bc556 equivalent
Abstract: K2223
Text: Features • • • • • • • • • • • • • • • • • • • • • • • • DC Characteristic Adjustable Transmit and Receive Gain Adjustable Symmetrical Input of Microphone Amplifier Anti-clipping in Transmit Direction Automatic Line-loss Compensation
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4741B
bc556 equivalent
K2223
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loud speaker
Abstract: BC177 NPN transistor datasheet BC177 SDIP30 U4089B U4089B-M U4089B-MFN U4089B-MFNG3 U4089B-MSD SSO44
Text: U4089B-M Monolithic Integrated Feature Phone Circuit Description The telephone circuit U4089B-M is a linear integrated circuit for use in feature phones, answering machines and fax machines. It contains the speech circuit, sidetone equivalent and ear protection rectifiers. The circuit is
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U4089B-M
U4089B-M
D-74025
06-Mar-01
loud speaker
BC177 NPN transistor datasheet
BC177
SDIP30
U4089B
U4089B-MFN
U4089B-MFNG3
U4089B-MSD
SSO44
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GAL-5
Abstract: No abstract text available
Text: PBL 4032001 05 January PBL 403 05 Multiband GSM Power Amplifier Description. Key features. The PBL 403 05 is a dual line-up GaAs MMIC power amplifier intended for use in multiband GSM terminals. Powered of a 3.2V supply it delivers more than 34.5 dBm output power at GSM900 and more than 31.5 dBm output power at DCS1800 or
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GSM900
DCS1800
PCS1900
QSOP28
GSM900,
1522-PBL
S-164
GAL-5
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Untitled
Abstract: No abstract text available
Text: VND670SP Dual high-side switch with dual Power MOSFET gate driver bridge configuration Features Type RDS(on) IOUT VCC VND670SP 30mΩ(1) 15A(1) 40V ) s ( ct 10 1. Per each channel. 1 u d o PowerSO-10 • 5V logic level compatible inputs ■ Gate drive for two external power MOSFET
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VND670SP
PowerSO-10
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8059 microcontroller
Abstract: 7905 voltage regulator diode.18 7905 regulator 7905 voltage regulator datasheet ST 7905 Datasheet and application notes TEMIC U4090B Transistor BC177 BC177 BC556
Text: U4090B Monolithic Integrated Feature Phone Circuit Description The µc-controlled telephone circuit U4090B is a linear integrated circuit for use in feature phones, answering machines and fax machines. It contains the speech circuit, tone ringer interface with DC/DC converter, sidetone
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U4090B
U4090B
D-74025
07-Apr-98
8059 microcontroller
7905 voltage regulator
diode.18
7905 regulator
7905 voltage regulator datasheet
ST 7905 Datasheet and application notes
TEMIC U4090B
Transistor BC177
BC177
BC556
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piezo speaker datasheet
Abstract: bc556 equivalent 7905 voltage regulator 7905 regulator BC177 BC556 SD103A U4090B U4090B-NFN U4090B-NFNG3
Text: U4090B Monolithic Integrated Feature Phone Circuit Description The µc-controlled telephone circuit U4090B is a linear integrated circuit for use in feature phones, answering machines and fax machines. It contains the speech circuit, tone ringer interface with DC/DC converter, sidetone
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U4090B
U4090B
D-74025
07-Mar-01
piezo speaker datasheet
bc556 equivalent
7905 voltage regulator
7905 regulator
BC177
BC556
SD103A
U4090B-NFN
U4090B-NFNG3
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20KHZ
Abstract: AN515 VND670SP
Text: VND670SP DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION TYPE VND670SP • RDS(on) 30 mΩ IOUT 15 A VDSS 40 V OUTPUT CURRENT:15A PER CHANNEL 5V LOGIC LEVEL COMPATIBLE INPUTS GATE DRIVE FOR TWO EXTERNAL POWER MOS ■ UNDERVOLTAGE AND OVERVOLTAGE
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VND670SP
PowerSO-10TM
20KHZ
AN515
VND670SP
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TEMIC U4089B
