K30N60 Search Results

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IXYS Corporation IXSK30N60BD1 IGBT 600V 55A 200W TO264
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DigiKey	IXSK30N60BD1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXSK30N60CD1 IGBT 600V 55A 200W TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSK30N60CD1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG K30N60 Electronic Component
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ComSIT USA	K30N60		270			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K30N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K30N60 Abstract: PDF K30N60 igbt 30A SKW30N60 PG-TO-247-3 1000NC K30N60- Text: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	SKW30N60 K30N60 PDF K30N60 igbt 30A SKW30N60 PG-TO-247-3 1000NC K30N60-	PDF
K30N60 Abstract: No abstract text available Text: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	SKW30N60 SKW30N60 K30N60	PDF
K30N60 Abstract: IGBT K30N60 Text: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	SKW30N60 SKW30N60 K30N60 IGBT K30N60	PDF
K30N60 Abstract: No abstract text available Text: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	SKW30N60 SKW30N60 726-SKW30N60 K30N60	PDF
k30N60 Abstract: No abstract text available Text: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for: - Motor controls	Original	SKW30N60 k30N60	PDF
K30N60HS Abstract: K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS SKW30N60HS Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	SKW30N60HS PG-TO-247-3-1 Q67040sS4503 PG-TO-247-3-1 O-247AC) SKW30N60HS K30N60HS K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS	PDF
k30N60hs Abstract: K30N60HS IGBT K30N60 SKW30N60HS equivalent of K30N60HS IGBT K30N60HS IGBT SKW30N60HS PG-TO-247-3 350nS K30N60- Text: SKW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	SKW30N60HS PG-TO-247-3 K30N60HS k30N60hs K30N60HS IGBT K30N60 SKW30N60HS equivalent of K30N60HS IGBT K30N60HS IGBT SKW30N60HS PG-TO-247-3 350nS K30N60-	PDF
K30N60 Abstract: IGBT K30N60 0N 208 6V 8A US20A K30N60- Text: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	SKW30N60 SKW30N60 K30N60 IGBT K30N60 0N 208 6V 8A US20A K30N60-	PDF
K30N60HS Abstract: k30n60 K30N60HS IGBT IGBT K30N60HS equivalent of K30N60HS SKW30N60HS Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	SKW30N60HS PG-TO-247-3-21 SKW30N60HS K30N60HS k30n60 K30N60HS IGBT IGBT K30N60HS equivalent of K30N60HS	PDF
K30N60HS Abstract: equivalent of K30N60HS k30n60 K30N60HS IGBT SKW30N60HS Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	SKW30N60HS PG-TO-247-3-21 SKW30N60HS K30N60HS equivalent of K30N60HS k30n60 K30N60HS IGBT	PDF