IGBT K30N60HS Search Results

IGBT K30N60HS Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT30J110SRA		Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
TLP5702H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

IGBT K30N60HS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K30N60HS Abstract: K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS SKW30N60HS Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	SKW30N60HS PG-TO-247-3-1 Q67040sS4503 PG-TO-247-3-1 O-247AC) SKW30N60HS K30N60HS K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS	PDF
k30N60hs Abstract: K30N60HS IGBT K30N60 SKW30N60HS equivalent of K30N60HS IGBT K30N60HS IGBT SKW30N60HS PG-TO-247-3 350nS K30N60- Text: SKW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	SKW30N60HS PG-TO-247-3 K30N60HS k30N60hs K30N60HS IGBT K30N60 SKW30N60HS equivalent of K30N60HS IGBT K30N60HS IGBT SKW30N60HS PG-TO-247-3 350nS K30N60-	PDF
K30N60HS Abstract: k30n60 K30N60HS IGBT IGBT K30N60HS equivalent of K30N60HS SKW30N60HS Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	SKW30N60HS PG-TO-247-3-21 SKW30N60HS K30N60HS k30n60 K30N60HS IGBT IGBT K30N60HS equivalent of K30N60HS	PDF
K30N60HS Abstract: equivalent of K30N60HS k30n60 K30N60HS IGBT SKW30N60HS Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	SKW30N60HS PG-TO-247-3-21 SKW30N60HS K30N60HS equivalent of K30N60HS k30n60 K30N60HS IGBT	PDF