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    IGBT TUBE Search Results

    IGBT TUBE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT TUBE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGBT

    Abstract: IC FOR FLASHER MITSUBISHI IGBT 8f diode CY20AAJ-8F mitsubishi SOP
    Text: MITSUBISHI IGBT MITSUBISHI IGBT CY20AAJ-8F CY20AAJ-8F IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY20AAJ-8F OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ➃ ● VCES . 400V


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    PDF CY20AAJ-8F IGBT IC FOR FLASHER MITSUBISHI IGBT 8f diode CY20AAJ-8F mitsubishi SOP

    IGBT Guide

    Abstract: KA3160 IGBT gate drivers igbt KA3161 DIP8
    Text: Analog and Mixed Signal Products CD-ROM Selection Guide IGBT Gate Drivers Product Description Package Packing Code1 Suffix KA3160 IGBT gate driver with protection DIP-8 T KA3161 IGBT gate driver with protection DIP-8 T KA3162 IGBT gate driver with protection


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    PDF KA3160 KA3161 KA3162 IGBT Guide IGBT gate drivers igbt DIP8

    strobe IGBT

    Abstract: CY25AAJ-8
    Text: MITSUBISHI IGBT MITSUBISHI IGBT CY25AAJ-8 CY25AAJ-8 IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY25AAJ-8 OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ➃ ● VCES . 400V


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    PDF CY25AAJ-8 strobe IGBT CY25AAJ-8

    igbt CY25AAJ-8F

    Abstract: IC for electronic flasher strobe trigger strobe IGBT 8f diode IGBT application notes CY25AAJ-8F IC FOR FLASHER
    Text: MITSUBISHI IGBT MITSUBISHI IGBT CY25AAJ-8F CY25AAJ-8F IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY25AAJ-8F OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ➃ ● VCES . 400V


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    PDF CY25AAJ-8F igbt CY25AAJ-8F IC for electronic flasher strobe trigger strobe IGBT 8f diode IGBT application notes CY25AAJ-8F IC FOR FLASHER

    CY20AAJ-8

    Abstract: strobe IGBT
    Text: MITSUBISHI IGBT MITSUBISHI IGBT CY20AAJ-8 CY20AAJ-8 IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY20AAJ-8 OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ➃ ● VCES . 400V


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    PDF CY20AAJ-8 CY20AAJ-8 strobe IGBT

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UA8316 Preliminary LINEAR INTEGRATED CIRCUIT IGBT GATE DRIVER „ DESCRIPTION Integrating IGBT gate drive circuits on a single chip, The UTC UA8316 is a dedicated IC and a high current can directly drive IGBT. „ FEATURES * A high current can directly drive IGBT


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    PDF UA8316 UA8316 -200mA UA8316L-G07-T UA8316G-G07-T QW-R122-010

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2308A NGTB30N60L2WG N-Channel IGBT 600V, 30A, VCE sat ;1.4V, TO-247-3L with Low VF Switching Diode Features http://onsemi.com Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)  IGBT IC=100A (Tc=25C)  IGBT tf=80ns typ.


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    PDF ENA2308A NGTB30N60L2WG O-247-3L A2308-8/8

    strobe IGBT

    Abstract: IGBT 2000 strobe trigger CY25AAJ-8 MITSUBISHI IGBT
    Text: MITSUBISHI IGBT MITSUBISHI IGBT ARY CY25AAJ-8 CY25AAJ-8 MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY25AAJ-8 OUTLINE DRAWING Dimensions in mm


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    PDF CY25AAJ-8 strobe IGBT IGBT 2000 strobe trigger CY25AAJ-8 MITSUBISHI IGBT

    strobe IGBT

    Abstract: camera flasher CY20AAJ-8 igbt mitsubishi
    Text: MITSUBISHI IGBT MITSUBISHI IGBT ARY CY20AAJ-8 CY20AAJ-8 MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY20AAJ-8 OUTLINE DRAWING Dimensions in mm


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    PDF CY20AAJ-8 strobe IGBT camera flasher CY20AAJ-8 igbt mitsubishi

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


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    PDF DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor

    "IGBT Driver"

    Abstract: igbt driver Diagram igbt flash igbt protection circuit diagram xenon driver -flash circuit diagram for igbt driver igbt flash POWER SUPPLY FOR XENON LAMP MM3456 trigger coil
    Text: MITSUMI Photoflash Charge IC with a built-in IGBT driver MM3456 Photoflash Charge IC with a built-in IGBT driver Monolithic IC MM3456 Outline This IC is a photoflash charge IC with a built-in IGBT driver, which has functions to charge photoflash capacitors and flash xenon tubes of digital still cameras and cell phones.