Abstract: SPEECH NETWORK WITH DIALER INTERFACE BC177 SDIP28 SDIP30 U4089B TELEFUNKEN* amplifier
Text: U4089B Monolithic Integrated Feature Phone Circuit Description The telephone circuit U4089B is a linear integrated circuit for use in feature phones, answering machines and fax machines. It contains the speech circuit, sidetone equivalent and ear protection rectifiers. The circuit is
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U4089B
U4089B
D-74025
20-Jan-97
TEMIC U4089B
SPEECH NETWORK WITH DIALER INTERFACE
BC177
SDIP28
SDIP30
TELEFUNKEN* amplifier
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3A, 50V BRIDGE
Abstract: VN67 VN670SP
Text: VND670SP DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION TYPE VND670SP • RDS(on) 30 mΩ IOUT 15 A VDSS 40 V OUTPUT CURRENT:15A PER CHANNEL 5V LOGIC LEVEL COMPATIBLE INPUTS GATE DRIVE FOR TWO EXTERNAL POWER MOS ■ UNDERVOLTAGE AND OVERVOLTAGE
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VND670SP
VND670SP
PowerSO-10TM
3A, 50V BRIDGE
VN67
VN670SP
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open load detection in MOSFET half bridges
Abstract: AN515 VN670SP VND670SP VND670SP13TR VN67
Text: VND670SP Dual high-side switch with dual Power MOSFET gate driver bridge configuration Features Type RDS(on) IOUT VCC VND670SP 30mΩ(1) 15A(1) 40V 10 1. Per each channel. 1 PowerSO-10 • 5V logic level compatible inputs ■ Gate drive for two external power MOSFET
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VND670SP
PowerSO-10
VND670SP
open load detection in MOSFET half bridges
AN515
VN670SP
VND670SP13TR
VN67
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PDF
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VND670SP
Abstract: Thermal Shut Down Functioned MOSFET 20KHZ AN515
Text: VND670SP DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION TYPE VND670SP • RDS(on) 30 mΩ IOUT 15 A VDSS 40 V OUTPUT CURRENT:15A PER CHANNEL 5V LOGIC LEVEL COMPATIBLE INPUTS GATE DRIVE FOR TWO EXTERNAL POWER MOS ■ UNDERVOLTAGE AND OVERVOLTAGE
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VND670SP
PowerSO-10TM
VND670SP
Thermal Shut Down Functioned MOSFET
20KHZ
AN515
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GT atten
Abstract: 100U A115A BC177 U4089B-P U4089B-PFNG3Y U4089B-PFNY 4518C
Text: Features • • • • • • • • • • • • • • • • Adjustable DC Characteristic Transmit and Receive Gain Adjustable Symmetrical Input of Microphone Amplifier Anti-clipping in Transmit Direction Automatic Line-loss Compensation Built-in Ear Protection
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10-mA
4518C
GT atten
100U
A115A
BC177
U4089B-P
U4089B-PFNG3Y
U4089B-PFNY
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nf734
Abstract: KW C2L5L1.TE-6P5Q-EBVF46FCBB46-0-VL KW C3L5L1.TE-6Q5R-EBVF46FCBB46-0-VL BC177 BC556 SD103A U4092B U4092B-SD RGT240 KW C2L5L1.TE-7P5Q-EBXD46EBZB46-0-VL
Text: U4092B TELEFUNKEN Semiconductors Monolithic Integrated Feature Phone Circuit Description The µc controlled telephone circuit U4092B is a linear integrated circuit for use in feature phones, answering machines and fax machines. It contains the speech circuit,
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U4092B
U4092B
88/540/EEC
91/690/EEC
nf734
KW C2L5L1.TE-6P5Q-EBVF46FCBB46-0-VL
KW C3L5L1.TE-6Q5R-EBVF46FCBB46-0-VL
BC177
BC556
SD103A
U4092B-SD
RGT240
KW C2L5L1.TE-7P5Q-EBXD46EBZB46-0-VL
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E » 7=^4142 DQIOTST G ÊSSMGK P R ELIM INA R Y “ BiCMOS SRAM KM68B257 3 2 K X 8 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Time —Commercial: 10ns, 12ns, 15ns —6ns Output Enable time • Low Power Dissipation
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KM68B257
195mA,
175mA,
150mA
28-pin
28-pln
KM68B257
144-bit
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Untitled
Abstract: No abstract text available
