1A
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GT30J322
Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: [2] ຠ⚫ [ 2 ] ຠ⚫ 1. 600 V ࡕࠫࡘ࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉߒߣ࠼ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ㘻㔚ߣߩ࠻࠼ࠝࡈߩᡷༀࠍታߒ߹ߒߚޕ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታߒޔ㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚޕ
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MG800J2YS50A)
MG300J1US51
MG400J1US51
MG50J2YS50
MG75J2YS50
MG100J2YS50
MG150J2YS50
MG200J2YS50
MG300J2YS50
MG100J7KS50
GT30J322
MP6750
MG200Q2YS40
MG100Q2YS42
GT60M301
GT60N321
IGBT gt20d201
mg300j2ys50
MIG75Q7CSA0X
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Untitled
Abstract: No abstract text available
Text: TOSHIBA INTELLIGENT GTR MODULE MIG75Q201H PRELIMINARY High Power Switching Applications Motor Control Applications • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.
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MIG75Q201H
210ns
GND00
0020b43
PW05770796
IG75Q201H
0020fc
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MIG75Q201H
Abstract: TLP559
Text: TOSHIBA M IG75Q201H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT MIG75Q201H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for
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MIG75Q201H
2-136A1A
961001EAA1
4-HH44-HH-h-H-H-l-H-
MIG75Q201H
TLP559
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG75Q201H MIG75Q201H TO SH IBA INTELLIGENT GTR M O D ULE SILICON N CHANNEL IGBT HIGH P O W E R SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for
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MIG75Q201H
21/iS
2-136A1A
M1G75Q201H
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MIG75Q 201H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT MIG75Q201H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for
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MIG75Q
MIG75Q201H
2-136A1A
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S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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200-V
400J101H
MG75J1BS11
MG25J1B511
MG50J1BS11
MG100J1BS11
MG150J1BS11
MG25Q1BS11
MG50Q1BS11
MG75Q1BS11
S5J53
MIG30J103H
200J2
S5J25
mg7502ys
MG150J1JS50
MIG100Q201H
GT60M301
MIG30J103HB
MP6753
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GT250101
Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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2-99A1A
2-99B1A
GT250101
MG150J2YS40
MG75Q2YS11
MG400Q1US11
MG200Q1JS9
MG75J2YS40
MG50J6ES40
MG200Q2YS91
MG75J6ES40
mg100q2ys9
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G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101
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GT10G101
GT10J301
GT10J311
GT10Q301
GT10Q
GT15G101
GT15J101
GT15J102
GT15J103
GT15Q101
G50Q2YS40
MG8Q6ES42
GT8Q102
mg300q1us41
GT60M301
MIG50J904H
gt15j103
MIG30J103H
MG25Q6ES50A
mg150q1js
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MIG30J103H
Abstract: LCA145 30J103H 200J2 TOSHIBA IGBT snubber diode 119 MIG100Q201H 50j201 M1G5 inverter IGBT 3 phases
Text: TOSHIBA [6 ] Description of the Intelligent GTR Modules [6 ] Description of the Intelligent GTR Module 117 TOSHIBA 2. [6 ] Description of the Intelligent GTR Modules Ratings and Use 2.1 16 2.1.1 Pin Sym bo l D e fin itio n s 15 M 13 12 11 10 9 8 1. G N D U
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MG75J2YS40
Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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OCR Scan
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2-109C1A
MG50J6ES50
MG75J6ES50
2-94A2A
MG100J6ES50
MG50Q6ES11
MIG150J201H
MIG200J201H
MIG75Q201H
MIG100Q201H
MG75J2YS40
MG100J2YS45
MG50J2YS45
MG150J2YS45
MG300Q1US
MG400Q1US11
MG400J2YS40
MG150J2YS40
MG200Q2YS1
MG200J2YS45
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