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    IGBT SIMULATION Search Results

    IGBT SIMULATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT SIMULATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HEP230

    Abstract: 2MBI600UE-060 7MBR50UA060 6mbi60 7MBR75UB060 2MBI300UB-060 7MBR30UA060 2MBI400UB-060 fuji transistor modules fuji bipolar transistor
    Text: T-series and U-series IGBT Modules 600 V Seiji Momota Syuuji Miyashita Hiroki Wakimoto 110 2. T-series IGBT Modules 2.1 Features and challenges of T-series IGBT modules The cell structure of an NPT-type IGBT and the unit cell of PT (punch-through)-type device are shown


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    bsm 25 gd 1200 n2

    Abstract: bsm 75 gd 120 n2 siemens mosfet BSM 50 siemens igbt bsm 50 gd 120 n2 Thyristor Tabelle BSM15GD BSM15GD120DN 250068 BSM15GD120DN2
    Text: Technische Angaben Technical Information 1 Übersicht IGBT-Module 1 Overview IGBT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V, 1200 V und 1700 V und im Strombereich


    Original     		PDF

    SINGLE CHIP INVERTER WITH INTEGRATED IGBT

    Abstract: igbt eupec eupec igbt Eupec Power Semiconductors IGBT power igbt converter for 690 v dc to dc converter igbt igbt driver eupec igbt driver GROUND CONTACT MONITORING CIRCUIT
    Text: IGBT Stacks Modular PowerSTACK + A Flexible System for Power Solutions §Modular IGBT Stack System §Voltage Range up to 690 V AC §Current Range up to 1800 AAC eupec Marketing November 2001 page1 §Interfaces and Thermal Management Included IGBT Stacks


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    shockley diode

    Abstract: shockley diode application diode shockley shockley shockley diode datasheet inverter circuits explained IGBT inverter calculation mosfet triggering circuit for inverter Semiconductor Group igbt shockley diode high voltage and high current
    Text: The Reverse Behavior of the NPT-IGBT in its On-State 1 Reverse States of the IGBT in Inverter Circuits Causes for Reverse States The use of the IGBT in inverter circuits does not come without its problems. During the switching cycle the signs of current and voltage applied to the switching device change


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MKI 80-06T6K IGBT Modules H-Bridge IC25 = 89 A VCES = 600 V VCE sat typ. = 1.8 V Trench IGBT Preliminary data Part name (Marking on product) MKI 80-06T6K 10/17/18/23 15 21 16 22 8 11/12 19/20 7 5 1 6 2 3/4/9/24 Features: Application: Package: • Trench IGBT technology


    Original     		PDF 80-06T6K 20120410c

    Untitled

    Abstract: No abstract text available
    Text: MKI 80-06T6K IC25 = 89 A VCES = 600 V VCE sat typ. = 1.8 V IGBT Modules H-Bridge Trench IGBT Preliminary data Part name (Marking on product) MKI 80-06T6K 10/17/18/23 15 21 16 22 8 11/12 19/20 7 5 1 6 2 3/4/9/24 Features: Application: Package: • Trench IGBT technology


    Original     		PDF 80-06T6K 20120410c

    Untitled

    Abstract: No abstract text available
    Text: MKI 80-06T6K IGBT Modules H-Bridge IC25 = 89 A VCES = 600 V VCE sat typ. = 1.8 V Trench IGBT Preliminary data Part name (Marking on product) MKI 80-06T6K 10/17/18/23 15 21 16 22 8 11/12 E72873 19/20 7 5 1 6 2 3/4/9/24 Features: Application: Package: • Trench IGBT technology


    Original     		PDF 80-06T6K E72873 20111110b 80-06T6K MKI80-06T6K

    D711N

    Abstract: D1481N D2601N D3001N D471N Dioden eupec igbt 150kV thyristor gct thyristor
    Text: MARKETING NEWS European PowerSemiconductor and Electronics Company Dioden zu IGBT- und GCT-Umrichtern 1. Anwendungen Moderne Frequenzumrichter hoher Leistungen > ca. 1 MW werden in zunehmenden Maße mit IGBT- oder GCT- (Gate Controlled Thyristor) Bauelementen realisiert.


