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    IGBT FZ 1200 R 33 KF1 Search Results

    IGBT FZ 1200 R 33 KF1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation

    IGBT FZ 1200 R 33 KF1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    eupec igbt 3300v

    Abstract: transistor 6.z eupec FZ 900 R 12
    Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 33 KF1 61,5 61,5 M8 13 190 31,5 171 57 C C C E E E 4,0 tief C 2,5 tief M4 E G 20,25 28 7 41,25 79,4 external connection to be done C C C E E E C G E external connection to


    Original     		PDF 220nF, eupec igbt 3300v transistor 6.z eupec FZ 900 R 12

    FZ 1800 R17 KF4

    Abstract: IGBT FZ 1800 KF6C FZ 800 R 12 KF6 IGBT FZ 1200 IGBT FZ 1000 FZ 1800 R 17 KF4 FD 1200 igbt F4 400 R 12 KF4 IGBT FF 300 R 12 KF2
    Text: Click on outline no. IGBT High Power Modules Type * Eon / VCES Ic A VCEsat RthJC outline Eoff V V °C/W Tvj=25° mWs per arm C typ. Tvj=125° C typ Dual modules Type VCES Ic A V VCEsat Eon / Eoff RthJC outline mWs V °C/W Tvj=25° Tvj=125° per arm C typ.


    Original     		PDF 12KL4C FZ 1800 R17 KF4 IGBT FZ 1800 KF6C FZ 800 R 12 KF6 IGBT FZ 1200 IGBT FZ 1000 FZ 1800 R 17 KF4 FD 1200 igbt F4 400 R 12 KF4 IGBT FF 300 R 12 KF2

    eupec FZ 800 r 12 kf1

    Abstract: transistor GR 3200 GE DIODE 0270
    Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 33 KF1 61,5 18 M8 130 31,5 114 C C E E 4,0 tief E C G 2,5 tief M4 7 28 10,65 48,8 10,35 external connection to be done C C E E C G E external connection to be done VWK, April 1996


    Original     		PDF peak2500 150nF, eupec FZ 800 r 12 kf1 transistor GR 3200 GE DIODE 0270

    6.5kV IGBT

    Abstract: IGBT Power Module siemens ag infineon igbt reliability siemens IGBT 600a eupec igbt 6500v igbt 6.5kv SiC IGBT High Power Modules, PCIM Hongkong Measurement of stray inductance for IGBT IGBT module FZ siemens igbt inverters
    Text: 6.5kV IGBT-Modules Franz Auerbach Infineon Technologies Josef Georg Bauer (Siemens AG) Manfred Glantschnig (Infineon Technologies) Jürgen Göttert (eupec GmbH & Co KG) Martin Hierholzer (eupec GmbH & Co KG) Alfred Porst (Infineon Technologies) Daniel Reznik (Siemens AG)


    Original     		PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    FS150R12KF4

    Abstract: IGBT module FZ 1200 FF 400 R 14 FS200R12KF4 400R12K DIODE e2l IGBT module FZ 1200 R17kf4 igbt F4 400 R 12 KF4 IGBT FZ 800R12kF4 FZ 51
    Text: IGBT High-Power Module Type Range status o f sam ple availability 4 □ production • prototype. + ENG sam ples. BMOaai? 00Q25G4 fill # 1 . Q '9 8 O 2. Q '98 IGBT High Power Modules T ype Dual modules FF200R 33KF1 FF 400 R 12 KF4 FF 400 R 16 KF4 FF 400 R 1 7 K F 4


    OCR Scan     		PDF 140x73mm 140x130 140x190 3M03HT 00G2S07 FS150R12KF4 IGBT module FZ 1200 FF 400 R 14 FS200R12KF4 400R12K DIODE e2l IGBT module FZ 1200 R17kf4 igbt F4 400 R 12 KF4 IGBT FZ 800R12kF4 FZ 51