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    PDF MM3456 "IGBT Driver" igbt driver Diagram igbt flash igbt protection circuit diagram xenon driver -flash circuit diagram for igbt driver igbt flash POWER SUPPLY FOR XENON LAMP MM3456 trigger coil

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE sat ;1.4V http://onsemi.com Features Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications


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    PDF ENA2308B NGTB30N60L2WG A2308-8/8

    KG3B-35-5

    Abstract: WIMA MKP 10 MKT wima wacker general purpose silicone THERMISTOR KG3B Wacker Silicones P-12 igbt 6.5 kv snubber wima 2.2 uF MKP10 WIMA MKP 4 MKP10 0,1
    Text: Mounting Instructions and Application Notes for IGBT modules V1.0 ESD handling instructions SEMiXTM IGBT modules are devices sensitive to electrostatic discharge on the gates. To avoid electrostatic discharge on the gate which could destroy the IGBT-MOS gate, the module is


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    PDF /5/FO/000/013/Rev KG3B-35-5 WIMA MKP 10 MKT wima wacker general purpose silicone THERMISTOR KG3B Wacker Silicones P-12 igbt 6.5 kv snubber wima 2.2 uF MKP10 WIMA MKP 4 MKP10 0,1

    Tag 225-600

    Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


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    PDF DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes

    DCR2950W

    Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


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    PDF DS5766-4. DCR2950W igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor

    TTRN-3825H

    Abstract: No abstract text available
    Text: Datasheet AS3635 Xenon Flash Driver with 5V IGBT Control 1 General Description 2 Key Features Build in 5V charge-pump for IGBT gate drive The AS3635 is a highly integrated photoflash charger with build in IGBT driver. Photoflash voltage accuracy programmable to ±3%


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    PDF AS3635 AS3635 320mA com/AS3635 TTRN-3825H

    QP12W05S-37

    Abstract: DC/DC Converter Mornsun mornsun-power
    Text: QP12W05S-37 Hybrid Integrated IGBT Driver QP12W05S-37 is a hybrid integrated IGBT driver designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated DC-to-DC


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    PDF QP12W05S-37 QP12W05S-37 30kV/Â 15kV/Â 150ohm 150ohm QP12W 05S-37 B/0-2012 DC/DC Converter Mornsun mornsun-power

    QP12W05S-37A

    Abstract: DC/DC Converter Mornsun mornsun-power
    Text: QP12W05S-37A Hybrid Integrated IGBT Driver QP12W05S-37A is a hybrid integrated IGBT driver designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated DC-to-DC


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    PDF QP12W05S-37A QP12W05S-37A 30kV/Â 15kV/Â 150ohm 150ohm DC/DC Converter Mornsun mornsun-power

    4kv flash trigger coil 4 pin

    Abstract: toshiba datecode GRM155R61A105 TTRN-3825H marking code onsemi Z Diode LDT4520T-01 GT8G133 TTRN-3825 TIG058E8 TTRN-3822
    Text: Datasheet AS3635 Xenon Flash Driver with 5V IGBT Control 1 General Description 2 Key Features Build in 5V charge-pump for IGBT gate drive The AS3635 is a highly integrated photoflash charger with build in IGBT driver. Photoflash voltage accuracy programmable to ±3%


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    PDF AS3635 AS3635 320mA com/AS3635 4kv flash trigger coil 4 pin toshiba datecode GRM155R61A105 TTRN-3825H marking code onsemi Z Diode LDT4520T-01 GT8G133 TTRN-3825 TIG058E8 TTRN-3822

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


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    PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2202 NGTG20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V Single TO-3PF-3L Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Enhansment type • Adaption of full isolation type package


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    PDF ENA2202 NGTG20N60L2TF1G A2202-7/7

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2308 NGTB30N60L2WG Advance Information http://onsemi.com N-Channel IGBT 600V, 100A, VCE sat ;1.4V TO-247-3L with Low VF Switching Diode Electrical Connection C(2) Features • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT tf=80ns typ.


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    PDF A2308 NGTB30N60L2WG O-247-3L 340AM A2308-8/8

    pin diagram of ic 4440

    Abstract: 4440 ic wiring diagram SDIP-25L thermistor table STGIPS10K60A 3-phase 400 hz inverters circuit diagram single phase to 3 phase inverter AC GIPS10K60
    Text: STGIPS10K60A SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 10 A, 600 V short-circuit rugged IGBT Features • IPM 10 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ Short-circuit rugged IGBT


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    PDF STGIPS10K60A SDIP-25L pin diagram of ic 4440 4440 ic wiring diagram SDIP-25L thermistor table STGIPS10K60A 3-phase 400 hz inverters circuit diagram single phase to 3 phase inverter AC GIPS10K60

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2283A NGTB10N60FG N-Channel IGBT http://onsemi.com 600V, 10A, VCE sat ;1.5V, TO-220F-3FS Features • IGBT VCE (sat)=1.5V typ. (IC=10A, VGE=15V) • IGBT IC=20A (Tc=25°C) • Adaption of full isolation type package • 5 s short circuit capability


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    PDF ENA2283A NGTB10N60FG O-220F-3FS A2283-6/6