    Original     		PDF 12bzw. 24-pulsige MN2000-04d D711N D1481N D2601N D3001N D471N Dioden eupec igbt 150kV thyristor gct thyristor

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original     		PDF AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c

    D1331SH45T

    Abstract: D1131SH65T D931SH65T D1481N D2601N D3001N D471N D711N 150kV thyristor d471
    Text: MARKETING NEWS European PowerSemiconductor and Electronics Company Dioden zu IGBT- und GCT-Umrichtern 1. Anwendungen Moderne Frequenzumrichter hoher Leistungen > ca. 1 MW werden in zunehmenden Maße mit IGBT- oder GCT- (Gate Controlled Thyristor) Bauelementen realisiert.


    Original     		PDF 12bzw. 24-pulsige MN2000-04d D1331SH45T D1131SH65T D931SH65T D1481N D2601N D3001N D471N D711N 150kV thyristor d471

    Untitled

    Abstract: No abstract text available
    Text: IXA55I1200HJ preliminary XPT IGBT VCES = 1200 V I C25 = 84 A VCE sat = 1.8 V Single IGBT Part number IXA55I1200HJ Backside: isolated (C) 2 (G) 1 (E) 3 Features / Advantages: Applications: Package: ISOPLUS247 ● Easy paralleling due to the positive temperature


    Original     		PDF IXA55I1200HJ ISOPLUS247 60747and

    TRANSISTOR 9642

    Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		PDF T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		PDF T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT

    230 AC to 5V dc smps

    Abstract: IRFP460 SWITCHING FREQUENCY IRFP460 equivalent smps 450W irfp460 mosfet SCHEMATIC POWER SUPPLY WITH IGBTS IRFP460 full bridge make full-bridge SMPS dale RH-50 8508 zener
    Text: SMPS IGBT Outperforms MOSFETs in Various SMPS Applications TM Application Note August 2000 AN9884 Authors: Alexander H. Craig and Sampat Shekhawat of the IGBT. The super junction transistor device failed during the reverse recovery of its body diode. To slow down


    Original     		PDF AN9884 200ns 230 AC to 5V dc smps IRFP460 SWITCHING FREQUENCY IRFP460 equivalent smps 450W irfp460 mosfet SCHEMATIC POWER SUPPLY WITH IGBTS IRFP460 full bridge make full-bridge SMPS dale RH-50 8508 zener

    smps 450W

    Abstract: IRFP460 full bridge dc-dc converter with irfp460 8508 zener IRFP460 application dale RH-50 full bridge mosfet smps IRFP460 equivalent SCHEMATIC POWER SUPPLY WITH IGBTS schematic SMPS 12V
    Text: SMPS IGBT Outperforms MOSFETs in Various SMPS Applications TM Application Note September 2000 AN9884.1 Authors: Alexander H. Craig and Sampat Shekhawat of the IGBT. The super junction transistor device failed during the reverse recovery of its body diode. To slow down


    Original     		PDF AN9884 200ns smps 450W IRFP460 full bridge dc-dc converter with irfp460 8508 zener IRFP460 application dale RH-50 full bridge mosfet smps IRFP460 equivalent SCHEMATIC POWER SUPPLY WITH IGBTS schematic SMPS 12V

    TSV944

    Abstract: smd transistor w16 UM0969 STGIPS10K60A ntc 10 epcos RC06 series W12 hall sensor W16 SMD transistor stm32 encoder VIPer16 applications
    Text: UM0969 User manual 3-phase motor control demonstration board featuring IGBT intelligent power module STGIPS10K60A Introduction This document describes the 1 kW 3-phase motor control demonstration board, featuring the STGIPS10K60A: 600 V - 10 A IGBT Intelligent power module. The demonstration board


    Original     		PDF UM0969 STGIPS10K60A STGIPS10K60A: 25L-SDIP 25-lead, STGIPS10K60A. STEVAL-IHM027V1 TSV944 smd transistor w16 UM0969 STGIPS10K60A ntc 10 epcos RC06 series W12 hall sensor W16 SMD transistor stm32 encoder VIPer16 applications

    single phase inverters circuit diagram

    Abstract: single phase dual output inverter with three switch legs solar inverters circuit diagram 1ED020I12-S inverter circuit using driver ic 2ED020I12-FI heatsink water FF1000R17IE4 LQ66 2ED020I12-FI ALCAN IGBt driver 2ed020I12-FI
    Text: Benefits of System-oriented IGBT Module Design for High Power Inverters LUNIEWSKI Piotr Benefits of System-oriented IGBT Module Design for High Power Inverters Piotr Luniewski, Uwe Jansen INFINEON TECHNOLOGIES AG Max-Planck-Str. 5 Warstein, Germany Tel.: +2902 / 764 – 2306