    IGBT FZ 1200

    Abstract: IGBT module FZ 1200 IGBT FZ 800 R16KF4 IGBT FZ 1200 kf1 IGBT FZ 1800 igbt F4 400 R 12 KF4 IGBT FZ 1200 R 33 KF1 IGBT FZ 600 IGBT module FZ 400
    Text: IGBT High-Power Module Type Range status o f sam ple availability 1 □ p r o d u c t io n • ■ prototype. + ENG sam ples. 34032*17 0 0 0 2 5 0 4 fill I This Material Copyrighted By Its Respective Manufacturer # 1 . Q '9 8 Q 2. Q '98 ♦ ♦ Dual modules


    OCR Scan     		PDF 140x73mm 140x190 000220b 00D2207 IGBT FZ 1200 IGBT module FZ 1200 IGBT FZ 800 R16KF4 IGBT FZ 1200 kf1 IGBT FZ 1800 igbt F4 400 R 12 KF4 IGBT FZ 1200 R 33 KF1 IGBT FZ 600 IGBT module FZ 400

    IGBT FZ 800

    Abstract: IGBT FZ 1200 IGBT FZ 1000 FZ 5.1 FZ 800 R 12 KF6
    Text: V ces V O T ype ICRM VcEsat ton ts tf RthJC Tvj max > IGBT High Power Modules A V MS Tvj=25°C MS TVj=25°C ° c /w °c Tvj=25°C MS Tvj=25°C typ. typ. typ. typ. 0,0570 0,0460 150 150 ; 1H9 0,90 0,25 0,15 ! ÌH2 0,09 0,15 0,15 0,13 0,20 0,20 0,15 0,09 0,15


    OCR Scan     		PDF 16KF4 R17KF4 IGBT FZ 800 IGBT FZ 1200 IGBT FZ 1000 FZ 5.1 FZ 800 R 12 KF6

    IGBT FZ 800

    Abstract: 12KL4C 12KF4 IGBT FZ 1200 R 33 KF1 R12KL4C IGBT FZ 1200 IGBT FZ 1000 0285 007 026 FF R 1200 FZ 800 R 12 KF6
    Text: IGBT High Power Modules Type V ces Ic A V IGBT-Hochleistungsmodule V cE sat V E o n / E o ff R th J C Tvj=25°c mWs °c/w ty p . T „ j= 1 2 5 ° C per ty p . a rm o u t lin e Type V cE S Ic A V * VcEsat V E o n / E o ff R fh J C T„j=25°C mWs °c/w ty p .


    OCR Scan     		PDF FF400R 12KF4 12KL4C 16KF4 12KL4C IGBT FZ 800 IGBT FZ 1200 R 33 KF1 R12KL4C IGBT FZ 1200 IGBT FZ 1000 0285 007 026 FF R 1200 FZ 800 R 12 KF6

    IGBT FZ 1200 kf1

    Abstract: 600R16KF4 bs 1600
    Text: IGBT High Power Modules Type V C ES lc I CRM V cE sa t ton ts tf R ,h jc tv , max V A A tp = 1 ms V MS MS °c/w °c tvj=25°C typ. |js tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. o u tlin e p e r a rm D ual m o d u le s ▼ FF 400 R 12 KF4 1200 400 800 2,7


    OCR Scan     		PDF 600R16KF4 00021SS IGBT FZ 1200 kf1 bs 1600

    IGBT FZ 1200 kf1

    Abstract: 600R12KF4
    Text: IGBT High Power Modules Type V C ES lc I CRM V cE sa t ton ts tf R ,h jc tv , max V A A tp = 1 ms V MS MS °c/w °c tvj=25°C typ. |js tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. o u tlin e p e r a rm D ual m o d u le s ▼ FF 400 R 12 KF4 1200 400 800 2,7


    OCR Scan     		PDF 600R16KF4 00021SS IGBT FZ 1200 kf1 600R12KF4