Text: KSV3208 LINEAR INTEGRATED CIRCUITS HIGH-SPEED A/D CONVERTER The S am sung KSV3208, VLSI c irc u it in Cl C o lle cto r Im planted technology, c o n s is ts o f a high-speed flash-type 8-bit A/D converter. Also, th e various a u xilia ry c irc u its such as reference volta ge sou rces, pre
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KSV3208
KSV3208,
KSV3208
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transistor BUT
Abstract: 11apx transistor Transistor Vb TRANSISTOR K 135 J 50 silicon transistor npn 395 bsat
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
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BUT11APX
11APX
transistor BUT
11apx transistor
Transistor Vb
TRANSISTOR K 135 J 50
silicon transistor npn 395
bsat
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC M2E J> H T^mMS Q O l Q ^ b fi HS tlC K - KM69B257 p R E U M iN A R Y BiCMOS SRAM 3 2 K X 9 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Times —Commercial: 10ns, 12ns, 15ns, 20ns —5ns & 6ns Output Enable times
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KM69B257
195mA,
175mA,
155mA,
130mA
32-pin
KM69B257
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS MASK ROM KM23C16100FP 16M-Bit 2M X 8/1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access: 150ns (max.) Page access: 70ns (max.)
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KM23C16100FP
16M-Bit
150ns
100mA
64-pin
KM23C16100FP
KM23C16100FP)
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULES KMM5401000A/AG 1 M X 4 0 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 5401000A is a 1M bits X 40 Dynamic RAM high density memory module. The Sam sung K M M 5401000A consist of ten CMOS 1M X 4
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KMM5401000A/AG
401000A
20-pin
72-pin
401000A-
401000A-1
180ns
KMM5401OOOA
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PDF
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nec A2C
Abstract: 8160l1
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /iPD42S18160L, 4218160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and
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uPD42S18160L
uPD4218160L
16-BIT,
/iPD42S18160L,
4218160L
PD42S18160L
50-pin
42-pin
PD42S18160L-A60,
4218160L-A60
nec A2C
8160l1
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IGO tv circuit diagram
Abstract: 412hs
Text: FINAL COM'L: -7/10/12/15 IND: -10/12/14/18 MACH 4-64/MACH4LV-64 BEYON D PER FO R M A N C E High-Performance EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ 44 pins in PLCC, 44 and 48 pins in TQFP 64 macroceils 7.5 ns tpQ Commercial, 10 ns tpD Industrial
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4-64/MACH4LV-64
-038-PCfM
MACH4-64/32-7/10/12/15
MACH4LV-64/32-7/10/12/15
IGO tv circuit diagram
412hs
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Untitled
Abstract: No abstract text available
Text: FINAL BEYOND PERFOR M A N CE COM’L: -7/10/12/15 I ND:-10/12/14/18 M A C H 4 -2 5 6 /M A C H 4 L V -2 5 6 High-Performance EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 208 pins in PQFP, 256 pins in BGA
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zfcm128
MACH111
16-038-BGD256-1
DT104
MACH4-256/128-10/12/15
MACH4LV-256/128-10/12/15
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY COM'L: -7/10/12/15 IND: -10/12/14/18 MACH 4-192/MACH4LV-192 BEYO N D PERFO RM AN CE High-Performance EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ 144 pins in TQFP 192 macrocells 7.5 ns tPD Commercial, 10 ns tpD Industrial
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4-192/MACH4LV-192
MACH111
MACH4-192/96-7/10/12/15
MACH4LV-192/96-7/10/12/15
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gc 301
Abstract: selen-gleichrichter GAZ17 GY125 GD244 VEB M ik ro e le k tro n ik 04A657 ITT transistoren ga106 selen
Text: Erläuterung der Kurzzeichen von Halbleiterbauelem enten Transistoren B b C 1 15 C 22 b C 1h 2 i ä f h2 1o fT f F 1121 o | Il I2Tj| I E> Im o 11 • i>; o le n s IrKV Io Ic I K Bo In I d l^tot B ung Basisschaltung, Basis E in g an g sk ap azität MOS -FE T )
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