    Original     		PDF AN2004-06, single phase inverters circuit diagram single phase dual output inverter with three switch legs solar inverters circuit diagram 1ED020I12-S inverter circuit using driver ic 2ED020I12-FI heatsink water FF1000R17IE4 LQ66 2ED020I12-FI ALCAN IGBt driver 2ed020I12-FI

    CM75YE13-12F

    Abstract: 3 phase inverter controller ic Three phase inverter IGBT pin configuration single phase IGBT based PWM inverters igbt based high frequency inverter SiC IGBT High Power Modules inverter circuit using IGBT module IGBT inverter calculation 3 level inverter three level inverter
    Text: IGBT Modules Optimized for Three Level Inverters Eric R. Motto John F. Donlon Senior Member Senior Member Powerex Incorporated 173 Pavilion Lane Youngwood, PA 15697 USA Abstract - This paper will present optimized IGBT module packaging for three level inverters. Modules with nominal


    Original     		PDF CM75YE13-12F 3 phase inverter controller ic Three phase inverter IGBT pin configuration single phase IGBT based PWM inverters igbt based high frequency inverter SiC IGBT High Power Modules inverter circuit using IGBT module IGBT inverter calculation 3 level inverter three level inverter

    Untitled

    Abstract: No abstract text available
    Text: IXA70I1200NA XPT IGBT VCES = 1200 V I C25 = 100 A VCE sat = 1.8 V Single IGBT Part number IXA70I1200NA Backside: collector (C) 3 (G) 2 (E) 1+4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Easy paralleling due to the positive temperature


    Original     		PDF IXA70I1200NA OT-227B 60747and 20131024c

    Untitled

    Abstract: No abstract text available
    Text: IXA20I1200PB preliminary XPT IGBT VCES = 1200 V I C25 = 38 A VCE sat = 1.8 V Single IGBT Part number IXA20I1200PB Backside: collector (C) 2 (G) 1 (E) 3 Features / Advantages: Applications: Package: TO-220 ● Easy paralleling due to the positive temperature


    Original     		PDF IXA20I1200PB O-220 60747and 20131024a

    Untitled

    Abstract: No abstract text available
    Text: IXA70I1200NA XPT IGBT VCES = 1200 V I C25 = 100 A VCE sat = 1.8 V Single IGBT Part number IXA70I1200NA Backside: isolated (C) 3 (G) 2 (E) 1+4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Easy paralleling due to the positive temperature


    Original     		PDF IXA70I1200NA OT-227B 60747and 20140708c

    smd transistor w16

    Abstract: w13 smd transistor transistor smd w16 W12 hall sensor Transistor hall w12 manual STM32 touch sensing GIPS10K60 smd w16 transistor w12 smd transistor diode 1N4148 SMD PACKAGE DIMENSION
    Text: UM0969 User manual 3-phase motor control demonstration board featuring IGBT intelligent power module STGIPS10K60A Introduction This document describes the 1 kW 3-phase motor control demonstration board, featuring the STGIPS10K60A: 600 V - 10 A IGBT Intelligent power module. The demonstration board


    Original     		PDF UM0969 STGIPS10K60A STGIPS10K60A: 25L-SDIP 25-lead, STGIPS10K60A. STEVAL-IHM027V1 smd transistor w16 w13 smd transistor transistor smd w16 W12 hall sensor Transistor hall w12 manual STM32 touch sensing GIPS10K60 smd w16 transistor w12 smd transistor diode 1N4148 SMD PACKAGE DIMENSION

    Untitled

    Abstract: No abstract text available
    Text: IXA220I650NA tentative XPT IGBT VCES = 650 V I C25 = 255 A VCE sat = 1.6 V Single IGBT Part number IXA220I650NA Backside: isolated (C) 3 (G) 2 (E) 1+4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Easy paralleling due to the positive temperature


    Original     		PDF IXA220I650NA OT-227B 60747and

    BT diode

    Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
    Text: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,


    OCR Scan     		PDF